Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature

Indium tin oxide (ITO) thin films were deposited by RF magnetron sputtering on glass substrates employing a sintered ceramic target. The influence of substrate temperature on the structural, compositional, optical and electrical properties of the thin films were investigated by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), spectrophotometer and four-point probes. All the ITO thin films show a polycrystalline indium oxide structure and have a preferred orientation along the (222) direction. The substrate temperature significantly affects the crystal structure and optoelectrical properties of the thin films. With the increment of substrate temperature, the electrical resistivity of the deposited films decreases, the crystallite dimension, optical bandgap and average transmittance in the visible region increase. The ITO thin film deposited at substrate temperature of 200 °C possesses the best synthetic optoelectrical properties, with the highest transmittance, the lowest resistivity and the highest figure of merit.

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Indium Tin Oxide Films Grown at Room Temperature by RF-Magnetron Sputtering in Oxygen-Free Environment

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.200.10 ◽

2013 ◽

Vol 200 ◽

pp. 10-13 ◽

Cited By ~ 3

Author(s):

Dmitry Kudryashov ◽

Alexander Gudovskikh ◽

Kirill Zelentsov

Keyword(s):

Magnetron Sputtering ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Argon Pressure ◽

Sem Images ◽

Sputtering Power ◽

Free Environment ◽

Ito Films

Indium Tin Oxide (ITO) thin films were grown at room temperature (RT) in oxygen-free environment by rf-magnetron sputtering on glass and Si(100)-substrates. The effects of argon pressure, sputtering power and film thickness on the electrical and optical properties of ITO films were investigated. For a 100 nm thick ITO films grown at RT in argon pressure 1.95∙10-3 mbar and sputtering power of 50 W, the transmittance was near 90% at 500 nm and resistivity was 5.4∙10-4 Ohm∙cm. It has been shown that the sputtering power plays an important role in electric properties of ITO films. SEM images of these samples show smooth surface with sharp substrate/ITO interface.

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Structural and Optical Properties of Nickel (Ni)/indium Tin Oxide (ITO) Thin-Films Deposited by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.895.181 ◽

2014 ◽

Vol 895 ◽

pp. 181-185 ◽

Cited By ~ 1

Author(s):

M. Sobri ◽

A. Shuhaimi ◽

M. Mazwan ◽

K.M. Hakim ◽

S. Najwa ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Seed Layer ◽

Rf Magnetron Sputtering ◽

Sample Surface ◽

Deposition Parameter ◽

Ito Thin Films

Nickel (Ni)/ indium tin oxide (ITO) thin-films have been deposited on silicon (Si) and glass substrates using radio-frequency (RF) magnetron sputtering at 200°C temperature. ITO layer was deposited on top of Ni layer with various deposition parameter. The material and optical properties of the ITO samples with and without Ni seed layer were analyzed. X-ray diffraction studies shows that the films are crystalline with the typical ITO diffraction peaks of (222), (400) and (411). The FESEM and AFM images shows that the grains have uniform shapes and sizes. FESEM results reveal that the grain size along the sample surface decreases when the Ni seed layer is added. Both the samples shows higher transmittance of more than 95% in UV-vis spectrometer.

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