Structural and Optical Properties of Nickel (Ni)/indium Tin Oxide (ITO) Thin-Films Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 181-185 ◽  
Author(s):  
M. Sobri ◽  
A. Shuhaimi ◽  
M. Mazwan ◽  
K.M. Hakim ◽  
S. Najwa ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Rf Magnetron Sputtering ◽  
Sample Surface ◽  
Deposition Parameter ◽  
Ito Thin Films

Nickel (Ni)/ indium tin oxide (ITO) thin-films have been deposited on silicon (Si) and glass substrates using radio-frequency (RF) magnetron sputtering at 200°C temperature. ITO layer was deposited on top of Ni layer with various deposition parameter. The material and optical properties of the ITO samples with and without Ni seed layer were analyzed. X-ray diffraction studies shows that the films are crystalline with the typical ITO diffraction peaks of (222), (400) and (411). The FESEM and AFM images shows that the grains have uniform shapes and sizes. FESEM results reveal that the grain size along the sample surface decreases when the Ni seed layer is added. Both the samples shows higher transmittance of more than 95% in UV-vis spectrometer.

Properties of Indium Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Substrate Temperatures

2012 ◽  
Vol 502 ◽  
pp. 77-81
Author(s):  
Z.Y. Zhong ◽  
J.H. Gu ◽  
X. He ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Ito Thin Films

Indium tin oxide (ITO) thin films were deposited by RF magnetron sputtering on glass substrates employing a sintered ceramic target. The influence of substrate temperature on the structural, compositional, optical and electrical properties of the thin films were investigated by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), spectrophotometer and four-point probes. All the ITO thin films show a polycrystalline indium oxide structure and have a preferred orientation along the (222) direction. The substrate temperature significantly affects the crystal structure and optoelectrical properties of the thin films. With the increment of substrate temperature, the electrical resistivity of the deposited films decreases, the crystallite dimension, optical bandgap and average transmittance in the visible region increase. The ITO thin film deposited at substrate temperature of 200 °C possesses the best synthetic optoelectrical properties, with the highest transmittance, the lowest resistivity and the highest figure of merit.

Preparation and characteristics of Nb-doped indium tin oxide thin films by RF magnetron sputtering

2012 ◽  
Vol 8 (6) ◽  
pp. 460-463 ◽  
Author(s):  
Shi-na Li ◽  
Rui-xin Ma ◽  
Liang-wei He ◽  
Yu-qin Xiao ◽  
Jun-gang Hou ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Films

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
High Quantum Efficiency ◽  
Ito Thin Films ◽  
Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

scholarly journals Nanostructural Characterisation and Optical Properties of Sputter-Deposited Thick Indium Tin Oxide (ITO) Coatings

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1127
Author(s):  
Andrius Subacius ◽  
Bill Baloukas ◽  
Etienne Bousser ◽  
Steve J. Hinder ◽  
Mark A. Baker ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nanocrystalline Structure ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Ito Thin Films ◽  
Sputter Deposited ◽  
Thick Coatings

Indium tin oxide (ITO) thin films, used in many optoelectronic applications, are typically grown to a thickness of a maximum of a few hundred nanometres. In this work, the composition, microstructure and optical/electrical properties of thick ITO coatings deposited by radio frequency magnetron sputtering from a ceramic ITO target in an Ar/O2 gas mixture (total O2 flow of 1%) on unheated glass substrates are reported for the first time. In contrast to the commonly observed (200) or (400) preferential orientations in ITO thin films, the approximately 3.3 μm thick coatings display a (622) preferential orientation. The ITO coatings exhibit a purely nanocrystalline structure and show good electrical and optical properties, such as an electrical resistivity of 1.3 × 10−1 Ω·cm, optical transmittance at 550 nm of ~60% and optical band gap of 2.9 eV. The initial results presented here are expected to provide useful information for future studies on the synthesis of high-quality thick ITO coatings.

Crystallization of indium tin oxide thin films prepared by RF-magnetron sputtering without external heating

2005 ◽  
Vol 474 (1-2) ◽  
pp. 127-132 ◽  
Author(s):  
Ju-O Park ◽  
Joon-Hyung Lee ◽  
Jeong-Joo Kim ◽  
Sang-Hee Cho ◽  
Young Ki Cho
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Films ◽  
External Heating
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