Indium Tin Oxide Films Grown at Room Temperature by RF-Magnetron Sputtering in Oxygen-Free Environment
2013 ◽
Vol 200
◽
pp. 10-13
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Keyword(s):
Indium Tin Oxide (ITO) thin films were grown at room temperature (RT) in oxygen-free environment by rf-magnetron sputtering on glass and Si(100)-substrates. The effects of argon pressure, sputtering power and film thickness on the electrical and optical properties of ITO films were investigated. For a 100 nm thick ITO films grown at RT in argon pressure 1.95∙10-3 mbar and sputtering power of 50 W, the transmittance was near 90% at 500 nm and resistivity was 5.4∙10-4 Ohm∙cm. It has been shown that the sputtering power plays an important role in electric properties of ITO films. SEM images of these samples show smooth surface with sharp substrate/ITO interface.
Keyword(s):
2019 ◽
Vol 48
(11)
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pp. 7192-7202
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2006 ◽
Vol 134
(1)
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pp. 68-75
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Keyword(s):
2014 ◽
Vol 17
◽
pp. 216-221
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2019 ◽
Vol 10
◽
pp. 1511-1522
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2013 ◽
Vol 832
◽
pp. 695-699
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2001 ◽
Vol 40
(Part 1, No. 5A)
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pp. 3364-3369
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Keyword(s):