Room Temperature Synthesis of Transparent and Conducting Indium Tin Oxide Films with High Mobility and Figure of Merit by RF-Magnetron Sputtering

2019 ◽  
Vol 48 (11) ◽  
pp. 7192-7202 ◽  
Author(s):  
Ajinkya Bhorde ◽  
Ravindra Waykar ◽  
Shruthi Nair ◽  
Haribhau Borate ◽  
Subhash Pandharkar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Figure Of Merit ◽  
Room Temperature ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
Temperature Synthesis ◽  
Room Temperature Synthesis ◽  
Tin Oxide Films

Characteristics of Indium Tin Oxide Films Deposited by DC and RF Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3364-3369 ◽  
Author(s):  
Wenli Deng ◽  
Taizo Ohgi ◽  
Hitoshi Nejo ◽  
Daisuke Fujita
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Tin Oxide Films

scholarly journals Indium Tin Oxide Films with Low Resistivity at Room Temperature Using DC Magnetron Sputtering with Grid Electrode

2014 ◽  
Vol 55 (3) ◽  
pp. 605-609 ◽  
Author(s):  
Ho-Nyun Lee ◽  
Jin-Young Hur ◽  
Hyun Jong Kim ◽  
Min Hyung Lee ◽  
Hong Kee Lee
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Films ◽  
Dc Magnetron Sputtering ◽  
Grid Electrode ◽  
Low Resistivity ◽  
Tin Oxide Films

(400)-Oriented indium tin oxide thin films with high mobility and figure of merit prepared by radio frequency magnetron sputtering

2020 ◽  
Vol 704 ◽  
pp. 137972 ◽  
Author(s):  
Ajinkya Bhorde ◽  
Ashok Jadhavar ◽  
Ravindra Waykar ◽  
Shruthi Nair ◽  
Haribhau Borate ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Figure Of Merit ◽  
High Mobility ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Oxide Thin Films

Indium Tin Oxide Films Grown at Room Temperature by RF-Magnetron Sputtering in Oxygen-Free Environment

2013 ◽  
Vol 200 ◽  
pp. 10-13 ◽  
Author(s):  
Dmitry Kudryashov ◽  
Alexander Gudovskikh ◽  
Kirill Zelentsov
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Argon Pressure ◽  
Sem Images ◽  
Sputtering Power ◽  
Free Environment ◽  
Ito Films

Indium Tin Oxide (ITO) thin films were grown at room temperature (RT) in oxygen-free environment by rf-magnetron sputtering on glass and Si(100)-substrates. The effects of argon pressure, sputtering power and film thickness on the electrical and optical properties of ITO films were investigated. For a 100 nm thick ITO films grown at RT in argon pressure 1.95∙10-3 mbar and sputtering power of 50 W, the transmittance was near 90% at 500 nm and resistivity was 5.4∙10-4 Ohm∙cm. It has been shown that the sputtering power plays an important role in electric properties of ITO films. SEM images of these samples show smooth surface with sharp substrate/ITO interface.

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