Kinetic Monte Carlo simulation of low-pressure chemical vapor deposition of silicon nitride: Impact of gas flow rate and temperature on silicon cluster size and density

2014 ◽  
Vol 26 ◽  
pp. 555-560 ◽  
Author(s):  
Adil Bouhadiche ◽  
Hachemi Bouridah ◽  
Noureddine Boutaoui
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Vapor Deposition ◽  
Cluster Size ◽  
Gas Flow ◽  
Kinetic Monte Carlo ◽  
Chemical Vapor ◽  
Silicon Cluster ◽  
Gas Flow Rate ◽  
Pressure Chemical

Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)

2013 ◽  
Vol 740-742 ◽  
pp. 393-396
Author(s):  
Maxim N. Lubov ◽  
Jörg Pezoldt ◽  
Yuri V. Trushin
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Cluster Size ◽  
Kinetic Monte Carlo ◽  
Nucleation And Growth ◽  
Nucleation Density ◽  
Nucleation Process ◽  
Impurity Effects ◽  
Kinetic Monte Carlo Simulations ◽  
The Mean

The influence of attractive and repulsive impurities on the nucleation process of the SiC clusters on Si(100) surface was investigated. Kinetic Monte Carlo simulations of the SiC clusters growth show that that increase of the impurity concentration (both attractive and repulsive) leads to decrease of the mean cluster size and rise of the nucleation density of the clusters.

Effect of Precursor Supply on (100) and (001) Orientations of α-Al2O3 Film Prepared by Laser CVD

2012 ◽  
Vol 508 ◽  
pp. 3-6 ◽  
Author(s):  
Kadokura Hokuto ◽  
Akihiko Ito ◽  
Teiichi Kimura ◽  
Takashi Goto
Keyword(s):  
Cross Section ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Laser Chemical Vapor Deposition ◽  
Evaporation Temperature ◽  
Oxygen Gas ◽  
Laser Cvd ◽  
Precursor Supply

Α-Al2O3 Films Were Prepared by Laser Chemical Vapor Deposition and the Effects of Precursor Evaporation Temperature (Tvap) and Oxygen Gas Flow Rate (FRo) on Phase and Orientation of Al2o3 Films Were Investigated. at Tvap = 413 K, (100)-Oriented α-Al2O3 and θ-Al2O3 Were Codeposited. the Amount of θ-Al2O3 Increased with Increasing FRo. at Tvap = 433–443 K, α-Al2O3 Films Showed a (001) Orientation. (100)- and (001)-Oriented α-Al2O3 Films Had a Rectangular- and Hexagonal-Shaped Grains, Respectively, and Showed a Columnar in Cross Section. Grain Size of (100)- and (001)-Oriented α-Al2O3 Films Decreased from 10 to 2 μm with Increasing FRo from 0.085 to 0.85 Pa m3 s−1. Deposition Rate Increased from 100 to 300 μm h−1 with Increasing Tvap from 413 to 443 K.

An all-atom kinetic Monte Carlo model for chemical vapor deposition growth of graphene on Cu(1 1 1) substrate

2020 ◽  
Vol 32 (15) ◽  
pp. 155401 ◽  
Author(s):  
Shuai Chen ◽  
Junfeng Gao ◽  
Bharathi M Srinivasan ◽  
Gang Zhang ◽  
Viacheslav Sorkin ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Model ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth
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