Impact of uniform and non-uniform doping variations for ultrathin body junctionless FinFETs

2019 ◽  
Vol 104 ◽  
pp. 104653 ◽  
Author(s):  
S. Manikandan ◽  
N.B. Balamurugan ◽  
T.S. Arun Samuel
Keyword(s):  
Author(s):  
Liangbo Huang ◽  
Jian Tian ◽  
Lei Liu ◽  
Ruxiao Di ◽  
Zihao Zhu

In this paper, the properties of two-dimensional (2D) gallium nitride (GaN) photocathodes with a uniform doping and variable doping structure are studied by using Mg as a doping element based on first principles. The stability, bandstructure, work function, density of state and optical properties of the GaN bilayer and GaN trilayer in two-doped ways are investigated. The results show that formation energy of variable doping structure is less than that of the uniform doping structure, which means that the variable doping structure is more stable. At the same time, the formation energy increases with increase of layers. The pristine GaN bilayer has an indirect bandgap, while the doped GaN bilayer transforms into a direct bandgap. The impurity levels appear in a forbidden band of doped GaN trilayers, which is favorable for electron transition. The results of work function reveal that variable doping structure has lower vacuum barriers and more electron escape numbers, which proves that it can improve the quantum efficiency of photocathodes. Finally, the analysis of optical properties shows that the uniform doping structure has better optical properties than that of the variable doping structure.


2010 ◽  
Vol 30 (5) ◽  
pp. 1492-1496 ◽  
Author(s):  
傅江涛 Fu Jiangtao ◽  
张松春 Zhang Songchun ◽  
常本康 Chang Benkang

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Hans He ◽  
Kyung Ho Kim ◽  
Andrey Danilov ◽  
Domenico Montemurro ◽  
Liyang Yu ◽  
...  
Keyword(s):  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
R. Barber ◽  
Q. Nguyen ◽  
J. Brockman ◽  
J. Gahl ◽  
J. Kwon

Abstract High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIMS analysis. The data from SIMS analysis also show consistent Ge doping concentration throughout the depth of the GaN wafers. After irradiation, the GaN was annealed in a nitrogen environment at 950 °C for 30 min. The neutron doping process turns out to produce spatially uniform doping throughout the whole volume of the GaN substrate.


2006 ◽  
Vol 4 (2) ◽  
pp. 234-245 ◽  
Author(s):  
Kaijian Zhang ◽  
Wei Xu ◽  
Xinjun Li ◽  
Shaojian Zheng ◽  
Gang Xu

AbstractThe thin films of TiO2 doped by Mn non-uniformly were prepared by sol-gel method under process control. In our preceding study, we investigated in detail, the effect of doping mode on the photocatalytic activity of TiO2 films showing that Mn non-uniform doping can greatly enhance the activity. In this study we looked at the effect of doping concentration on the photocatalytic activity of the TiO2 films. In this paper, the thin films were characterized by UV-vis spectrophotometer and electrochemical workstation. The activity of the photocatalyst was also evaluated by photocatalytic degradation rate of aqueous methyl orange under UV radiation. The results illustrate that the TiO2 thin film doped by Mn non-uniformly at the optimal dopant concentration (0.7 at %) is of the highest activity, and on the contrary, the activity of those doped uniformly is decreased. As a comparison, in 80 min, the degradation rate of methyl orange is 62 %, 12 % and 34 % for Mn non-uniform doping film (0.7 at %), the uniform doping film (0.7 at %) and pure titanium dioxide film, respectively. We have seen that, for the doping and the pure TiO2 films, the stronger signals of open circuit potential and transient photocurrent, the better photocatalytic activity. We also discusse the effect of dopant concentration on the photocatalytic activity of the TiO2 films in terms of effective separation of the photon-generated carriers in the semiconductor.


1984 ◽  
Vol 57 (5) ◽  
pp. 665-676
Author(s):  
YEN-CHU WANG ◽  
MAHMOUD BAHRAMI
Keyword(s):  

2016 ◽  
Vol 122 (6) ◽  
Author(s):  
Shulong Wang ◽  
Hongxia Liu ◽  
Hailin Zhang ◽  
Qing Chen

Author(s):  
Muhammad S Ullah ◽  
Emadelden Fouad ◽  
Xhino M. Domi

The VLSI industry is facing parasitic effects that trouble development in the nanoscale domain. However, instead of replacing the traditional MOSFET design, it would be more advantageous to apply different doping profiles and discerning which deal with specific parasitic effects the best. With a review of Gaussian doping, Uniform doping, and Delta doping profiles and analysis of the FET technology characteristics that use these doping profiles, a comparison can be made among them for integrated circuit design engineers. These doping profiles are compared based on how well they perform against non-ideal and ideal environments. Also, both digital and analog performance are measured to ensure the uniqueness of each doping profile that is present. After getting a list of benefits from each doping profile, it is derived to determine which doping profile works best against a host of parasitic effects and what type of application do these doping profiles have


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