Mechanical strength problem of thin silicon wafers (120 and 140 μm) cut with thinner diamond wires (Si kerf 120 → 100 μm) for photovoltaic use

The mechanical strength of ultra-thin 100 μm Si wafers was measured depending on Si growing methods and machining modes of wafer surface preparation (abrasive grinding, diamond paste polishing, chemical-mechanical polishing — CMP)

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Multiphysical modeling of nanosecond laser dicing on ultra-thin silicon wafers

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) ◽

10.1109/eurosime.2014.6813840 ◽

2014 ◽

Cited By ~ 3

Author(s):

G. Galasso ◽

M. Kaltenbacher ◽

B. Karunamurthy ◽

H. Eder ◽

T. Polster

Keyword(s):

Silicon Wafers ◽

Nanosecond Laser ◽

Thin Silicon

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Polariscopy Measurement of Residual Stress in Thin Silicon Wafers

Conference Proceedings of the Society for Experimental Mechanics Series - Residual Stress, Thermomechanics & Infrared Imaging, Hybrid Techniques and Inverse Problems, Volume 8 ◽

10.1007/978-3-319-00876-9_10 ◽

2013 ◽

pp. 79-85 ◽

Cited By ~ 3

Author(s):

K. Skenes ◽

R. G. R. Prasath ◽

S. Danyluk

Keyword(s):

Residual Stress ◽

Silicon Wafers ◽

Thin Silicon

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Backside Thinning and Stress-Relief Techniques for Thin Silicon Wafers

Handbook of 3D Integration ◽

10.1002/9783527670109.ch16 ◽

2014 ◽

pp. 207-226

Author(s):

Christof Landesberger ◽

Christoph Paschke ◽

Hans-Peter Spöhrle ◽

Karlheinz Bock

Keyword(s):

Stress Relief ◽

Silicon Wafers ◽

Thin Silicon

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Analysis of Silicon Micromachining by UV Lasers, and Implications for Full Cut Laser Dicing of Ultra-Thin Semiconductor Device Wafers

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/2010dpc-wp16 ◽

2010 ◽

Vol 2010 (DPC) ◽

pp. 001743-001759

Author(s):

Andy Hooper ◽

Daragh Finn

Keyword(s):

Cross Sections ◽

Laser Scanning ◽

Semiconductor Device ◽

Laser Pulses ◽

Silicon Wafers ◽

Silicon Devices ◽

Laser Fluences ◽

Slow Velocity ◽

3D Packaging ◽

Thin Silicon

3D packaging technologies such as FLASH rely on die-to-die stacking of ultra-thin silicon devices with individual die thicknesses below 100 um. Because ultra-thin silicon wafers are very fragile, mechanical saw dicing of sub 100 um thick wafers tends to be more challenging, requiring slower processing and reduced throughput and/or yields. These challenges make full cut laser dicing an attractive solution. This presentation provides an investigation for machining of 50 um thick silicon wafers using a Gaussian-shaped, nanosecond pulsewidth, 355 nm UV laser. A range of machining speeds and laser fluences are compared, from single laser pulses to highly overlapped slow-velocity machining. 3D Laser Scanning Microscope and FIB/TEM cross sections are employed to characterize the state and depth of heating damage into the Si material. Implications for laser machining rates and die break strength are investigated for full cut laser dicing.

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