Polariscopy Measurement of Residual Stress in Thin Silicon Wafers

2013 ◽  
pp. 79-85 ◽  
Author(s):  
K. Skenes ◽  
R. G. R. Prasath ◽  
S. Danyluk
Keyword(s):  
Residual Stress ◽  
Silicon Wafers ◽  
Thin Silicon

Finite element analysis of deflection and residual stress on machined ultra-thin silicon wafers

2011 ◽  
Vol 26 (10) ◽  
pp. 105002 ◽  
Author(s):  
Y B Tian ◽  
L Zhou ◽  
Z W Zhong ◽  
H Sato ◽  
J Shimizu
Keyword(s):  
Residual Stress ◽  
Finite Element Analysis ◽  
Finite Element ◽  
Silicon Wafers ◽  
Element Analysis ◽  
Thin Silicon

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

Backside Thinning and Stress-Relief Techniques for Thin Silicon Wafers

2014 ◽  
pp. 207-226
Author(s):  
Christof Landesberger ◽  
Christoph Paschke ◽  
Hans-Peter Spöhrle ◽  
Karlheinz Bock
Keyword(s):  
Stress Relief ◽  
Silicon Wafers ◽  
Thin Silicon

Analysis of Silicon Micromachining by UV Lasers, and Implications for Full Cut Laser Dicing of Ultra-Thin Semiconductor Device Wafers

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001743-001759
Author(s):  
Andy Hooper ◽  
Daragh Finn
Keyword(s):  
Cross Sections ◽  
Laser Scanning ◽  
Semiconductor Device ◽  
Laser Pulses ◽  
Silicon Wafers ◽  
Silicon Devices ◽  
Laser Fluences ◽  
Slow Velocity ◽  
3D Packaging ◽  
Thin Silicon

3D packaging technologies such as FLASH rely on die-to-die stacking of ultra-thin silicon devices with individual die thicknesses below 100 um. Because ultra-thin silicon wafers are very fragile, mechanical saw dicing of sub 100 um thick wafers tends to be more challenging, requiring slower processing and reduced throughput and/or yields. These challenges make full cut laser dicing an attractive solution. This presentation provides an investigation for machining of 50 um thick silicon wafers using a Gaussian-shaped, nanosecond pulsewidth, 355 nm UV laser. A range of machining speeds and laser fluences are compared, from single laser pulses to highly overlapped slow-velocity machining. 3D Laser Scanning Microscope and FIB/TEM cross sections are employed to characterize the state and depth of heating damage into the Si material. Implications for laser machining rates and die break strength are investigated for full cut laser dicing.

Ultra-Thin Silicon Wafers Fabrication and Inverted Pyramid Texturing Based on Cu-Catalyzed Chemical Etching

Silicon ◽  
2020 ◽  
Author(s):  
Altyeb Ali Abaker Omer ◽  
Zudong He ◽  
Shihao Hong ◽  
Yuanchih Chang ◽  
Jie Yu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Silicon Wafers ◽  
Inverted Pyramid ◽  
Thin Silicon

A study on the diamond grinding of ultra-thin silicon wafers

2011 ◽  
Vol 226 (1) ◽  
pp. 66-75 ◽  
Author(s):  
L Zhou ◽  
Y B Tian ◽  
H Huang ◽  
H Sato ◽  
J Shimizu
Keyword(s):  
Silicon Wafers ◽  
Diamond Grinding ◽  
Thin Silicon

scholarly journals X-Ray Measurement of Residual Stress in Patterned Aluminum Thin Films Sputtered on Silicon Wafers.

1998 ◽  
Vol 41 (2) ◽  
pp. 290-296 ◽  
Author(s):  
Keisuke TANAKA ◽  
Yoshiaki AKINIWA ◽  
Kaoru INOUE ◽  
Hiroyuki OHTA
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Wafers ◽  
X Ray
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