Effect of ferroelectric polarization field on different carrier migration in photoanode

2021 ◽  
Vol 133 ◽  
pp. 105958
Author(s):  
Yan Zhu ◽  
Xing Ji ◽  
Yuli Xiong ◽  
Jiangna Guo ◽  
Shuangrui Yao ◽  
...  
2007 ◽  
Vol 997 ◽  
Author(s):  
Sang-Hyun Lim ◽  
Alok C Rastogi ◽  
Seshu B Desu

AbstractMetal-Ferroelectric-Oxide-Si (MFEOS) field effect transistor (FET) with ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (PVDF-TrFE) gate for nonvolatile memory application is demonstrated. Memory window ascribed to ferroelectric polarization switching has been quantified by shift of threshold voltage are ~ 4-5V. Non saturating IDS is due to free ionic polarization field. IDS-VDS characteristics of functional FET are realized after AC poling.


2018 ◽  
Vol 29 (13) ◽  
pp. 134002 ◽  
Author(s):  
Xudong Wang ◽  
Yan Chen ◽  
Guangjian Wu ◽  
Jianlu Wang ◽  
Bobo Tian ◽  
...  

2021 ◽  
Vol 103 (21) ◽  
Author(s):  
Baoxing Zhai ◽  
Ruiqing Cheng ◽  
Wen Yao ◽  
Lei Yin ◽  
Chenhai Shen ◽  
...  

2021 ◽  
pp. 2100245
Author(s):  
Heyuan Guan ◽  
Jiyu Hong ◽  
Xiaoli Wang ◽  
Jingyuan Ming ◽  
Zilong Zhang ◽  
...  

2009 ◽  
Vol 94 (24) ◽  
pp. 241906 ◽  
Author(s):  
H. Shen ◽  
M. Wraback ◽  
H. Zhong ◽  
A. Tyagi ◽  
S. P. DenBaars ◽  
...  

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