Memory window in ferroelectric PVDF copolymer gate integrated MOSFET devices for nondestructive readout memory application
Keyword(s):
AbstractMetal-Ferroelectric-Oxide-Si (MFEOS) field effect transistor (FET) with ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (PVDF-TrFE) gate for nonvolatile memory application is demonstrated. Memory window ascribed to ferroelectric polarization switching has been quantified by shift of threshold voltage are ~ 4-5V. Non saturating IDS is due to free ionic polarization field. IDS-VDS characteristics of functional FET are realized after AC poling.
2008 ◽
Vol 47
(4)
◽
pp. 2103-2107
◽
Keyword(s):
2022 ◽
Vol 12
(1)
◽
pp. 201
2005 ◽
Vol 59
(10)
◽
pp. 1165-1168
◽
Keyword(s):
2020 ◽
pp. 101-112
Keyword(s):