Graphene Dirac point tuned by ferroelectric polarization field

2018 ◽  
Vol 29 (13) ◽  
pp. 134002 ◽  
Author(s):  
Xudong Wang ◽  
Yan Chen ◽  
Guangjian Wu ◽  
Jianlu Wang ◽  
Bobo Tian ◽  
...  
2007 ◽  
Vol 997 ◽  
Author(s):  
Sang-Hyun Lim ◽  
Alok C Rastogi ◽  
Seshu B Desu

AbstractMetal-Ferroelectric-Oxide-Si (MFEOS) field effect transistor (FET) with ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (PVDF-TrFE) gate for nonvolatile memory application is demonstrated. Memory window ascribed to ferroelectric polarization switching has been quantified by shift of threshold voltage are ~ 4-5V. Non saturating IDS is due to free ionic polarization field. IDS-VDS characteristics of functional FET are realized after AC poling.


2021 ◽  
Vol 133 ◽  
pp. 105958
Author(s):  
Yan Zhu ◽  
Xing Ji ◽  
Yuli Xiong ◽  
Jiangna Guo ◽  
Shuangrui Yao ◽  
...  

2021 ◽  
pp. 150182
Author(s):  
Maosheng Yang ◽  
Tengteng Li ◽  
Ju Gao ◽  
Xin Yan ◽  
Lanju Liang ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kyungchan Lee ◽  
Gunnar F. Lange ◽  
Lin-Lin Wang ◽  
Brinda Kuthanazhi ◽  
Thaís V. Trevisan ◽  
...  

AbstractTime reversal symmetric (TRS) invariant topological insulators (TIs) fullfil a paradigmatic role in the field of topological materials, standing at the origin of its development. Apart from TRS protected strong TIs, it was realized early on that more confounding weak topological insulators (WTI) exist. WTIs depend on translational symmetry and exhibit topological surface states only in certain directions making it significantly more difficult to match the experimental success of strong TIs. We here report on the discovery of a WTI state in RhBi2 that belongs to the optimal space group P$$\bar{1}$$ 1 ¯ , which is the only space group where symmetry indicated eigenvalues enumerate all possible invariants due to absence of additional constraining crystalline symmetries. Our ARPES, DFT calculations, and effective model reveal topological surface states with saddle points that are located in the vicinity of a Dirac point resulting in a van Hove singularity (VHS) along the (100) direction close to the Fermi energy (EF). Due to the combination of exotic features, this material offers great potential as a material platform for novel quantum effects.


2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Turgut Yilmaz ◽  
Xiao Tong ◽  
Zhongwei Dai ◽  
Jerzy T. Sadowski ◽  
Eike F. Schwier ◽  
...  

AbstractFlat band electronic states are proposed to be a fundamental tool to achieve various quantum states of matter at higher temperatures due to the enhanced electronic correlations. However, materials with such peculiar electronic states are rare and often rely on subtle properties of the band structures. Here, by using angle-resolved photoemission spectroscopy, we show the emergent flat band in a VSe2 / Bi2Se3 heterostructure. Our photoemission study demonstrates that the flat band covers the entire Brillouin zone and exhibits 2D nature with a complex circular dichroism. In addition, the Dirac cone of Bi2Se3 is not reshaped by the flat band even though they overlap in proximity of the Dirac point. These features make this flat band distinguishable from the ones previously found. Thereby, the observation of a flat band in the VSe2 / Bi2Se3 heterostructure opens a promising pathway to realize strongly correlated quantum effects in topological materials.


2021 ◽  
Vol 103 (21) ◽  
Author(s):  
Baoxing Zhai ◽  
Ruiqing Cheng ◽  
Wen Yao ◽  
Lei Yin ◽  
Chenhai Shen ◽  
...  

2021 ◽  
pp. 2100245
Author(s):  
Heyuan Guan ◽  
Jiyu Hong ◽  
Xiaoli Wang ◽  
Jingyuan Ming ◽  
Zilong Zhang ◽  
...  

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