scholarly journals Refractive index changes in amorphous SiO2 (silica) by swift ion irradiation

Author(s):  
O. Peña-Rodríguez ◽  
J. Manzano-Santamaría ◽  
J. Olivares ◽  
A. Rivera ◽  
F. Agulló-López
2020 ◽  
Vol 4 (4) ◽  
pp. 39
Author(s):  
Hiroshi Amekura ◽  
Rang Li ◽  
Nariaki Okubo ◽  
Norito Ishikawa ◽  
Feng Chen

Evolution of depth profiles of the refractive index in Y3Al5O12 (YAG) crystals were studied under 200 MeV 136Xe14+ ion irradiation, since the index can be related with the stress change and/or the defect formation by the irradiation. Using the prism-coupling and the end-surface coupling methods, various waveguide (WG) modes were detected. Then, the index depth profiles were determined by reproducing the observed WG modes. The index changes were observed at three different depth regions; (i) a sharp dip at 13 μm in depth, which is attributed to the nuclear stopping Sn peak, (ii) a plateau near the surface between 0 and 3 μm in depth, which can be ascribed to the electronic stopping Se, since Se has a very broad peak at the surface, and (iii) a broad peak at 6 μm in depth. Since the last peak is ascribed to neither of Se nor Sn peak, it could be attributed to the synergy effect of Se and Sn.


2009 ◽  
Vol 98 (4) ◽  
pp. 909-912 ◽  
Author(s):  
Mohammad-Reza Zamani-Meymian ◽  
Lena Jentjens ◽  
Niels L. Raeth ◽  
Konrad Peithmann ◽  
Karl Maier

2003 ◽  
Author(s):  
Bradley F. Chmelka ◽  
Earl Danielson ◽  
Michael D. Wyrsta

2011 ◽  
Vol 25 (07) ◽  
pp. 497-507 ◽  
Author(s):  
M. J. KARIMI ◽  
A. KESHAVARZ ◽  
A. POOSTFORUSH

In this work, the optical absorption coefficients and the refractive index changes for the infinite and finite semi-parabolic quantum well are calculated. Numerical calculations are performed for typical GaAs / Al x Ga 1-x As semi-parabolic quantum well. The energy eigenvalues and eigenfunctions of these systems are calculated numerically. Optical properties are obtained using the compact density matrix approach. Results show that the energy eigenvalues and the matrix elements of the infinite and finite cases are different. The calculations reveal that the resonant peaks of the optical properties of the finite case occur at lower values of the incident photon energy with respect to the infinite case. Results indicate that the maximum value of the refractive index changes for the finite case are greater than that of the infinite case. Our calculations also show that in contrast to the infinite case, the resonant peak value of the total absorption coefficient in the case of the finite well is a non-monotonic function of the semi-parabolic confinement frequency.


1998 ◽  
Author(s):  
Thomas Keating ◽  
Jeffrey R. Minch ◽  
Seoung-Hwan Park ◽  
Shun-Lien Chuang ◽  
Tawee Tanbun-Ek

1983 ◽  
Vol 76 (2) ◽  
pp. K171-K174 ◽  
Author(s):  
H. Beez ◽  
D. Fasold ◽  
H. Karge

2002 ◽  
Vol 726 ◽  
Author(s):  
K. Simmons-Potter ◽  
G. M. Jamison ◽  
B. G. Potter ◽  
W. J. Thomes ◽  
C. C. Phifer

AbstractThe present work investigates the intrinsic photosensitivity of a family of poly(alkyl)(aryl)silanes and poly(hydridophenyl)silane for use in the development of photoimprinted waveguide devices. Limited testing of passive optical behavior (e.g. absorption, refractive index) and photosensitive response was performed for these materials in thin film form. It was determined that the materials exhibited dramatic photobleaching under 248 nm (KrF excimer laser) exposure. Based on a Kramers-Kronig analysis of the absorption changes, refractive index changes on the order of - 0.1 are estimated. Confirmation of this calculation has been provided via ellipsometry which estimates refractive index changes at 632 nm of -0.14 ± 0.01. In addition, embedded strips have been photoimprinted into the material to confirm waveguiding capacity of the films. Possible sources of photosensitivity in this material and its potential for application in various device configurations will be discussed.


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