Equilibrium thickness of carbon target interacting with nitrogen and neon ion beams

2016 ◽  
Vol 373 ◽  
pp. 35-39 ◽  
Author(s):  
Yu.A. Belkova ◽  
N.V. Novikov ◽  
Ya.A. Teplova
Keyword(s):  
Ion Beams ◽  
Carbon Target ◽  
Equilibrium Thickness ◽  
Neon Ion

scholarly journals Qualitative and quantitative difference in mutation induction between carbon- and neon-ion beams in normal human cells.

2003 ◽  
Vol 17 (4) ◽  
pp. 302-306 ◽  
Author(s):  
Masao Suzuki ◽  
Chizuru Tsuruoka ◽  
Tatsuaki Kanai ◽  
Takeshi Kato ◽  
Fumio Yatagai ◽  
...  
Keyword(s):  
Quantitative Difference ◽  
Ion Beams ◽  
Human Cells ◽  
Mutation Induction ◽  
Qualitative And Quantitative ◽  
Normal Human ◽  
Normal Human Cells ◽  
Neon Ion

scholarly journals Advantages of Helium and Neon Ion Beams for Intelligent Imaging

2014 ◽  
Vol 20 (S3) ◽  
pp. 338-339 ◽  
Author(s):  
Huimeng Wu ◽  
Shawn Mcvey ◽  
David Ferranti ◽  
Chuong Huynh ◽  
John Notte ◽  
...  
Keyword(s):  
Ion Beams ◽  
Neon Ion

Estimating the biological effects of helium, carbon, oxygen, and neon ion beams using 3D silicon microdosimeters

2020 ◽  
Author(s):  
Sung Hyun Lee ◽  
Kota Mizushima ◽  
Ryosuke Kohno ◽  
Yoshiyuki Iwata ◽  
Shunsuke Yonai ◽  
...  
Keyword(s):  
Biological Effects ◽  
Ion Beams ◽  
Neon Ion

Implications of Helium and Neon Ion Beam Chemistry for Advanced Circuit Editing

2013 ◽  
Author(s):  
H. Wu ◽  
D. Ferranti ◽  
L.A. Stern ◽  
D. Xia ◽  
M.W. Phaneuf
Keyword(s):  
Integrated Circuit ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Ion Beams ◽  
Ion Source ◽  
Metal Deposition ◽  
Focused Ion Beams ◽  
Gas Field ◽  
General Utility ◽  
Neon Ion

Abstract Gallium focused ion beams (Ga-FIB) have been used historically in the semiconductor industry for failure analysis, as well as circuit edit. However, in spite of the best of these efforts, as integrated circuit dimensions continue to shrink, Ga-FIB induced processes are being driven to their physical limits. The main purpose of this paper is to report the helium and neon ion beams' induced chemistry, including metal deposition, dielectric deposition, and chemically enhanced etching. Two simple examples are shown as proofs of concept demonstrating gas field ion source (GFIS) development for circuit edit applications. The paper summarizes the general utility of helium and neon ion beams for metal deposition, dielectric deposition, and sputtering and etching processes, and discusses some of the technical challenges associated with current GFIS technology. Using GFIS ion beams, it has been observed that the top and buried metal lines can be cut precisely and then reconnected.

Triply charged argon and neon ion beams from ion beams rf sources

1978 ◽  
Vol 157 (3) ◽  
pp. 607-609 ◽  
Author(s):  
E.J. Knystautas ◽  
R. Lapointe
Keyword(s):  
Ion Beams ◽  
Neon Ion

scholarly journals Deuterium retention in recrystallized tungsten irradiated with simultaneous deuterium–neon ion beams

2017 ◽  
Vol 12 ◽  
pp. 1288-1293 ◽  
Author(s):  
T.J. Finlay ◽  
J.W. Davis ◽  
T. Schwarz-Selinger ◽  
Z. Siketić ◽  
A.A. Haasz
Keyword(s):  
Ion Beams ◽  
Deuterium Retention ◽  
Neon Ion
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