Comparison of profile tailing in SIMS analyses of various impurities in silicon using nitrogen, oxygen, and neon ion beams at near-normal incidence

Abstract Gallium focused ion beams (Ga-FIB) have been used historically in the semiconductor industry for failure analysis, as well as circuit edit. However, in spite of the best of these efforts, as integrated circuit dimensions continue to shrink, Ga-FIB induced processes are being driven to their physical limits. The main purpose of this paper is to report the helium and neon ion beams' induced chemistry, including metal deposition, dielectric deposition, and chemically enhanced etching. Two simple examples are shown as proofs of concept demonstrating gas field ion source (GFIS) development for circuit edit applications. The paper summarizes the general utility of helium and neon ion beams for metal deposition, dielectric deposition, and sputtering and etching processes, and discusses some of the technical challenges associated with current GFIS technology. Using GFIS ion beams, it has been observed that the top and buried metal lines can be cut precisely and then reconnected.

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Triply charged argon and neon ion beams from ion beams rf sources

Nuclear Instruments and Methods ◽

10.1016/0029-554x(78)90024-1 ◽

1978 ◽

Vol 157 (3) ◽

pp. 607-609 ◽

Cited By ~ 6

Author(s):

E.J. Knystautas ◽

R. Lapointe

Keyword(s):

Ion Beams ◽

Neon Ion

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Experimental validation of stochastic microdosimetric kinetic model for multi-ion therapy treatment planning with helium-, carbon-, oxygen-, and neon-ion beams

Physics in Medicine and Biology ◽

10.1088/1361-6560/ab6eba ◽

2020 ◽

Vol 65 (4) ◽

pp. 045005 ◽

Cited By ~ 3

Author(s):

Taku Inaniwa ◽

Masao Suzuki ◽

Sung Hyun Lee ◽

Kota Mizushima ◽

Yoshiyuki Iwata ◽

...

Keyword(s):

Kinetic Model ◽

Treatment Planning ◽

Experimental Validation ◽

Ion Beams ◽

Ion Therapy ◽

Therapy Treatment ◽

Neon Ion

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LOW-DAMAGE SURFACE TREATMENT BY GAS CLUSTER-ION BEAMS

Surface Review and Letters ◽

10.1142/s0218625x96001601 ◽

1996 ◽

Vol 03 (01) ◽

pp. 891-895 ◽

Cited By ~ 7

Author(s):

M. AKIZUKI ◽

M. HARADA ◽

Y. MIYAI ◽

A. DOI ◽

T. YAMAGUCHI ◽

...

Keyword(s):

Room Temperature ◽

Ion Irradiation ◽

Normal Incidence ◽

Ion Beams ◽

Low Doses ◽

Si Substrate ◽

Irradiation Effects ◽

Cluster Ion Beams ◽

Cluster Ion ◽

Substrate Surfaces

Low-damage irradiation effects of gas cluster-ion beams have been studied at acceleration voltages below 20 kV. The surfaces of targets have been smoothened significantly by CO 2-cluster-ion irradiation at normal incidence. Si substrate surfaces have been cleaned and exhibited low damage after CO 2- and Ar-cluster-ion irradiation at low doses. In the case of CO 2-cluster-ion irradiation, SiO 2 film of about 5.5-nm thickness have grown on Si substrate at room temperature. A damaged layer of less than 2.5-nm thickness has been formed underneath the SiO 2 film.

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