scholarly journals Fundamentals and Present Aspects of Ion Beam Technology. V. Application of Ion Beam. 4. Application to Life Science. 4.3. Cell death and mutation induction by carbon- and neon-ion beams.

RADIOISOTOPES ◽  
1995 ◽  
Vol 44 (11) ◽  
pp. 818-823
Author(s):  
Masao SUZUKI
Keyword(s):  
Cell Death ◽  
Life Science ◽  
Ion Beam ◽  
Ion Beams ◽  
Mutation Induction ◽  
Neon Ion

scholarly journals Qualitative and quantitative difference in mutation induction between carbon- and neon-ion beams in normal human cells.

2003 ◽  
Vol 17 (4) ◽  
pp. 302-306 ◽  
Author(s):  
Masao Suzuki ◽  
Chizuru Tsuruoka ◽  
Tatsuaki Kanai ◽  
Takeshi Kato ◽  
Fumio Yatagai ◽  
...  
Keyword(s):  
Quantitative Difference ◽  
Ion Beams ◽  
Human Cells ◽  
Mutation Induction ◽  
Qualitative And Quantitative ◽  
Normal Human ◽  
Normal Human Cells ◽  
Neon Ion

Implications of Helium and Neon Ion Beam Chemistry for Advanced Circuit Editing

2013 ◽  
Author(s):  
H. Wu ◽  
D. Ferranti ◽  
L.A. Stern ◽  
D. Xia ◽  
M.W. Phaneuf
Keyword(s):  
Integrated Circuit ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Ion Beams ◽  
Ion Source ◽  
Metal Deposition ◽  
Focused Ion Beams ◽  
Gas Field ◽  
General Utility ◽  
Neon Ion

Abstract Gallium focused ion beams (Ga-FIB) have been used historically in the semiconductor industry for failure analysis, as well as circuit edit. However, in spite of the best of these efforts, as integrated circuit dimensions continue to shrink, Ga-FIB induced processes are being driven to their physical limits. The main purpose of this paper is to report the helium and neon ion beams' induced chemistry, including metal deposition, dielectric deposition, and chemically enhanced etching. Two simple examples are shown as proofs of concept demonstrating gas field ion source (GFIS) development for circuit edit applications. The paper summarizes the general utility of helium and neon ion beams for metal deposition, dielectric deposition, and sputtering and etching processes, and discusses some of the technical challenges associated with current GFIS technology. Using GFIS ion beams, it has been observed that the top and buried metal lines can be cut precisely and then reconnected.

Ion beam mutagenesis - an innovative and effective method for plant breeding and gene discovery.

2021 ◽  
pp. 411-423
Author(s):  
Tomoko Abe ◽  
Hiroyuki Ichida ◽  
Yoriko Hayashi ◽  
Ryouhei Morita ◽  
Yuki Shirakawa ◽  
...  
Keyword(s):  
Plant Breeding ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Single Gene ◽  
Heavy Ion ◽  
Ion Beams ◽  
Mutation Induction ◽  
Chemical Research ◽  
Large Deletions ◽  
Ri Beam

Abstract We have developed a unique technology for mutation induction of plants using energetic ion beams at the RI Beam Factory (RIBF) of Rikagaku Kenkyūjo (RIKEN) (Institute of Physical and Chemical Research). Ion beams effectively induce mutations at relatively low doses without severely inhibiting growth. The irradiation treatment can be given to various plant materials and mutation can be induced in a short time, between seconds and a few minutes. The linear energy transfer (LET) of ions depends on the nuclide and velocity. Since LET value affects the mutation frequency, it is an important parameter to determine the most effective irradiation condition in mutagenesis. We determined the most effective dose in each LET for mutation induction in imbibed rice seeds. Subsequently, we analysed the mutated DNA responsible for the phenotype in morphological mutants. Most of the mutations were small deletions of less than 100 bp. Irradiations of C-ions and Ne-ions are effective for plant breeding because of the very high mutation rate and sufficient energy to disrupt a single gene. On the other hand, all mutations induced by Ar-ion (290 keV/μm) irradiation were large deletions ranging from 176 bp to approximately 620 kb. The average number of mutations in the target exon regions was 7.3, 8.5 and 4.3 per M3 mutant plant in C-ions, Ne-ions and Ar-ions, respectively. The number of mutations induced by heavy-ion irradiation was relatively small. We could identify six responsible genes for eight mutants induced by C-ion and Ne-ion irradiations and two responsible genes for four mutants induced by Ar-ion irradiation. Three of these were genes not previously described.

scholarly journals Mutagenic Effect of Three Ion Beams on Rice and Identification of Heritable Mutations by Whole Genome Sequencing

Plants ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 551
Author(s):  
Yunchao Zheng ◽  
Shan Li ◽  
Jianzhong Huang ◽  
Haowei Fu ◽  
Libin Zhou ◽  
...  
Keyword(s):  
Whole Genome Sequencing ◽  
Genome Sequencing ◽  
Ion Beam ◽  
Mutagenic Effect ◽  
High Energy ◽  
Ion Beams ◽  
Mutation Induction ◽  
Whole Genome ◽  
Induced Mutations ◽  
Beam Radiation

High-energy ion beams are known to be an effective and unique type of physical mutagen in plants. However, no study on the mutagenic effect of argon (Ar) ion beam radiation on rice has been reported. Genome-wide studies on induced mutations are important to comprehend their characteristics for establishing knowledge-based protocols for mutation induction and breeding, which are still very limited in rice. The present study aimed to investigate the mutagenic effect of three ion beams, i.e., Ar, carbon (C) and neon (Ne) on rice and identify and characterize heritable induced mutations by the whole genome sequencing of six M4 plants. Dose-dependent damage effects were observed on M1 plants, which were developed from ion beam irradiated dry seeds of two indica (LH15, T23) and two japonica (DS551, DS48) rice lines. High frequencies of chlorophyll-deficient seedlings and male-sterile plants were observed in all M2 populations (up to ~30% on M1 plant basis); plants from the seeds of different panicles of a common M1 plant appeared to have different mutations; the whole genome-sequencing demonstrated that there were 236–453 mutations in each of the six M4 plants, including single base substitutions (SBSs) and small insertion/deletions (InDels), with the number of SBSs ~ 4–8 times greater than that of InDels; SBS and InDel mutations were distributed across different genomic regions of all 12 chromosomes, however, only a small number of mutations (0–6) were present in exonic regions that might have an impact on gene function. In summary, the present study demonstrates that Ar, C and Ne ion beam radiation are all effective for mutation induction in rice and has revealed at the genome level the characteristics of the mutations induced by the three ion beams. The findings are of importance to the efficient use of ion beam radiation for the generation and utilization of mutants in rice.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

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