Sensors-on-Paper: Fabrication of Graphite Thermal Sensor Arrays on Cellulose Paper for Large Area Temperature Mapping

ABSTRACTLarge area polymer photodiode arrays were designed and fabricated for full-color imaging applications. These sensor arrays are of high photosensitivity, low dark current, large dynamic range and fast response time. The red, green and blue color primaries were achieved by coupling a set of color filters with the polymer sensor pixels with broad response covering entire visible spectrum. Image recovery process from the pixel photocurrent data was developed, which is suitable generally to image arrays with power-law light intensity dependence and with finite pixel dark current. Large sensing length photodiode arrays (2.5”5”) were fabricated with pixel densities from 40 to 100 dot-per-inch. They were used as the sensing elements in page size document scanners. Voltage switchable polymer photodetectors were developed. Their photosensitivity can be switched on and off with external bias. These devices can be used as the sensing elements in x-y addressable two-dimensional sensor matrices. The high on/off switching ratio and high photocurrent/dark-current ratio allow such two-dimensional, passive photosensor matrices be used for image sensing applications.

Download Full-text

Fabrication and testing of large-area flexible electronics for displays and sensor arrays

2010 28th VLSI Test Symposium (VTS) ◽

10.1109/vts.2010.5469611 ◽

2010 ◽

Cited By ~ 1

Author(s):

William S. Wong

Keyword(s):

Flexible Electronics ◽

Sensor Arrays ◽

Large Area

Download Full-text

Fabrication and Analysis of Amorphous Silicon TFT

International Journal of Electrical and Computer Engineering (IJECE) ◽

10.11591/ijece.v7i2.pp754-758 ◽

2017 ◽

Vol 7 (2) ◽

pp. 754

Author(s):

Srikanth G ◽

Yadhuraj S R ◽

Subramanyam T K ◽

Satheesh Babu Gandla ◽

Uma B V

Keyword(s):

Amorphous Silicon ◽

Active Layer ◽

Semiconducting Materials ◽

Large Area ◽

Conducting Materials ◽

Display Technology ◽

Paper Fabrication ◽

Large Area Electronics

The display technology and large area electronics got momentum with the introduction of TFT devices. TFTs can be made using different semiconducting materials or organic conducting materials as the active layer. Each one of them differ in their performance depending on the material used for the active layer. In this paper, fabrication of amorphous silicon TFT using PECVD is carried out. Simulation of the a-Si: H TFT is also carried out with the dimensions similar to that of the masks used for the fabrication. The I<sub>d</sub>-V<sub>d</sub> plot for both the simulation and fabrication is obtained and studied.

Download Full-text

Electronic skins and machine learning for intelligent soft robots

Science Robotics ◽

10.1126/scirobotics.aaz9239 ◽

2020 ◽

Vol 5 (41) ◽

pp. eaaz9239 ◽

Cited By ~ 13

Author(s):

Benjamin Shih ◽

Dylan Shah ◽

Jinxing Li ◽

Thomas G. Thuruthel ◽

Yong-Lae Park ◽

...

Keyword(s):

Machine Learning ◽

Real World ◽

Sensor Arrays ◽

Behavioral Changes ◽

Physical Contact ◽

Large Area ◽

Soft Robots ◽

Multimodal Sensing ◽

Recent Developments ◽

Deformable Materials

Soft robots have garnered interest for real-world applications because of their intrinsic safety embedded at the material level. These robots use deformable materials capable of shape and behavioral changes and allow conformable physical contact for manipulation. Yet, with the introduction of soft and stretchable materials to robotic systems comes a myriad of challenges for sensor integration, including multimodal sensing capable of stretching, embedment of high-resolution but large-area sensor arrays, and sensor fusion with an increasing volume of data. This Review explores the emerging confluence of e-skins and machine learning, with a focus on how roboticists can combine recent developments from the two fields to build autonomous, deployable soft robots, integrated with capabilities for informative touch and proprioception to stand up to the challenges of real-world environments.

Download Full-text

2D Image Sensing Arrays with NIP Diodes

MRS Proceedings ◽

10.1557/proc-297-939 ◽

1993 ◽

Vol 297 ◽

Cited By ~ 18

Author(s):

C Van Berkel ◽

N C Bird ◽

C J Curling ◽

I D French

Keyword(s):

Sensor Arrays ◽

Image Sensor ◽

Transient Current ◽

Medical Applications ◽

Device Performance ◽

Large Area ◽

Active Matrix ◽

Test Array ◽

Image Sensing ◽

Trap Filling

2D image sensor arrays made with a-Si devices on glass over large area are of considerable interest as document scanners and in medical applications. We have made a test array containing a-Si NIP diodes for both the sensors and the active matrix switching devices. The issues of vertical crosstalk and image lag are discussed in relation to the device performance of the switching diode. The vertical crosstalk is controlled by the diode capacitance and the image lag by the high transient current in the device. We speculate that the transient current is a trap filling current in the deep states of the switching diode.

Download Full-text

Large Area Image Sensor Arrays

Technology and Applications of Amorphous Silicon - Springer Series in Materials Science ◽

10.1007/978-3-662-04141-3_4 ◽

2000 ◽

pp. 147-221 ◽

Cited By ~ 28

Author(s):

Robert Street

Keyword(s):

Sensor Arrays ◽

Image Sensor ◽

Large Area

Download Full-text

High Resolution, High Fill Factor A-SI:H Sensor Arrays for Optical Imaging

MRS Proceedings ◽

10.1557/proc-557-809 ◽

1999 ◽

Vol 557 ◽

Cited By ~ 5

Author(s):

J.T. Rahn ◽

F. Lemmi ◽

P. Mei ◽

J.P. Lu ◽

J.B. Boyce ◽

...

Keyword(s):

Fill Factor ◽

Sensor Arrays ◽

Dimensional Structure ◽

Pixel Size ◽

Large Area ◽

Leakage Currents ◽

Active Matrix ◽

3 Dimensional ◽

Layer Contact ◽

High Fill Factor

AbstractAmorphous silicon large area sensor arrays are in production for x-ray medical imaging. The most common pixel design works very well for many applications but is limited in spatial resolution because the available sensor area (the fill factor) vanishes in small pixels. One solution is a 3-dimensional structure in which the sensor is placed above the active matrix addressing. However, such high fill factor designs have previously introduce cross talk between pixels.We present data for a design in which the a-Si:H p-i-n photodiode sensor layer has a continuous i-layer and top p+-layer, and a patterned n+-layer contact to the pixel. Arrays of 64 μm and 75μm pitch have been fabricated and are the highest resolution a-Si:H arrays reported to date. The resolution matches the pixel size, and sensitivity has been improved by the high fill factor. Comparison is made between arrays with standard TFTs and TFTs with self-aligned source and drain contacts. Data line capacitance is improved by use of the self-aligned contacts.Measurements are included on the contact to bias capacitance. The high fill factor design greatly suppresses lateral leakage currents, while retaining ease of processing. Provided illumination levels remain below saturation, the resolution matches expectation for the pixel size.

Download Full-text