Scan-path dependence of surface ripples on Si thin films induced by laser irradiation with an asymmetric Gaussian beam

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.

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In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

physica status solidi (a) ◽

10.1002/pssa.201330056 ◽

2013 ◽

Vol 210 (12) ◽

pp. 2729-2735 ◽

Cited By ~ 1

Author(s):

Ingmar Höger ◽

Thomas Schmidt ◽

Anja Landgraf ◽

Martin Schade ◽

Annett Gawlik ◽

...

Keyword(s):

Thin Films ◽

Laser Irradiation ◽

Excimer Laser ◽

Polycrystalline Silicon ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Silicon Thin Films ◽

Excimer Laser Irradiation

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Effect of KrF Laser Irradiation on the Morphology and Microstructure of Amorphous PZT Thin Films Grown by RF Magnetron Sputtering

Journal of Electronic Materials ◽

10.1007/s11664-021-08980-y ◽

2021 ◽

Author(s):

Mohammed Mahdi ◽

Mohamed Kadri

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Laser Irradiation ◽

Rf Magnetron Sputtering ◽

Pzt Thin Films ◽

Krf Laser

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Laser Induced Oxidation Effects in Bismuth Thin Films

MRS Proceedings ◽

10.1557/opl.2012.1720 ◽

2012 ◽

Vol 1477 ◽

Cited By ~ 3

Author(s):

Marco A. Zepeda ◽

Michel Picquart ◽

Emmanuel Haro-Poniatowski

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Laser Irradiation ◽

Raman Spectra ◽

Exposure Time ◽

Oxidation Process ◽

Energy Dispersion Spectroscopy ◽

Irradiation Power ◽

Pure Bismuth ◽

532 Nm

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).

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