Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

2015 ◽  
Vol 18 ◽  
pp. 77-83 ◽  
Author(s):  
Yongsung Ji ◽  
Sang-A Lee ◽  
An-Na Cha ◽  
Munju Goh ◽  
Sukang Bae ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Active Component ◽  
Graphene Quantum Dots ◽  
Memory Cell ◽  
Organic Memory ◽  
Switching Characteristics

All-printed and highly stable organic resistive switching device based on graphene quantum dots and polyvinylpyrrolidone composite

2015 ◽  
Vol 25 ◽  
pp. 225-231 ◽  
Author(s):  
Shawkat Ali ◽  
Jinho Bae ◽  
Chong Hyun Lee ◽  
Kyung Hyun Choi ◽  
Yang Hoi Doh
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Graphene Quantum Dots ◽  
Switching Device

Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol

2019 ◽  
Vol 30 (25) ◽  
pp. 255701 ◽  
Author(s):  
Artem I Ivanov ◽  
Nadezhda A Nebogatikova ◽  
Igor A Kotin ◽  
Svetlana A Smagulova ◽  
Irina V Antonova
Keyword(s):  
Quantum Dots ◽  
Polyvinyl Alcohol ◽  
Resistive Switching ◽  
Graphene Quantum Dots ◽  
Graphene Films ◽  
Fluorinated Graphene

Investigation of thermally robust single-component resistive switching organic memory cell

2009 ◽  
Author(s):  
Yongbian Kuang ◽  
Ru Huang ◽  
Dake Wu ◽  
Yu Tang ◽  
Zhe Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Cell ◽  
Single Component ◽  
Organic Memory

Eliminating failure behavior by introducing CdS inter-layer in Cu2O-based memory cell

2018 ◽  
Vol 81 (2) ◽  
pp. 20101 ◽  
Author(s):  
Weijie Duan ◽  
Zhenxing Liu ◽  
Yang Zhang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Memory Cell ◽  
Memory Device ◽  
Failure Behavior ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Non Volatile Memory ◽  
Switching Characteristics ◽  
High Set

Resistive switching random access memory (RRAM) has attracted great attention due to its outstanding performance for the next generation non-volatile memory. However, the unexpected failure behaviors seriously hinder the further studies and applications of this new memory device. In this work, the bipolar resistive switching characteristics in Pt/CdS/Cu2O/FTO cells are investigated. The CdS inter-layer is used to suppress the failure behavior in set process. Comparing to the Pt/Cu2O/FTO cell, the switching process in Pt/CdS/Cu2O/FTO cell is not affected even at a high set voltage and the failure behavior is eliminated effectively. Therefore, this work proposes a feasible approach to solve the failure problem in RRAM.

Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM

2021 ◽  
Vol 118 (1) ◽  
pp. 013501
Author(s):  
Yiwei Duan ◽  
Haixia Gao ◽  
Jingshu Guo ◽  
Mei Yang ◽  
Zhenxi Yu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Switching Characteristics
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