Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
Keyword(s):
2012 ◽
Vol 51
(4S)
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pp. 04DD14
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2012 ◽
Vol 51
◽
pp. 04DD14
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Keyword(s):
Keyword(s):
2018 ◽
Vol 65
(9)
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pp. 3775-3779
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Keyword(s):
2018 ◽
Vol 51
(22)
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pp. 225102
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