High-Efficiency and Stable Quantum Dot Light-Emitting Diodes Enabled by a Solution-Processed Metal-Doped Nickel Oxide Hole Injection Interfacial Layer

2017 ◽  
Vol 27 (42) ◽  
pp. 1704278 ◽  
Author(s):  
Fan Cao ◽  
Haoran Wang ◽  
Piaoyang Shen ◽  
Xiaomin Li ◽  
Yanqiong Zheng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Nickel Oxide ◽  
Interfacial Layer ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Stable Quantum ◽  
Metal Doped

Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layer

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7281-7290 ◽  
Author(s):  
Hyo-Min Kim ◽  
Jeonggi Kim ◽  
Jin Jang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Nickel Oxide ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Copper Nickel ◽  
Hole Transporting

Herein, we report all solution-processed green quantum-dot light-emitting diodes (G-QLEDs) by introducing a perfluorinated ionomer (PFI, Nafion 117) into quantum dots (QDs) to improve hole injection.

scholarly journals Light-Emitting Diodes: Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes (Small 2/2014)

Small ◽  
2014 ◽  
Vol 10 (2) ◽  
pp. 246-246 ◽  
Author(s):  
Xuyong Yang ◽  
Evren Mutlugun ◽  
Yongbiao Zhao ◽  
Yuan Gao ◽  
Kheng Swee Leck ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Tungsten Oxide ◽  
Interfacial Layer ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting

scholarly journals Solution-Processed NiO as a Hole Injection Layer for Stable Quantum Dot Light-Emitting Diodes

2021 ◽  
Vol 11 (10) ◽  
pp. 4422
Author(s):  
Sangwon Lee ◽  
Youngjin Kim ◽  
Jiwan Kim
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Good Alternative ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Long Term Stability ◽  
Stable Quantum ◽  
Poly Styrene Sulfonate

In this work, we fabricated quantum dot light-emitting diodes using solution-processed NiO as the hole injection layer to replace the commonly used poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS) layer. We successfully prepared NiO films by spin coating the NiO precursor, then annealing them, and then treating them with UV-ozone under optimized conditions. The best device with the NiO film shows higher current efficiency (25.1 cd/A) than that with the PEDOT:PSS layer (22.3 cd/A). Moreover, the long-term stability of the devices with NiO which is annealed at 500 °C is improved substantially. These results suggest that the NiO layer can be a good alternative for developing stable devices.

scholarly journals Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer

2020 ◽  
Vol 69 (1) ◽  
pp. 018101
Author(s):  
Jia-Long Wu ◽  
Yong-Jiang Dou ◽  
Jian-Feng Zhang ◽  
Hao-Ran Wang ◽  
Xu-Yong Yang
Keyword(s):  
Nickel Oxide ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Metal Doped

scholarly journals Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes

Small ◽  
2013 ◽  
Vol 10 (2) ◽  
pp. 247-252 ◽  
Author(s):  
Xuyong Yang ◽  
Evren Mutlugun ◽  
Yongbiao Zhao ◽  
Yuan Gao ◽  
Kheng Swee Leck ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Tungsten Oxide ◽  
Interfacial Layer ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting
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