Design of the Hole-Injection/Hole-Transport Interfaces for Stable Quantum-Dot Light-Emitting Diodes

2020 ◽  
Vol 11 (12) ◽  
pp. 4649-4654 ◽  
Author(s):  
Yuxun Ye ◽  
Xuerong Zheng ◽  
Desui Chen ◽  
Yunzhou Deng ◽  
Dong Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Hole Injection ◽  
Injection Hole ◽  
Light Emitting ◽  
Stable Quantum

scholarly journals Solution-Processed NiO as a Hole Injection Layer for Stable Quantum Dot Light-Emitting Diodes

2021 ◽  
Vol 11 (10) ◽  
pp. 4422
Author(s):  
Sangwon Lee ◽  
Youngjin Kim ◽  
Jiwan Kim
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Good Alternative ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Long Term Stability ◽  
Stable Quantum ◽  
Poly Styrene Sulfonate

In this work, we fabricated quantum dot light-emitting diodes using solution-processed NiO as the hole injection layer to replace the commonly used poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS) layer. We successfully prepared NiO films by spin coating the NiO precursor, then annealing them, and then treating them with UV-ozone under optimized conditions. The best device with the NiO film shows higher current efficiency (25.1 cd/A) than that with the PEDOT:PSS layer (22.3 cd/A). Moreover, the long-term stability of the devices with NiO which is annealed at 500 °C is improved substantially. These results suggest that the NiO layer can be a good alternative for developing stable devices.

scholarly journals Regulation of hole transport layer for perovskite quantum dot light-emitting diodes

2021 ◽  
Vol 245 ◽  
pp. 03021
Author(s):  
Ronghong Zheng ◽  
Dong Huang ◽  
Dongyang Shen ◽  
Chengzhao Luo ◽  
Yu Chen
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Hole Transport Layer ◽  
Emission Layer ◽  
Light Emitting ◽  
Hole Injection Layer

Perovskite quantum dots have been widely used in light-emitting diodes (LEDs) because of their adjustable color, high quantum yield and easy solution processing. Furthermore, matching energy levels of device plays a profound role in the resultant LEDs. In this study, a polymeric material, namely poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4’-(N-(pbutylphenyl))diphenylamine)] (TFB), is introduced between the quantum dot emission layer and the hole injection layer PEDOT:PSS, which not only prevents the fluorescence quenching caused by the direct contact between the perovskite layer and the hole injection layer, but also reduces hole injection barrier, both being beneficial to the device performance. The optimal thickness of TFB has been obtained by adjusting the rotational speed and precursor solution concentration during spin coating. The optimized quantum dots LED has a switching on voltage of about 2.2 V, a maximum brightness of 4300 cd/m2, a maximum external quantum efficiency of 0.15%, and a maximum current density of 0.54 cd/A.

Electroluminescent Quantum Dot Light-Emitting Diodes with ZnO and MoO3 Carrier Transport Layers

2013 ◽  
Vol 677 ◽  
pp. 98-102 ◽  
Author(s):  
Chun Yuan Huang ◽  
Ping Hua Tsai ◽  
Ying Chih Chen ◽  
Hsin Chieh Yu ◽  
Yan Kuin Su
Keyword(s):  
Quantum Dot ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Sol Gel ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Electron Transport Layer ◽  
Device Structure ◽  
Light Emitting

In this article, the quantum dot (QD) light emitting diodes (QDLEDs) with ZnO electron transport layer (ETL) and MoO3hole transport layer (HTL) were demonstrated. The ZnO ETL was fabricated by sol-gel method. To achieve balanced electron and hole injection, hole transport materials including 4,4'-di(N-carbazolyl)biphenyl (CBP) and MoO3were also adapted. The device structure can be simply depicted as indium tin oxide (ITO)/ZnO/Cs2CO3/QD/CBP/MoO3/Au. It was found that the Cs2CO3played an important role to facilitate radiative recombination and reduce the leakage current due to the poor quality of sol-gel fabricated ZnO thin film. Via inserting an annealed Cs2CO3buffer layer with proper thickness, red-emitting QDLEDs with low luminance turn-on voltage of 4.1 V and luminance larger than 100 cd/m2could be obtained. With our demonstration, QDLEDs with ZnO ETL can be a promising device structure for realizing QDLED’s commerizing.

Hole injection of quantum dot light-emitting diodes facilitated by multilayered hole transport layer

2021 ◽  
Vol 558 ◽  
pp. 149944
Author(s):  
Jeong Ha Hwang ◽  
Junmo Kim ◽  
Byong Jae Kim ◽  
Myeongjin Park ◽  
Yong Woo Kwon ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Hole Transport Layer ◽  
Light Emitting
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