Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides

Abstract We provide a comparative study of basic electrical properties of bulk single crystals of transparent semiconducting oxides (TSOs) obtained directly from the melt (9 compounds) and from the gas phase (1 compound), including binary (β-Ga2O3, In2O3, ZnO, SnO2), ternary (ZnSnO3, BaSnO3, MgGa2O4, ZnGa2O4), and quaternary (Zn1−xMgxGa2O4, InGaZnO4) systems. Experimental outcome, covering over 200 samples measured at room temperature, revealed n-type conductivity of all TSOs with free electron concentrations (ne) between 5 × 1015 and 5 × 1020 cm−3 and Hall electron mobilities (μH) up to 240 cm2 V−1 s−1. The widest range of ne values was achieved for β-Ga2O3 and In2O3. The most electrically conducting bulk crystals are InGaZnO4 and ZnSnO3 with ne > 1020 cm−3 and μH > 100 cm2 V−1 s−1. The highest μH values > 200 cm2 V−1 s−1 were measured for SnO2, followed by BaSnO3 and In2O3 single crystals. In2O3, ZnO, ZnSnO3, and InGaZnO4 crystals were always conducting, while others could be turned into electrical insulators. Graphic abstract

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Dimensionally-Controlled Hydrothermal Tm3+-doped Oxidic Nanocrystals and Their Photoluminescence Properties

MRS Proceedings ◽

10.1557/proc-1247-c04-15 ◽

2010 ◽

Vol 1247 ◽

Author(s):

Rocío Calderón-Villajos ◽

Carlos Zaldo ◽

Concepción Cascales

Keyword(s):

Single Crystals ◽

Fluorescence Lifetimes ◽

Photoluminescence Properties ◽

Reaction Conditions ◽

Hydrothermal Processes ◽

Bulk Single Crystals ◽

Template Free ◽

Reaction Media

AbstractControlled reaction conditions in simple, template-free hydrothermal processes yield Tm-Lu2O3 and Tm-GdVO4 nanocrystals with well-defined specific morphologies and sizes. In both oxide families, nanocrystals prepared at pH 7 reaction media exhibit photoluminescence in ∼1.95 μm similar to bulk single crystals. For the lowest Tm3+ concentration (0.2 % mol) in GdVO4 measured 3H4 and 3F4 fluorescence lifetimes τ are very near to τrad.

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Synchrotron White Beam X-Ray Topography Characterization of LGX and SXGS Bulk Single Crystals, Thin Films and Piezoelectric Devices

10.21236/ada470957 ◽

2007 ◽

Author(s):

Michael Dudley

Keyword(s):

Thin Films ◽

Single Crystals ◽

X Ray ◽

White Beam ◽

Bulk Single Crystals ◽

Piezoelectric Devices

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Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab14f9 ◽

2019 ◽

Vol 58 (5) ◽

pp. 050918 ◽

Cited By ~ 3

Author(s):

Takeaki Hamachi ◽

Tetsuya Tohei ◽

Masayuki Imanishi ◽

Yusuke Mori ◽

Akira Sakai

Keyword(s):

Single Crystals ◽

Threading Dislocations ◽

Flux Method ◽

Current Leakage ◽

Local Current ◽

Bulk Single Crystals

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Room-temperature deformation of single crystals of ZrB2 and TiB2 with the hexagonal AlB2 structure investigated by micropillar compression

Scientific Reports ◽

10.1038/s41598-021-93693-9 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Zhenghao Chen ◽

Bhaskar Paul ◽

Sanjib Majumdar ◽

Norihiko L. Okamoto ◽

Kyosuke Kishida ◽

...

Keyword(s):

Single Crystals ◽

Plastic Flow ◽

Room Temperature ◽

Resolve Shear Stress ◽

Temperature Deformation ◽

Slip Systems ◽

Compression Tests ◽

Plastic Deformation Behavior ◽

Bulk Single Crystals ◽

Micropillar Compression

AbstractThe plastic deformation behavior of single crystals of two transition-metal diborides, ZrB2 and TiB2 with the AlB2 structure has been investigated at room temperature as a function of crystal orientation and specimen size by micropillar compression tests. Although plastic flow is not observed at all for their bulk single crystals at room temperature, plastic flow is successfully observed at room temperature by the operation of slip on {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 3> in ZrB2 and by the operation of slip on {1$${\bar{1}}$$ 1 ¯ 00}<0001> and {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 0> in TiB2. Critical resolve shear stress values at room temperature are very high, exceeding 1 GPa for all observed slip systems; 3.01 GPa for {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 3> slip in ZrB2 and 1.72 GPa and 5.17 GPa, respectively for {1$${\bar{1}}$$ 1 ¯ 00}<0001> and {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 0> slip in TiB2. The identified operative slip systems and their CRSS values are discussed in comparison with those identified in the corresponding bulk single crystals at high temperatures and those inferred from micro-hardness anisotropy in the early studies.

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