scholarly journals Experimental Hall electron mobility of bulk single crystals of transparent semiconducting oxides

2021 ◽  
Author(s):  
Zbigniew Galazka ◽  
Klaus Irmscher ◽  
Mike Pietsch ◽  
Steffen Ganschow ◽  
Detlev Schulz ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Gas Phase ◽  
Free Electron ◽  
Room Temperature ◽  
Phase 1 ◽  
Bulk Crystals ◽  
Electrically Conducting ◽  
Semiconducting Oxides ◽  
Bulk Single Crystals

Abstract We provide a comparative study of basic electrical properties of bulk single crystals of transparent semiconducting oxides (TSOs) obtained directly from the melt (9 compounds) and from the gas phase (1 compound), including binary (β-Ga2O3, In2O3, ZnO, SnO2), ternary (ZnSnO3, BaSnO3, MgGa2O4, ZnGa2O4), and quaternary (Zn1−xMgxGa2O4, InGaZnO4) systems. Experimental outcome, covering over 200 samples measured at room temperature, revealed n-type conductivity of all TSOs with free electron concentrations (ne) between 5 × 1015 and 5 × 1020 cm−3 and Hall electron mobilities (μH) up to 240 cm2 V−1 s−1. The widest range of ne values was achieved for β-Ga2O3 and In2O3. The most electrically conducting bulk crystals are InGaZnO4 and ZnSnO3 with ne > 1020 cm−3 and μH > 100 cm2 V−1 s−1. The highest μH values > 200 cm2 V−1 s−1 were measured for SnO2, followed by BaSnO3 and In2O3 single crystals. In2O3, ZnO, ZnSnO3, and InGaZnO4 crystals were always conducting, while others could be turned into electrical insulators. Graphic abstract

scholarly journals Room-temperature deformation of single crystals of ZrB2 and TiB2 with the hexagonal AlB2 structure investigated by micropillar compression

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zhenghao Chen ◽  
Bhaskar Paul ◽  
Sanjib Majumdar ◽  
Norihiko L. Okamoto ◽  
Kyosuke Kishida ◽  
...  
Keyword(s):  
Single Crystals ◽  
Plastic Flow ◽  
Room Temperature ◽  
Resolve Shear Stress ◽  
Temperature Deformation ◽  
Slip Systems ◽  
Compression Tests ◽  
Plastic Deformation Behavior ◽  
Bulk Single Crystals ◽  
Micropillar Compression

AbstractThe plastic deformation behavior of single crystals of two transition-metal diborides, ZrB2 and TiB2 with the AlB2 structure has been investigated at room temperature as a function of crystal orientation and specimen size by micropillar compression tests. Although plastic flow is not observed at all for their bulk single crystals at room temperature, plastic flow is successfully observed at room temperature by the operation of slip on {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 3> in ZrB2 and by the operation of slip on {1$${\bar{1}}$$ 1 ¯ 00}<0001> and {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 0> in TiB2. Critical resolve shear stress values at room temperature are very high, exceeding 1 GPa for all observed slip systems; 3.01 GPa for {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 3> slip in ZrB2 and 1.72 GPa and 5.17 GPa, respectively for {1$${\bar{1}}$$ 1 ¯ 00}<0001> and {1$${\bar{1}}$$ 1 ¯ 00}<11$${\bar{2}}$$ 2 ¯ 0> slip in TiB2. The identified operative slip systems and their CRSS values are discussed in comparison with those identified in the corresponding bulk single crystals at high temperatures and those inferred from micro-hardness anisotropy in the early studies.

Structure Characteristics of Cubic and Orthorhombic Phases of High Density Scintillator Pbf2 from 4.2–300 K

1994 ◽  
Vol 348 ◽  
Author(s):  
Ivan Shmyt'ko ◽  
I.B. Savchenko ◽  
N.V. Klassen ◽  
B.Sh. Bagautdinov ◽  
G.A. Emel'chenko ◽  
...  
Keyword(s):  
Phase Transition ◽  
Plastic Deformation ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
Cell Parameter ◽  
Structure Characteristics ◽  
Pseudocubic Phase ◽  
Bulk Single Crystals ◽  
Structural Aspects

ABSTRACTAn anomaly of the temperature dependence of the unit cell parameter has been observed for β–PbF2 single crystals at 200 K that is interpreted as a phase transition to a pseudocubic lattice. Such a pseudocubic phase is observable at room temperature after uniaxial plastic deformation of the bulk single crystals. The structural aspects of the β→α transition have been established. The as-grown crystals of α–PbF2 phase are shown to undergo a phase transition at 100 K.

Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides

2021 ◽  
Vol 67 (1) ◽  
pp. 100511
Author(s):  
Zbigniew Galazka ◽  
Steffen Ganschow ◽  
Klaus Irmscher ◽  
Detlef Klimm ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Single Crystals ◽  
Wide Bandgap ◽  
Semiconducting Oxides ◽  
Bulk Single Crystals

Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing

2001 ◽  
Vol 89 (12) ◽  
pp. 7960-7965 ◽  
Author(s):  
E. Litwin-Staszewska ◽  
T. Suski ◽  
R. Piotrzkowski ◽  
I. Grzegory ◽  
M. Bockowski ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electrical Properties ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Bulk Single Crystals

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside

2009 ◽  
Vol 615-617 ◽  
pp. 19-22 ◽  
Author(s):  
Katarzyna Racka ◽  
Emil Tymicki ◽  
Marcin Raczkiewicz ◽  
Krzysztof Grasza ◽  
Michal Kozubal ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Room Temperature ◽  
Experimental Methods ◽  
Room Temperature Resistivity ◽  
P Type ◽  
Source Materials ◽  
Type Crystal ◽  
Temperature Resistivity

n- and p-type 6H-SiC single crystals grown by PVT method using different charge materials – poly-SiC sinter or fresh SiC powder – have been studied. An open or closed seed backside during the growth processes have been applied. In the former, a distinct decrease backside etching of the seed was observed. Crystals have been extensively characterized with respect to their purity, quality and electrical properties using complex experimental methods. For the n-type boule an axially and radially homogeneous resistivity ~0.11 cm at 300 K was observed. Electrical properties of the p-type crystal, i.e., high room-temperature resistivity of 239 cm, were affected by compensation effects between residual donors (nitrogen and oxygen) and acceptors (mainly boron).

scholarly journals Electrical Properties and Crystal Perfection of the n-Type Si-rich SiGe Alloys Bulk Single-Crystals

2015 ◽  
Vol 3 (2) ◽  
Author(s):  
Elza Khutsishvili ◽  
Nunu Khutsishvili ◽  
Bela Kvirkvelia ◽  
George Kekelidze ◽  
Lali Nadiradze ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Crystal Perfection ◽  
Bulk Single Crystals

The Expansion upon Cooling of Thick Cu2O Films Grown on Copper Substrates

1966 ◽  
Vol 10 ◽  
pp. 234-239 ◽  
Author(s):  
T. F. Swank ◽  
K. R. Lawless
Keyword(s):  
Oxide Film ◽  
Single Crystals ◽  
Room Temperature ◽  
Anomalous Behavior ◽  
Temperature Changes ◽  
Bulk Single Crystals ◽  
Cu2o Films ◽  
Diffusion Rates ◽  
Copper Single Crystals ◽  
And Diffusion

AbstractDuring the course of catalytic experiments on bulk copper single crystals, several crystals were intentionally oxidized to form thick (6000 Å) Cu2O films on the copper substrates. These oxidized crystals were investigated by means of a high temperature chamber installed on a General Electric XRD-5 X-ray diffractometer. It was discovered subsequently that the lattice spacings of the Cu2O decreased upon heating and increased upon cooling. Bulk single crystals and polycrystals of copper were oxidized at 3 Torr of air for several hours. All of the oxidized crystals were examined with copper and chromium radiation and both showed similar results. Typical of the results was an oxidized (110) copper disc which showed a net contraction upon heating of 1% for the (110) Cu2O planes. This slightly oriented Cu2O film was distinguished because -it contracted on heating to 440°C from room temperature, then expanded from 440°-540°C, and then expanded again when cooled from 540°C to room temperature. CuO also was detected in the diffraction pattern and the CuO and copper spacings were behaving normally with the temperature changes. A polycrystal of Cu2O was'examined and that, of course, also acted normally as its temperature was varied. Borie and co-workers have reported and explained very nicely similar anomalous behavior for thinner (500 Å) (110) oriented Cu2O films grown on (110) copper substrates. They showed that the epitaxial forces would cause an oxide film grown at high temperatures to contract parallel to the metal interface and expand normal to the interface as the copper cools and contracts. The oxide would expand normal to the surface in. order to keep its unit cell volume constant.It is felt that epitaxial forces are not causing the anomalous behavior in the present work mainly because the 6000 Å of Cu2O is too thick for epitaxy to exert a meaningful force. The oxide film on the (110) copper was slightly (110) oriented but all of the Cu2O reflections behaved similarly. An additional reason to discount epitaxy is that this Cu2O film expanded upon heating from 440°-540°C. For these thick oxide films epitaxial forces do not seem to be the controlling factor; therefore, a point defect mechanism must be the cause. Changing oxidation and diffusion rates with temperature would produce various vacancy concentrations in the oxide layer and cause the spacings to vary.

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