Analysis of photoluminescence spectra for detection of stress-induced defects in silicon substrates after the polycrystalline diamond film deposition

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4616-4618
Author(s):  
Victor S. Bagaev ◽  
Denis F. Aminev ◽  
Tatiana I. Galkina ◽  
Andrey Yu. Klokov ◽  
Vladimir S. Krivobok ◽  
...  
Keyword(s):  
Diamond Film ◽  
Polycrystalline Diamond ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Photoluminescence Spectra ◽  
Detection Of Stress ◽  
Induced Defects ◽  
Polycrystalline Diamond Film

Fracture observation of polycrystalline diamond film under indentation test

2004 ◽  
Vol 13 (11-12) ◽  
pp. 2024-2030 ◽  
Author(s):  
R. Ikeda ◽  
M. Hayashi ◽  
A. Yonezu ◽  
T. Ogawa ◽  
M. Takemoto
Keyword(s):  
Diamond Film ◽  
Indentation Test ◽  
Polycrystalline Diamond ◽  
Polycrystalline Diamond Film

Growth of (100) oriented diamond grains by the application of lateral temperature gradients across silicon substrates

2004 ◽  
Vol 19 (11) ◽  
pp. 3206-3213 ◽  
Author(s):  
E. Titus ◽  
D.S. Misra ◽  
Manoj. K. Singh ◽  
Pawan. K. Tyagi ◽  
Abha Misra ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Film Deposition ◽  
Temperature Gradients ◽  
Diamond Surface ◽  
Silicon Substrates ◽  
Oriented Growth ◽  
Oriented Samples ◽  
Diamond Grain

Polycrystalline diamond films with a predominant (100) texture were deposited onto silicon substrates using hot-filament chemical vapor deposition. During film deposition, different temperature gradients were created and imposed laterally across the substrate materials. Films grown under a gradient of 100 °C cm−1 displayed large (100) oriented grains. No crystallite (100) orientation was observed in the as-grown films prepared without a temperature gradient. It was observed that the diamond grain size varied as a function of the gradient. The lower gradient resulted in smaller grains and vice versa. Furthermore, the size of the grains was a function of the deposition time. The orientation of the diamond grains changed gradually across the substrate from (100) to (110) orientation as we scanned from the high-temperature to the low-temperature zone. The films were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy. XRD showed strong (400) reflections in the oriented samples. SEM results indicated the presence of smooth diamond surfaces consisting of predominantly (100) oriented platelets. As the (100) oriented diamond grains were grown on top of the (100) oriented silicon substrates, the faces were mostly aligned parallel to the substrate surface resulting in the deposition of a smooth diamond surface. AFM observations revealed the presence of steps located at the boundaries of the oriented grains. FTIR results showed the characteristic difference in hydrogen bonding in the oriented samples and gave useful information about mechanisms responsible for the orientation. Quantitative analysis was carried out to measure the H content in the films, and it was found that the oriented films contained less hydrogen. Our findings suggest that high saturation of carbon and a concentration gradient of sp3 CH2 species can be the key factor in the oriented growth of (100) diamond grains.

High Resolution Tem Study of Diamond Formation on Silicon and Molybdenum Field Emitter Surfaces

1994 ◽  
Vol 354 ◽  
Author(s):  
A. F. Myers ◽  
J. Liu ◽  
W. B. Choi ◽  
G. J. Wojak ◽  
J. J. Hren
Keyword(s):  
High Resolution ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emitters ◽  
High Resolution Tem ◽  
Diffraction Patterns ◽  
Polycrystalline Diamond Film

AbstractDiamond is an attractive material for coating microfabricated metal and semiconductor field emitters, since it enhances the stability and emission characteristics of the emitter. In the present study, polycrystalline diamond thin films were grown on silicon and molybdenum field emitters by microwave plasma chemical vapor deposition, using the bias-enhanced nucleation technique. High resolution transmission electron microscopy (TEM) was used to analyze the morphology of the diamond film and the structure of the diamond/emitter interface. Electron diffraction patterns and high resolution images indicate the presence of a polycrystalline diamond film, as well as a polycrystalline SiC layer between the diamond film and the Si emitter. A carbide interlayer was also found to exist between the diamond and the Mo emitter surface. Parallel electron energy loss spectroscopy confirms the TEM identification of a polycrystalline diamond film.

The Characteristics of Diamond Film Deposited by Magnet-Enhanced Plasma Jet CVD

1996 ◽  
Author(s):  
K. Zhou ◽  
M. Dair ◽  
D. Wang ◽  
P. Han ◽  
B. Feng
Keyword(s):  
Magnetic Field ◽  
Diamond Film ◽  
Polycrystalline Diamond ◽  
Plasma Jet ◽  
Magnetic Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Perfection ◽  
Polycrystalline Diamond Film ◽  
Scanning Electron

Abstract A diameter of 30 mm polycrystalline diamond film has been deposited by magnet-enhanced DC plasma jet CVD. The diamond film was characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and surface profilograph. Results reveal that under the same depositing parameters, magnetic field can increase purity of diamond film, improve thickness uniformity of diamond film, but no influence on crystal perfection and size of microcrystal of diamond film. A discussion on magnetic effect is presented.

Sensitive Elements of High Temperature Pressure Sensors Formed from a Doped Polycrystalline Diamond

2021 ◽  
Vol 1031 ◽  
pp. 178-183
Author(s):  
Elena Vysotina ◽  
Razhudin Rizakhanov ◽  
Sergey Sigalaev ◽  
Nikolay Polushin ◽  
Vadim Shokorov ◽  
...  
Keyword(s):  
High Temperature ◽  
Diamond Film ◽  
Pressure Sensors ◽  
Polycrystalline Diamond ◽  
Resistance Strain ◽  
Promising Material ◽  
Strain Gauges ◽  
Extreme Conditions ◽  
Boron Doped ◽  
Polycrystalline Diamond Film

The need to create highly accurate pressure sensors that capable operate under extreme conditions in aviation, rocket and space equipment increases and becomes more relevant. The unique properties of diamond make it a promising material for microelectronic sensors. Sensitive elements of pressure sensors were developed where a resilient element is formed from silicon but resistance strain gauges are formed from a boron-doped polycrystalline diamond film.

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