Simulation of a perfect CVD diamond Schottky diode steep forward current–voltage characteristic

ABSTRACTWe have studied the crystallinity and Schottky diode characteristics of GaAs/Si grown by MOCVD. In comparison with two-step growth and GaP/strained layer superlattice techniques, the crystallinity and the Schottky diode characteristics are superior for the GaAs/Si with Al0.5Ga0.5P as an intermediate layer. The GaAs/Si grown with the Al0.5Ga0.5 intermediate layer shows mirror—like surface morphology and an X-ray FMHM of 188 arcs. The ideality factor of the Schottky diode fabricated on the GaAs/Si grown with the Al0.5Ga0.5P intermediate layer is 1.06, but its forward current-voltage characteristic shows a significant leakage current at small forward bias. It is also found that the composition of Al affects strongly the crystallinity and the Schottky characteristics of GaAs/Si.

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Contact Effect on the Current–Voltage Characteristic of Graphene Nanoribbon Based Schottky Diode

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2015.3756 ◽

2015 ◽

Vol 12 (3) ◽

pp. 478-483 ◽

Cited By ~ 2

Author(s):

Wong King Kiat ◽

Razali Ismail ◽

M. Taghi Ahmadi

Keyword(s):

Schottky Diode ◽

Graphene Nanoribbon ◽

Voltage Characteristic ◽

Current Voltage Characteristic ◽

Contact Effect ◽

Current Voltage

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PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

Fluctuation and Noise Letters ◽

10.1142/s0219477514500035 ◽

2014 ◽

Vol 13 (01) ◽

pp. 1450003 ◽

Cited By ~ 6

Author(s):

ALEXEY V. KLYUEV ◽

EVGENY I. SHMELEV ◽

ARKADY V. YAKIMOV

Keyword(s):

Experimental Data ◽

Schottky Diode ◽

Series Resistance ◽

Schottky Diodes ◽

Voltage Characteristic ◽

Schottky Junction ◽

Current Voltage Characteristic ◽

Impurity Atoms ◽

Current Voltage

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current–voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs – model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1–10 special impurity atoms with stochastically modulated ionization energy.

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The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

Journal of Nanomaterials ◽

10.1155/2013/636239 ◽

2013 ◽

Vol 2013 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Meisam Rahmani ◽

Razali Ismail ◽

Mohammad Taghi Ahmadi ◽

Mohammad Javad Kiani ◽

Mehdi Saeidmanesh ◽

...

Keyword(s):

Schottky Barrier ◽

Bilayer Graphene ◽

Graphene Nanoribbon ◽

Voltage Characteristic ◽

Schottky Barrier Diode ◽

Current Voltage Characteristic ◽

Turn On ◽

Forward Current ◽

Current Voltage ◽

Bilayer Graphene Nanoribbon

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

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Electronic properties of (NH4)2S passivated InP(100) surfaces

Canadian Journal of Physics ◽

10.1139/p92-167 ◽

1992 ◽

Vol 70 (10-11) ◽

pp. 1039-1042 ◽

Cited By ~ 2

Author(s):

Y. Tao ◽

A. Yelon ◽

R. Leonelli

Keyword(s):

Electronic Properties ◽

Schottky Diode ◽

Voltage Characteristic ◽

Band Edge ◽

Photoluminescence Intensity ◽

Thermally Stable ◽

Current Voltage Characteristic ◽

Current Voltage ◽

Diode Current

We have recently presented a method that yields chemically and thermally stable S-passivated InP(100) – (1 × 1) surfaces. Here we characterize the surface electronic properties using two techniques: band edge and exciton photoluminescence intensity and Schottky diode current–voltage characteristic measurements. We compare etched and S-treated samples, both in the as-prepared condition and after annealing. These measurements show that the S-treated surfaces have better properties than the etched ones. In particular, photoluminescence intensities are improved by a factor of two to four.

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Влияние одноосной упругой деформации на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si<Mn>-Au

Физика и техника полупроводников ◽

10.21883/ftp.2020.05.49263.9303 ◽

2020 ◽

Vol 54 (5) ◽

pp. 466

Author(s):

О.О. Маматкаримов ◽

О. Химматкулов ◽

И.Г. Турсунов

Keyword(s):

Uniaxial Compression ◽

Applied Voltage ◽

Reverse Current ◽

Voltage Characteristic ◽

Surface Barrier ◽

Current Voltage Characteristic ◽

Current Sensitivity ◽

Forward Current ◽

Internal Gain ◽

Current Voltage

Abstract The effect of uniaxial elastic deformation on the current–voltage characteristic of surface–barrier Sb– p -Si〈Mn〉–Au diodes is studied. It is shown that reverse-current sensitivity to uniaxial compression exceeds the forward-current sensitivity at identical applied voltages. An increase in the forward current of these structures during deformation is caused by internal gain associated with redistribution of the applied voltage between the base and barrier.

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