Correlation Between Crystallinity and Schottky Diode Characteristics of GaAs Grown on Siby MOCVD

1989 ◽  
Vol 148 ◽  
Author(s):  
T. Egawa ◽  
S. Nozaki ◽  
N. Noto ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Intermediate Layer ◽  
Forward Bias ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Strained Layer Superlattice ◽  
Step Growth

ABSTRACTWe have studied the crystallinity and Schottky diode characteristics of GaAs/Si grown by MOCVD. In comparison with two-step growth and GaP/strained layer superlattice techniques, the crystallinity and the Schottky diode characteristics are superior for the GaAs/Si with Al0.5Ga0.5P as an intermediate layer. The GaAs/Si grown with the Al0.5Ga0.5 intermediate layer shows mirror—like surface morphology and an X-ray FMHM of 188 arcs. The ideality factor of the Schottky diode fabricated on the GaAs/Si grown with the Al0.5Ga0.5P intermediate layer is 1.06, but its forward current-voltage characteristic shows a significant leakage current at small forward bias. It is also found that the composition of Al affects strongly the crystallinity and the Schottky characteristics of GaAs/Si.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

Effect of Sintering Temperature on Microstructure and Electrical Properties of Nanozinc Oxide Varistor

2011 ◽  
Vol 495 ◽  
pp. 190-193 ◽  
Author(s):  
Mehdi Mirzayi ◽  
Mohammad Hoseen Hekmatshoar ◽  
Abdolazim Azimi
Keyword(s):  
Electrical Properties ◽  
Sintering Temperature ◽  
Voltage Characteristic ◽  
X Ray Diffraction ◽  
Current Voltage Characteristic ◽  
X Ray ◽  
Current Voltage ◽  
Polyacrylamide Gel Method ◽  
Zno Powder ◽  
Scanning Electron

Nanometer-sized ZnO powder was synthesized at low decomposing temperature by polyacrylamide-gel method where Acrylamide was used as monomer, and N,N-methylene-bisacrylamide as lattice reagent. The characteristic of powders were studied by X-ray diffraction and scanning electron microscope (SEM). The results indicated uniform distribution of nanoZnO particles. Also electrical properties were investigated at different sintering temperatures of 800, 900 and 1000 ° C. It was observed that increase in sintering temperature, resulted in increase in the grain size of the varistor ceramics. The observed nonlinearity in current – voltage characteristic was explained by the existence of potential barrier at the grain boundaries and lowering of the barriers.

PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

2014 ◽  
Vol 13 (01) ◽  
pp. 1450003 ◽  
Author(s):  
ALEXEY V. KLYUEV ◽  
EVGENY I. SHMELEV ◽  
ARKADY V. YAKIMOV
Keyword(s):  
Experimental Data ◽  
Schottky Diode ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Voltage Characteristic ◽  
Schottky Junction ◽  
Current Voltage Characteristic ◽  
Impurity Atoms ◽  
Current Voltage

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current–voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs – model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1–10 special impurity atoms with stochastically modulated ionization energy.

scholarly journals The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Meisam Rahmani ◽  
Razali Ismail ◽  
Mohammad Taghi Ahmadi ◽  
Mohammad Javad Kiani ◽  
Mehdi Saeidmanesh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Voltage Characteristic ◽  
Schottky Barrier Diode ◽  
Current Voltage Characteristic ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Bilayer Graphene Nanoribbon

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

scholarly journals Transport properties of the lateral multilayer/monolayer PtSe2 diode

2021 ◽  
Author(s):  
F. zandvakili ◽  
M. Berahman
Keyword(s):  
Density Functional Theory ◽  
Green Function ◽  
Density Functional ◽  
Reverse Bias ◽  
Forward Bias ◽  
Voltage Characteristic ◽  
Density Of State ◽  
Current Voltage Characteristic ◽  
Functional Theory ◽  
Current Voltage

Abstract A heterostructure of trilayer/monolayer platinum diselenide has been introduced and further studied. Applying the non-equilibrium green function tuned with density functional theory, it has been shown that such a junction forms a diode structure. The current voltage characteristic shows proper diode characteristics in nanoscale. Using the transmission spectrum and projected density of state, we have demonstrated that in forward bias, the conduction band and the valence band are aligned. Therefore, the possibility of tunneling enhances and this leads to the increase of current while in reverse bias such a possibility does not exist. We have also investigated the atoms of the junction and have identified the effective ones in the transmission.

Electronic properties of (NH4)2S passivated InP(100) surfaces

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1039-1042 ◽  
Author(s):  
Y. Tao ◽  
A. Yelon ◽  
R. Leonelli
Keyword(s):  
Electronic Properties ◽  
Schottky Diode ◽  
Voltage Characteristic ◽  
Band Edge ◽  
Photoluminescence Intensity ◽  
Thermally Stable ◽  
Current Voltage Characteristic ◽  
Current Voltage ◽  
Diode Current

We have recently presented a method that yields chemically and thermally stable S-passivated InP(100) – (1 × 1) surfaces. Here we characterize the surface electronic properties using two techniques: band edge and exciton photoluminescence intensity and Schottky diode current–voltage characteristic measurements. We compare etched and S-treated samples, both in the as-prepared condition and after annealing. These measurements show that the S-treated surfaces have better properties than the etched ones. In particular, photoluminescence intensities are improved by a factor of two to four.

scholarly journals Влияние одноосной упругой деформации на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si<Mn>-Au

2020 ◽  
Vol 54 (5) ◽  
pp. 466
Author(s):  
О.О. Маматкаримов ◽  
О. Химматкулов ◽  
И.Г. Турсунов
Keyword(s):  
Uniaxial Compression ◽  
Applied Voltage ◽  
Reverse Current ◽  
Voltage Characteristic ◽  
Surface Barrier ◽  
Current Voltage Characteristic ◽  
Current Sensitivity ◽  
Forward Current ◽  
Internal Gain ◽  
Current Voltage

Abstract The effect of uniaxial elastic deformation on the current–voltage characteristic of surface–barrier Sb– p -Si〈Mn〉–Au diodes is studied. It is shown that reverse-current sensitivity to uniaxial compression exceeds the forward-current sensitivity at identical applied voltages. An increase in the forward current of these structures during deformation is caused by internal gain associated with redistribution of the applied voltage between the base and barrier.

Concentration Effects on n-GaN Schottky Diode Current-Voltage (i-v) Characteristics

2006 ◽  
Vol 517 ◽  
pp. 159-164
Author(s):  
Tarriq Munir ◽  
Azlan Abdul Aziz ◽  
Mat Johar Abdullah ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Linear Relationship ◽  
Carrier Concentration ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Schottky Diode ◽  
Forward Bias ◽  
Concentration Effects ◽  
Reverse Leakage Current ◽  
Forward Current ◽  
Current Voltage

We focus on the epi layer carrier concentration variation effects to improve the current – voltage (I-V) characteristics of an n-GaN schottky diode. The carrier concentration of 1×10 15cm-3, 1×1016 cm−3, 1×1017 cm−3 were employed. The simulated current was obtained by forward biasing the device of up to 2Volt at room temperature using Pt electrode. The study was conducted by using Atlas/Blaze using various models such as Consrh (Concentration Dependent Shockley Read Hall), Cvt (Lombardi Model), Fermi (Fermi Dirac), Bgn (Bandgap Narrowing), Conmob (Concentration Dependent Mobility), Auger (Auger). We found that as the concentration increases the value of forward current also increase linearly when biased at maximum of 2 volts. The reverse bias characteristics at the same concentration of the simulated diode up to 100Volt were also determined. We found that at low carrier concentration the reverse leakage current is minimum and breakdown voltage is maximum. As the carrier concentration increases there is a linear relationship between reverse leakage current and epi layer doping carrier concentration. By analyzing the forward and reverse characteristics we conclude that in forward bias for low carrier concentration the diode shows schottky rectifying behavior while for higher carrier concentration the diode shows ohmic behavior. For higher carrier concentration there is a linear relationship between carrier concentration (n) and forward current. The reverse leakage current is minimum approaching an ideal value at n≤1×1015cm-3 and breakdown voltage is maximum at these values of concentration. Increasing the concentration from n≤1×1015cm-3 the value of reverse leakage current is approaching to the maximum value as a result breakdown voltage decreases. We conclude that for n-GaN schottky diode the ideal schottky rectifying behavior of I-V characteristics is obtained at carrier concentration of n≤ 1×1015cm-3 for the simulated diodes at different carrier concentration.

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