Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage

2021 ◽  
pp. 413555
Author(s):  
Najla S. Al-Shameri ◽  
Hassen Dakhlaoui
Keyword(s):  
Numerical Investigation ◽  
Bias Voltage ◽  
Current Density ◽  
Quantum Tunneling ◽  
Spin Current ◽  
Tunneling Time ◽  
Applied Bias ◽  
Applied Bias Voltage

scholarly journals Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Tribological Properties ◽  
Structure And Properties ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Methane Mixture ◽  
Composition Structure

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.

scholarly journals Laser-Induced Growth of Titanium Nitride Microcolumns on Biased Titanium Targets

2005 ◽  
Vol 20 (1) ◽  
pp. 62-67 ◽  
Author(s):  
E. György ◽  
A. Pérez del Pino ◽  
P. Serra ◽  
J.L. Morenza
Keyword(s):  
Bias Voltage ◽  
Single Pulse ◽  
Laser Pulses ◽  
High Repetition Rate ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Surface Microrelief ◽  
High Repetition ◽  
Melting Threshold ◽  
Biased Samples

Titanium targets with a bias voltage ranging from −500 to +500 V were submitted to multipulse high repetition rate Nd:yttrium aluminum garnet (YAG; λ = 1.064 μm, τ ∼ 300 ns, ν = 30 kHz) laser irradiations in nitrogen at intensity values below the single-pulse melting threshold. The morphology of the TiN structures formed under the cumulative action of the laser pulses on the surface of the unbiased and biased targets was investigated by profilometry and scanning electron microscopy. Under these irradiation conditions, a specific columnar surface microrelief developed. The height of the microcolumns reached about 10–15 μm, and their diameter about 1–2 μm. The development of TiN microcolumns was enhanced by the applied bias voltage. The enhancement in the negative biased samples was stronger than that in the positive biased ones.

scholarly journals Simulation of a Complete Chain of QCA Cells with Realistic Potentials

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 149-153
Author(s):  
M. Girlanda ◽  
M. Macucci
Keyword(s):  
Numerical Simulation ◽  
Bias Voltage ◽  
Polarization State ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Voltage Unbalance ◽  
Complete Chain ◽  
A Chain ◽  
Realistic Potentials

We present a numerical simulation of the operation of a chain of 3 Quantum Cellular Automanton (QCA) cells, with the inclusion of a realistic procedure to enforce, with an externally applied bias voltage unbalance, the polarization of the first cell. The polarization state is shown to propagate correctly, as long as the bias unbalance applied to the electrodes of the first cell is not so large as to directly perturb nearby cells. The addition of dummy cells is needed to balance the asymmetries existing at the ends of a chain: this is an indication of further difficulties, that may become relevant if fabrication of more complex arrays is attempted.

Effects of applied bias voltage on the properties of a-C:H films

1996 ◽  
Vol 78 (1-3) ◽  
pp. 31-36 ◽  
Author(s):  
Yin Dachuan ◽  
Xu Niankan ◽  
Liu Zhengtang ◽  
Han Yong ◽  
Zheng Xiulin
Keyword(s):  
Bias Voltage ◽  
Applied Bias ◽  
Applied Bias Voltage

Control of the Orientation of Photosynthetic Reaction Center Proteins Using an Applied Bias-Voltage Langmuir-Blodgett Technique

1997 ◽  
Vol 36 (Part 2, No. 5A) ◽  
pp. L577-L579 ◽  
Author(s):  
Yoshiaki Yasuda ◽  
Masayuki Hara ◽  
Jun Miyake ◽  
Hideki Toyotama
Keyword(s):  
Reaction Center ◽  
Bias Voltage ◽  
Photosynthetic Reaction Center ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Langmuir Blodgett
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