Using critical coupling to achieve monolayer graphene perfect absorber with high-sensitivity and polarization-independence

Author(s):  
Chunlian Cen ◽  
Yijun Tang ◽  
Yao Luo ◽  
Ying Zheng ◽  
Jianguo Zhang ◽  
...  
2021 ◽  
Vol 111 ◽  
pp. 108227
Author(s):  
Liying Jiang ◽  
Chuang Yuan ◽  
Zhiyou Li ◽  
Ju Su ◽  
Zao Yi ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 95 ◽  
Author(s):  
Chunlian Cen ◽  
Zeqiang Chen ◽  
Danyang Xu ◽  
Liying Jiang ◽  
Xifang Chen ◽  
...  

By means of critical coupling and impedance matching theory, we have numerically simulated the perfect absorption of monolayer graphene. Through the critical coupling effect and impedance matching, we studied a perfect single-band absorption of the monolayer graphene and obtained high quality factor (Q-factor = 664.2) absorption spectrum which has an absorbance close to 100% in the near infrared region. The position of the absorption spectrum can be adjusted by changing the ratio between the radii of the elliptic cylinder air hole and the structural period. The sensitivity of the absorber can be achieved S = 342.7 nm/RIU (RIU is the per refractive index unit) and FOM = 199.2 (FOM is the figure of merit), which has great potential for development on biosensors. We believe that our research will have good application prospects in graphene photonic devices and optoelectronic devices.


Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 641
Author(s):  
Yuan Zhai ◽  
Yi Xiang ◽  
Weiqing Yuan ◽  
Gang Chen ◽  
Jinliang Shi ◽  
...  

High sensitivity detection of terahertz waves can be achieved with a graphene nanomesh as grating to improve the coupling efficiency of the incident terahertz waves and using a graphene nanostructure energy gap to enhance the excitation of plasmon. Herein, the fabrication process of the FET THz detector based on the rectangular GNM (r-GNM) is designed, and the THz detector is developed, including the CVD growth and the wet-process transfer of high quality monolayer graphene films, preparation of r-GNM by electron-beam lithography and oxygen plasma etching, and the fabrication of the gate electrodes on the Si3N4 dielectric layer. The problem that the conductive metal is easy to peel off during the fabrication process of the GNM THz device is mainly discussed. The photoelectric performance of the detector was tested at room temperature. The experimental results show that the sensitivity of the detector is 2.5 A/W (@ 3 THz) at room temperature.


2020 ◽  
Vol 18 ◽  
pp. 103306 ◽  
Author(s):  
Rujiao Ke ◽  
Wen Liu ◽  
Jinping Tian ◽  
Rongcao Yang ◽  
Weihua Pei

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 493 ◽  
Author(s):  
Yuan-Fong Chou Chau ◽  
Chung-Ting Chou Chao ◽  
Hung Ji Huang ◽  
Muhammad Raziq Rahimi Kooh ◽  
N. T. R. N. Kumara ◽  
...  

Plasmonic effect using a cross-hair can convey strongly localized surface plasmon modes among the separated composite nanostructures. Compared to its counterpart without the cross-hair, this characteristic has the remarkable merit of enhancing absorptance at resonance and can make the structure carry out a dual-band plasmonic perfect absorber (PPA). In this paper, we propose and design a novel dual-band PPA with a gathering of four metal-shell nanorods using a cross-hair operating at visible and near-infrared regions. Two absorptance peaks at 1050 nm and 750 nm with maximal absorptance of 99.59% and 99.89% for modes 1 and 2, respectively, are detected. High sensitivity of 1200 nm refractive unit (1/RIU), figure of merit of 26.67 and Q factor of 23.33 are acquired, which are very remarkable compared with the other PPAs. In addition, the absorptance in mode 1 is about nine times compared to its counterpart without the cross-hair. The proposed structure gives a novel inspiration for the design of a tunable dual-band PPA, which can be exploited for plasmonic sensor and other nanophotonic devices.


2014 ◽  
Vol 105 (18) ◽  
pp. 181105 ◽  
Author(s):  
Yonghao Liu ◽  
Arvinder Chadha ◽  
Deyin Zhao ◽  
Jessica R. Piper ◽  
Yichen Jia ◽  
...  

2015 ◽  
Vol 63 (2) ◽  
pp. 177-183 ◽  
Author(s):  
Xiaoyuan Lu ◽  
Rengang Wan ◽  
Feng Liu ◽  
Tongyi Zhang

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