Glass transition temperature of a polymer thin film: Statistical and fitting uncertainties

The glass transition temperaure Tg of amorphous polymer thin film was investigated. The opposite experimental results, the increase or decrease in Tg of thin film with decreasing film thickness, were found. It was believed that the free surface near the polymer-air interface has a smaller chain ends density, leading to the decrease in Tg; while the polymer-substrate interface has a larger chain ends density, resulting in the increase in Tg. However, there are a competition between the both, and the interaction of polymer and substrate is a dominant factor to affect Tg of thin film. In addition, the multilayer model of thin film was proposed to explain the effect of the free surface and the interface on the Tg of thin film.

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Dependence of shear yield strain and shear transformation zone on the glass transition temperature in thin film metallic glasses

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2015.08.217 ◽

2015 ◽

Vol 652 ◽

pp. 191-199 ◽

Cited By ~ 8

Author(s):

X. Qian ◽

Q.P. Cao ◽

S.Y. Liu ◽

C. Wang ◽

X.D. Wang ◽

...

Keyword(s):

Thin Film ◽

Glass Transition ◽

Transition Temperature ◽

Glass Transition Temperature ◽

Metallic Glasses ◽

Yield Strain ◽

Transformation Zone ◽

Shear Yield ◽

Shear Transformation ◽

Shear Transformation Zone

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Silk Polymer Coating with Low Dielectric Constant and High Thermal Stability for Ulsi Interlayer Dielectric

MRS Proceedings ◽

10.1557/proc-476-9 ◽

1997 ◽

Vol 476 ◽

Cited By ~ 46

Author(s):

P. H. Townsend ◽

S. J. Martin ◽

J. Godschalx ◽

D. R. Romer ◽

D. W. Smith ◽

...

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Glass Transition ◽

Transition Temperature ◽

Glass Transition Temperature ◽

Integrated Circuits ◽

Room Temperature ◽

Polymer Network ◽

Flow Characteristics ◽

Interlayer Dielectric

AbstractA novel polymer has been developed for use as a thin film dielectric in the interconnect structure of high density integrated circuits. The coating is applied to the substrate as an oligomeric solution, SiLK*, using conventional spin coating equipment and produces highly uniform films after curing at 400 °C to 450 °C. The oligomeric solution, with a viscosity of ca. 30 cPs, is readily handled on standard thin film coating equipment. Polymerization does not require a catalyst. There is no water evolved during the polymerization. The resulting polymer network is an aromatic hydrocarbon with an isotropie structure and contains no fluorine.The properties of the cured films are designed to permit integration with current ILD processes. In particular, the rate of weight-loss during isothermal exposures at 450 °C is ca. 0.7 wt.%/hour. The dielectric constant of cured SiLK has been measured at 2.65. The refractive index in both the in-plane and out-of-plane directions is 1.63. The flow characteristics of SiLK lead to broad topographic planarization and permit the filling of gaps at least as narrow as 0.1 μm. The glass transition temperature for the fully cured film is greater than 490 °C. The coefficient of thermal expansivity is 66 ppm/°C below the glass transition temperature. The stress in fully cured films on Si wafers is ca. 60 MPa at room temperature. The fracture toughness measured on thin films is 0.62 MPa m ½. Thin coatings absorb less than 0.25 wt.% water when exposed to 80% relative humidity at room temperature.

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