The twin cell model and its excellence in determining the glass transition temperature of thin film metallic glass

2018 ◽  
Author(s):  
Baishali Kanjilal ◽  
Samreen Iram ◽  
Atreyee Das ◽  
Haimanti Chakrabarti
Keyword(s):  
Thin Film ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Metallic Glass ◽  
Cell Model

scholarly journals Effects of Annealing on Enthalpy Recovery and Nanomechanical Behaviors of a La-Based Bulk Metallic Glass

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 579
Author(s):  
Ting Shi ◽  
Lanping Huang ◽  
Song Li
Keyword(s):  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Metallic Glass ◽  
Bulk Metallic Glass ◽  
Structural Relaxation ◽  
Supercooled Liquid ◽  
Supercooled Liquid Region ◽  
Liquid Region ◽  
Nanoindentation Measurement

Structural relaxation and nanomechanical behaviors of La65Al14Ni5Co5Cu9.2Ag1.8 bulk metallic glass (BMG) with a low glass transition temperature during annealing have been investigated by calorimetry and nanoindentation measurement. The enthalpy release of this metallic glass is deduced by annealing near glass transition. When annealed below glass transition temperature for 5 min, the recovered enthalpy increases with annealing temperature and reaches the maximum value at 403 K. After annealed in supercooled liquid region, the recovered enthalpy obviously decreases. For a given annealing at 393 K, the relaxation behaviors of La-based BMG can be well described by the Kohlrausch-Williams-Watts (KWW) function. The hardness, Young’s modulus, and serrated flow are sensitive to structural relaxation of this metallic glass, which can be well explained by the theory of solid-like region and liquid-like region. The decrease of ductility and the enhancement of homogeneity can be ascribed to the transformation from liquid-like region into solid-like region and the reduction of the shear transition zone (STZ).

Silk Polymer Coating with Low Dielectric Constant and High Thermal Stability for Ulsi Interlayer Dielectric

1997 ◽  
Vol 476 ◽  
Author(s):  
P. H. Townsend ◽  
S. J. Martin ◽  
J. Godschalx ◽  
D. R. Romer ◽  
D. W. Smith ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Polymer Network ◽  
Flow Characteristics ◽  
Interlayer Dielectric

AbstractA novel polymer has been developed for use as a thin film dielectric in the interconnect structure of high density integrated circuits. The coating is applied to the substrate as an oligomeric solution, SiLK*, using conventional spin coating equipment and produces highly uniform films after curing at 400 °C to 450 °C. The oligomeric solution, with a viscosity of ca. 30 cPs, is readily handled on standard thin film coating equipment. Polymerization does not require a catalyst. There is no water evolved during the polymerization. The resulting polymer network is an aromatic hydrocarbon with an isotropie structure and contains no fluorine.The properties of the cured films are designed to permit integration with current ILD processes. In particular, the rate of weight-loss during isothermal exposures at 450 °C is ca. 0.7 wt.%/hour. The dielectric constant of cured SiLK has been measured at 2.65. The refractive index in both the in-plane and out-of-plane directions is 1.63. The flow characteristics of SiLK lead to broad topographic planarization and permit the filling of gaps at least as narrow as 0.1 μm. The glass transition temperature for the fully cured film is greater than 490 °C. The coefficient of thermal expansivity is 66 ppm/°C below the glass transition temperature. The stress in fully cured films on Si wafers is ca. 60 MPa at room temperature. The fracture toughness measured on thin films is 0.62 MPa m ½. Thin coatings absorb less than 0.25 wt.% water when exposed to 80% relative humidity at room temperature.

Fractional Exponent of the Modified Stokes-Einstein Relation in the Metallic Glass-Forming Melt Pd43Cu27Ni10P20

2010 ◽  
Vol 146-147 ◽  
pp. 1463-1468
Author(s):  
Masahiro Ikeda ◽  
Masaru Aniya
Keyword(s):  
Diffusion Coefficient ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Metallic Glass ◽  
Bond Strength ◽  
Coordination Number ◽  
Einstein Relation ◽  
Glass Forming ◽  
Highly Correlated

The diffusion coefficient in the metallic glass-forming systems such as Pd-Cu-Ni-P exhibits a marked deviation from the Stokes-Einstein (SE) relation in the proximity of the glass transition temperature. Such a deviation is characterized by the fractional exponent p of the modified SE expression. For the material Pd43Cu27Ni10P20, it has been reported that it takes the value p = 0.75. In this work, it is shown that the value of p is highly correlated with the ratio ED / ENB, where ED and ENB are the activation energies for diffusion coefficient D and cooperativity NB defined by the Bond Strength-Coordination Number Fluctuation (BSCNF) model. The present paper reports that for the metallic glass-forming melt Pd43Cu27Ni10P20, the fractional exponent p can be calculated accurately within the framework of the BSCNF model.

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