Highly transparent conductive AZO/Zr50Cu50/AZO films in wide range of visible and near infrared wavelength grown by pulsed laser deposition

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

Download Full-text

Growth and Properties of Pulsed Laser Deposited K3Li2Nb5O15 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.351.184 ◽

2007 ◽

Vol 351 ◽

pp. 184-188 ◽

Cited By ~ 2

Author(s):

Zu Sheng Zhan ◽

Yan Sheng Gong ◽

Qiang Shen ◽

Lian Meng Zhang

Keyword(s):

Near Infrared ◽

Ambient Pressure ◽

Tungsten Bronze ◽

Pulsed Laser ◽

Laser Deposition ◽

Optical Studies ◽

Tetragonal Tungsten Bronze ◽

Infrared Wavelength ◽

Optimum Parameters ◽

Substrate Temperatures

Potassium lithium niobate (KLN: K3Li2Nb5O15) films have been deposited on quartz glass by Pulsed laser deposition (PLD) technique using a stoichiometric KLN target as starting materials. By investigating the effects of both the oxygen pressure and the substrate temperature on the structure of KLN films, optimum parameters have been identified for the growth of high-quality KLN films. At 10Pa oxygen ambient pressure, tetragonal tungsten-bronze-type structure of KLN films with (310) preferred orientation can be achieved at substrate temperatures in the range of 700-800°C. Optical studies indicate that the films are highly transparent in the visible-near-infrared wavelength range.

Download Full-text

Investigation of AuNi5 Films Deposited by Pulsed Laser Deposition for RF MEMS Switch Contacts

MRS Proceedings ◽

10.1557/proc-980-0980-ii05-46 ◽

2006 ◽

Vol 980 ◽

Author(s):

Noha Farghal ◽

Moustafa Yehia Ghannam ◽

Amr M. Shaarawi ◽

Hussein El Samman ◽

Philippe Soussan ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Room Temperature ◽

Rf Mems ◽

Laser Energy ◽

Nickel Content ◽

Pulsed Laser ◽

Laser Deposition ◽

Dominant Factor ◽

Wide Range ◽

Lift Off

AbstractIn this work, the material properties of AuNi5 films prepared by Pulsed Laser Deposition (PLD) to be used as contact materials in RF MEMS switches are investigated. PLD is used because it provides good wide range thickness control (few nanometers to tens of microns) while preserving ablation target stoichiometry. Films with thickness in the range 50 - 450 nm were deposited at Laser energy density (fluence) in the range 0.55 - 1.38 J.cm-2 on silicon substrates at room temperature. An aperture was placed between the plume and the substrate to filter out large particulates. The presence of the aperture reduced surface roughness from 8.5 nm to 4.3 nm as determined by optical profilometry. In addition, the presence of the aperture during deposition has been found to affect film stoichiometry. The latter was evaluated using X-ray Fluorescence and the Nickel content has been found to vary in the range 1.1 - 9.5%. Only films deposited with the aperture removed maintain target stoichiometry (5.2% Ni). Hence, it is believed that the presence of the aperture causes non-congruent transfer. The Nickel content within the range under investigation has practically no effect on film morphology or hardness. Laser fluence, however, has been found to be the dominant factor determining film properties. Finally, 100 µm wide AuNi5 strips 290 nm and 130 nm thick deposited at room temperature have been successfully formed on silicon wafers by lift-off photolithography.

Download Full-text

Ultrafast Pulsed Laser Deposition of Chalcogenide Glass Films for Low-loss Optical Waveguides

MRS Proceedings ◽

10.1557/proc-780-y4.1 ◽

2003 ◽

Vol 780 ◽

Cited By ~ 1

Author(s):

B. Luther-Davies ◽

V. Z. Kolev ◽

M. J. Lederer ◽

R. Yinlan ◽

M. Samoc ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Repetition Rate ◽

Pulsed Laser ◽

Fused Silica ◽

Laser Deposition ◽

Process Conditions ◽

High Optical Quality ◽

Optical Films ◽

Wide Range ◽

Deposited Films

AbstractUltra-fast pulsed laser deposition using high-repetition-rate short-pulse lasers has been shown to provide high optical quality, super smooth thin films free of scattering centres. The optimized process conditions require short ps or sub-ps pulses with repetition rate in the range 1-100 MHz, depending on the target material. Ultra-fast pulsed laser deposition was used to successfully deposit atomically-smooth, 5micron thick As2S3 films. The as-deposited films were photosensitive at wavelengths close to the band edge (≈520 nm) and waveguides could be directly patterned into them by photo-darkening using an Argon ion or frequency doubled Nd:YAG laser. The linear and nonlinear optical properties of the films were measured as well as the photosensitivity of the material. The optical losses in photo-darkened waveguides were <0.2 dB/cm at wavelengths beyond 1200nm and <0.1 dB/cm in as-deposited films. The third order nonlinearity, n2,As2S3, was measured using both four-wave mixing and the z-scan technique and varied with wavelength from 100 to 200 times fused silica (n2,Silica ≈3×10-16 cm2/W) between 1500nm and 1100nm with low nonlinear absorption.Encouraged by the Ultrafast laser deposition results, we have built a new specialized modelocked picosecond laser system for deposition of optical films and for laser formation of nanoclusters. The newly developed “state of the art” powerful Nd:YVO laser can operate over a wide range of wavelengths, intensities, and repetition rates in MHz range. A brief description of the 50W laser installation is presented.

Download Full-text

Carbon Nitride Thin Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-327-245 ◽

1993 ◽

Vol 327 ◽

Cited By ~ 4

Author(s):

Randolph E. Treece ◽

James S. Horwitz ◽

Douglas B. Chrisey

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Carbon Nitride ◽

Ion Beam ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Deposition Parameters ◽

Wide Range ◽

Gas Atmosphere

AbstractThin films of diamond and diamond-like carbon (DLC) are technologically important materials that serve as hard, scratch resistant and chemically inert coatings for tools and optics. Recent calculations suggest that β-C3N4 should be harder than diamond. We have deposited carbon nitride (CNx) thin films by pulsed laser deposition. The films were grown from a graphite target in a nitrogen background. The nitrogen source was either (a) a N2 gas atmosphere, or (b) a N2+/N+ ion beam generated by a Kaufman ion gun. A wide range of deposition parameters were investigated, such as deposition pressure (0.3-900 mTorr N2), substrate temperature (50 and 600°C), and laser fluence (1-4 J/cm2) and laser repetition rate (1-10 Hz). The films have been characterized by Rutherford Backscattering Spectroscopy, thin-film X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. In general, the films were nitrogen deficient with a maximum nitrogen to carbon ratio (N/C) of 0.45 and a shift in the G band Raman peak consistent with amorphous CNx (a-CNx).

Download Full-text

PULSED LASER DEPOSITION OF HI-Tc-SUPERCONDUCTOR FILMS IN THE ULTRAVIOLET, VISIBLE, AND NEAR-INFRARED RANGE

High Tc Superconductor Materials ◽

10.1016/b978-0-444-88884-6.50037-7 ◽

1990 ◽

pp. 292-299

Author(s):

W. KAUTEK ◽

B. ROAS ◽

L. SCHULTZ

Keyword(s):

Pulsed Laser Deposition ◽

Near Infrared ◽

Pulsed Laser ◽

Laser Deposition ◽

Infrared Range ◽

Superconductor Films ◽

Near Infrared Range

Download Full-text

Broadband Near-Infrared Quantum Cutting in Metal-Ion Codoped Y3Al5O12Thin Films Grown by Pulsed-Laser Deposition for Solar Cell Application

Journal of Nanomaterials ◽

10.1155/2013/587036 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 5

Author(s):

Mei Kwan Lau ◽

Jianhua Hao

Keyword(s):

Solar Cell ◽

Pulsed Laser Deposition ◽

Metal Ion ◽

Near Infrared ◽

Pulsed Laser ◽

Laser Deposition ◽

Supporting Evidence ◽

Crystalline Silicon Solar Cell ◽

Solar Cell Application ◽

Quantum Cutting

We have deposited thin films of yttrium aluminum garnet (YAG) doped with Ce3+and Yb3+on quartz and silicon substrates by pulsed laser deposition. Near-infrared (NIR) quantum cutting which involves the emission of NIR photons through the downconversion from Ce3+to Yb3+is realized. Upon the broadband excitation of Ce3+ions with a visible photon at the peak wavelength of 450 nm, NIR photons are generated by Yb3+ions, with an emission wavelength centered at 1030 nm. The luminescent decay curves of Ce3+were recorded as a supporting evidence corresponding to the energy transfer. This work offers a better and more convenient approach compatible with crystalline silicon solar cell compared to conventional bulk phosphors.

Download Full-text

Lanthanide Yb/Er co-doped semiconductor layered WSe2 nanosheets with near-infrared luminescence at telecommunication wavelengths

Nanoscale ◽

10.1039/c8nr01139g ◽

2018 ◽

Vol 10 (19) ◽

pp. 9261-9267 ◽

Cited By ~ 37

Author(s):

Gongxun Bai ◽

Zhibin Yang ◽

Huihong Lin ◽

Wenjing Jie ◽

Jianhua Hao

Keyword(s):

Pulsed Laser Deposition ◽

Near Infrared ◽

Pulsed Laser ◽

Laser Deposition ◽

Lanthanide Ion ◽

Infrared Luminescence ◽

Co Doped

In this work, we develop the fast deposition of centimeter-scale layered lanthanide ion Yb/Er co-doped WSe2 using pulsed laser deposition.

Download Full-text

Pulsed Laser Deposition of Y1Ba2Cu3O7-δ?Thin Films in High Oxygen Partial Pressures

MRS Proceedings ◽

10.1557/proc-689-e6.8 ◽

2001 ◽

Vol 689 ◽

Cited By ~ 1

Author(s):

Timothy J. Haugan ◽

Paul N. Barnes ◽

Rama M. Nekkanti ◽

Iman Maartense ◽

Lyle B. Brunke ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Coated Conductors ◽

Laser Deposition ◽

Critical Temperatures ◽

Partial Pressures ◽

Wide Range ◽

Lower Oxygen ◽

Ybco Coated Conductors ◽

Very High

ABSTRACTPulsed laser deposition of Yba2Cu3O7-δ?(YBCO) coated conductors was studied for the range of P(O2) from 120 mTorr to 1200 mTorr, higher than typically used oxygen partial pressures during deposition. The purpose of the investigation was to determine the sensitivity of YBCO film quality to varying P(O2) for scaled-up fabrication of long-length coated conductors. Deposition at high P(O2) (≥?400 mTorr) gave very high and more consistent critical temperatures (Tc ≈?92 ±?0.4 °K) than results obtained at lower oxygen partial pressures (≤?200 mTorr) as determined by magnetic susceptibility measurements. Typically, the lower partial pressures are used although the laser fluence used in this research (3.2 J/cm2) is higher than typical. Transport Jc's were consistantly high for a wide range of oxygen pressures, 5–8 ×?106 A/cm2 at 77 K, self-field for P(O2) = 200–1200 mTorr. These results indicate that pulsed laser deposition of YBCO is relatively insensitive to P(O2) at the higher pressures of oxygen considered.

Download Full-text