Growth and Properties of Pulsed Laser Deposited K3Li2Nb5O15 Thin Films

2007 ◽  
Vol 351 ◽  
pp. 184-188 ◽  
Author(s):  
Zu Sheng Zhan ◽  
Yan Sheng Gong ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Near Infrared ◽  
Ambient Pressure ◽  
Tungsten Bronze ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical Studies ◽  
Tetragonal Tungsten Bronze ◽  
Infrared Wavelength ◽  
Optimum Parameters ◽  
Substrate Temperatures

Potassium lithium niobate (KLN: K3Li2Nb5O15) films have been deposited on quartz glass by Pulsed laser deposition (PLD) technique using a stoichiometric KLN target as starting materials. By investigating the effects of both the oxygen pressure and the substrate temperature on the structure of KLN films, optimum parameters have been identified for the growth of high-quality KLN films. At 10Pa oxygen ambient pressure, tetragonal tungsten-bronze-type structure of KLN films with (310) preferred orientation can be achieved at substrate temperatures in the range of 700-800°C. Optical studies indicate that the films are highly transparent in the visible-near-infrared wavelength range.

Preparation and characterization of nanocrystalline potassium lithium niobate powders and films

2001 ◽  
Vol 16 (12) ◽  
pp. 3609-3613 ◽  
Author(s):  
H. X. Zhang ◽  
C. H. Kam ◽  
Y. Zhou ◽  
X. Q. Han ◽  
S. D. Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Lithium Niobate ◽  
Near Infrared ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Ambient Atmosphere ◽  
Tetragonal Tungsten Bronze ◽  
Raman Scattering Spectroscopy ◽  
Infrared Wavelength ◽  
Optical Modes

Potassium lithium niobate (KLN) powders and thin films were prepared from metalorganic compounds through the sol-gel process. A homogeneous and stable KLN precursor was synthesized by mixing the metal ethoxides. Powder gels were obtained through the hydrolysis of the solution by exposing it to the ambient atmosphere. Thin films were deposited on Si, SiO2/Si, and fused quartz by a spin coating technique. The pyrolysis and crystallization of KLN powders and films were investigated through the methods of differential thermal analysis, thermogravimetric analysis, x-ray diffraction, and Raman scattering spectroscopy. The results revealed that both KLN powders and films could crystallize into a tetragonal tungsten–bronze-type phase with appropriate annealing. Optical studies indicated that the films were highly transparent in the visible–near-infrared wavelength range and could support optical modes.

scholarly journals Highly transparent conductive AZO/Zr50Cu50/AZO films in wide range of visible and near infrared wavelength grown by pulsed laser deposition

2017 ◽  
Vol 7 ◽  
pp. 910-913 ◽  
Author(s):  
Jingyun Cheng ◽  
Guohua Cao ◽  
Haitao Zong ◽  
Chaoyang Kang ◽  
Erguang Jia ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Near Infrared ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Infrared Wavelength ◽  
Wide Range

Nanorods of Potassium Tantalum Niobate Tetragonal Tungsten Bronze Phase Grown by Pulsed Laser Deposition

2013 ◽  
Vol 25 (14) ◽  
pp. 2793-2802 ◽  
Author(s):  
Q. Simon ◽  
V. Dorcet ◽  
P. Boullay ◽  
V. Demange ◽  
S. Députier ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Tungsten Bronze ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tetragonal Tungsten Bronze ◽  
Potassium Tantalum Niobate

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

Effect of Annealing on Structural and Optical Properties of Pulsed Laser Deposited Titanium Dioxide Thin Films

2009 ◽  
Vol 67 ◽  
pp. 65-70 ◽  
Author(s):  
Gaurav Shukla ◽  
Alika K. Khare
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films ◽  
Post Annealing ◽  
Post Annealing Temperature

TiO2 is a widely studied material for many important applications in areas such as environmental purification, photocatalyst, gas sensors, cancer therapy and high effect solar cell. However, investigations demonstrated that the properties and applications of titanium oxide films depend upon the nature of the crystalline phases present in the films, i.e. anatase and rutile phases. We report on the pulsed laser deposition of high quality TiO2 thin films. Pulsed Laser deposition of TiO2 thin films were performed in different ambient viz. oxygen, argon and vacuum, using a second harmonic of Nd:YAG laser of 6 ns pulse width. These deposited films of TiO2 were further annealed for 5hrs in air at different temperatures. TiO2 thin films were characterized using x-ray diffraction, SEM, photoluminescence, transmittance and reflectance. We observed effect of annealing over structural, morphological and optical properties of TiO2 thin films. The anatase phase of as-deposited TiO2 thin films is found to change into rutile phase with increased annealing temperature. Increase in crystalline behaviour of thin films with post-annealing temperature is also observed. Surface morphology of TiO2 thin films is dependent upon ambient pressure and post- annealing temperature. TiO2 thin films are found to be optically transparent with very low reflectivity hence will be suitable for antireflection coating applications.

Optical studies of amorphous Ge nanostructures in Al2O3 produced by pulsed laser deposition

2013 ◽  
Vol 541 ◽  
pp. 92-96 ◽  
Author(s):  
J. Martín-Sánchez ◽  
J. Toudert ◽  
R. Serna ◽  
A. de Andrés ◽  
J. García-López
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical Studies

scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

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