Ultrafast Pulsed Laser Deposition of Chalcogenide Glass Films for Low-loss Optical Waveguides

2003 ◽  
Vol 780 ◽  
Author(s):  
B. Luther-Davies ◽  
V. Z. Kolev ◽  
M. J. Lederer ◽  
R. Yinlan ◽  
M. Samoc ◽  
...  

AbstractUltra-fast pulsed laser deposition using high-repetition-rate short-pulse lasers has been shown to provide high optical quality, super smooth thin films free of scattering centres. The optimized process conditions require short ps or sub-ps pulses with repetition rate in the range 1-100 MHz, depending on the target material. Ultra-fast pulsed laser deposition was used to successfully deposit atomically-smooth, 5micron thick As2S3 films. The as-deposited films were photosensitive at wavelengths close to the band edge (≈520 nm) and waveguides could be directly patterned into them by photo-darkening using an Argon ion or frequency doubled Nd:YAG laser. The linear and nonlinear optical properties of the films were measured as well as the photosensitivity of the material. The optical losses in photo-darkened waveguides were <0.2 dB/cm at wavelengths beyond 1200nm and <0.1 dB/cm in as-deposited films. The third order nonlinearity, n2,As2S3, was measured using both four-wave mixing and the z-scan technique and varied with wavelength from 100 to 200 times fused silica (n2,Silica ≈3×10-16 cm2/W) between 1500nm and 1100nm with low nonlinear absorption.Encouraged by the Ultrafast laser deposition results, we have built a new specialized modelocked picosecond laser system for deposition of optical films and for laser formation of nanoclusters. The newly developed “state of the art” powerful Nd:YVO laser can operate over a wide range of wavelengths, intensities, and repetition rates in MHz range. A brief description of the 50W laser installation is presented.

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.


1998 ◽  
Vol 31 (22) ◽  
pp. 3185-3187 ◽  
Author(s):  
J Yin ◽  
Z C Wu ◽  
Z L Wang ◽  
Y Y Zhu ◽  
Z G Liu

2010 ◽  
Vol 25 (4) ◽  
pp. 680-686 ◽  
Author(s):  
Zhifeng Ying ◽  
Wentao Tang ◽  
Zhigao Hu ◽  
Wenwu Li ◽  
Jian Sun ◽  
...  

The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65–5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.


2006 ◽  
Vol 980 ◽  
Author(s):  
Noha Farghal ◽  
Moustafa Yehia Ghannam ◽  
Amr M. Shaarawi ◽  
Hussein El Samman ◽  
Philippe Soussan ◽  
...  

AbstractIn this work, the material properties of AuNi5 films prepared by Pulsed Laser Deposition (PLD) to be used as contact materials in RF MEMS switches are investigated. PLD is used because it provides good wide range thickness control (few nanometers to tens of microns) while preserving ablation target stoichiometry. Films with thickness in the range 50 - 450 nm were deposited at Laser energy density (fluence) in the range 0.55 - 1.38 J.cm-2 on silicon substrates at room temperature. An aperture was placed between the plume and the substrate to filter out large particulates. The presence of the aperture reduced surface roughness from 8.5 nm to 4.3 nm as determined by optical profilometry. In addition, the presence of the aperture during deposition has been found to affect film stoichiometry. The latter was evaluated using X-ray Fluorescence and the Nickel content has been found to vary in the range 1.1 - 9.5%. Only films deposited with the aperture removed maintain target stoichiometry (5.2% Ni). Hence, it is believed that the presence of the aperture causes non-congruent transfer. The Nickel content within the range under investigation has practically no effect on film morphology or hardness. Laser fluence, however, has been found to be the dominant factor determining film properties. Finally, 100 µm wide AuNi5 strips 290 nm and 130 nm thick deposited at room temperature have been successfully formed on silicon wafers by lift-off photolithography.


2006 ◽  
Vol 6 (11) ◽  
pp. 3426-3428
Author(s):  
Ji-Suk Kim ◽  
Kyeong-Seok Lee ◽  
Sang Sub Kim

Nanocomposite thin films consisting of nanometer-sized Ag particles embedded in amorphous Ba0.5Sr0.5TiO3 matrix were prepared on fused silica substrates by an alternating pulsed laser deposition method. Their optical nonlinearities have been studied using the Z-scan method. The surface plasmon resonance (SPR) peak shifts to red and increases with the increasing the volume fraction of Ag in the nanocomposite films. The magnitude of the third-order nonlinear susceptibility of the nanocomposite with an Ag volume fraction of 3.3% was calculated to be ∼2 × 10−8 esu at the SPR wavelength.


1995 ◽  
Vol 397 ◽  
Author(s):  
M. Tyunin

ABSTRACTFilm growth in pulsed laser deposition (PLD) is described as a process of sorption of ablated species on the substrate surface. Film growth rate and composition are qualitatively analyzed as a function of laser fluence and ambient gas pressure. As an example, analysis of the film composition is carried out for BiSrCaCuO and PbZrTiO pulsed laser deposited films.


2013 ◽  
Vol 278 ◽  
pp. 67-70 ◽  
Author(s):  
M. Pervolaraki ◽  
Ph. Komninou ◽  
J. Kioseoglou ◽  
G.I. Athanasopoulos ◽  
J. Giapintzakis

APL Materials ◽  
2016 ◽  
Vol 4 (12) ◽  
pp. 126109 ◽  
Author(s):  
H. Schraknepper ◽  
C. Bäumer ◽  
F. Gunkel ◽  
R. Dittmann ◽  
R. A. De Souza

1993 ◽  
Vol 327 ◽  
Author(s):  
Randolph E. Treece ◽  
James S. Horwitz ◽  
Douglas B. Chrisey

AbstractThin films of diamond and diamond-like carbon (DLC) are technologically important materials that serve as hard, scratch resistant and chemically inert coatings for tools and optics. Recent calculations suggest that β-C3N4 should be harder than diamond. We have deposited carbon nitride (CNx) thin films by pulsed laser deposition. The films were grown from a graphite target in a nitrogen background. The nitrogen source was either (a) a N2 gas atmosphere, or (b) a N2+/N+ ion beam generated by a Kaufman ion gun. A wide range of deposition parameters were investigated, such as deposition pressure (0.3-900 mTorr N2), substrate temperature (50 and 600°C), and laser fluence (1-4 J/cm2) and laser repetition rate (1-10 Hz). The films have been characterized by Rutherford Backscattering Spectroscopy, thin-film X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. In general, the films were nitrogen deficient with a maximum nitrogen to carbon ratio (N/C) of 0.45 and a shift in the G band Raman peak consistent with amorphous CNx (a-CNx).


2018 ◽  
Vol 35 (4) ◽  
pp. 878-884 ◽  
Author(s):  
P. Potera ◽  
I. Virt ◽  
G. Wisz ◽  
J. Cebulski

Abstract Optical properties of the zinc-cobalt oxide (ZnCoO) layers manufactured at different process conditions have been investigated. ZnCoO layers were grown on sapphire and glass substrates by pulsed laser deposition (PLD) technique. The influence of growth conditions as well as post-growth annealing on the films transmission and gap energy was analyzed.


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