Fine-control-valve of halide perovskite single crystal quality for high performance X-ray detection

2021 ◽  
Author(s):  
Weijun Li ◽  
Huayang Li ◽  
Jinmei Song ◽  
Chunjie Guo ◽  
Huimao Zhang ◽  
...  
2021 ◽  
Vol 33 (8) ◽  
pp. 2006010
Author(s):  
Yucheng Liu ◽  
Yunxia Zhang ◽  
Xuejie Zhu ◽  
Jiangshan Feng ◽  
Ioannis Spanopoulos ◽  
...  

Author(s):  
Xiang Li ◽  
Xinyuan Du ◽  
Peng Zhang ◽  
Yunqiu Hua ◽  
Lin Liu ◽  
...  

Author(s):  
Shrikant SAINI ◽  
Izuki Matsumoto ◽  
Sakura Kishishita ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
...  

Abstract Hybrid halide perovskite has been recently focused on thermoelectric energy harvesting due to the cost-effective fabrication approach and ultra-low thermal conductivity. To achieve high performance, tuning of electrical conductivity is a key parameter that is influenced by grain boundary scattering and charge carrier density. The fabrication process allows tuning these parameters. We report the use of anti-solvent to enhance the thermoelectric performance of lead-free hybrid halide perovskite, CH3NH3SnI3, thin films. Thin films with anti-solvent show higher connectivity in grains and higher Sn+4 oxidation states which results in enhancing the value of electrical conductivity. Thin films were prepared by a cost-effective wet process. Structural and chemical characterizations were performed using x-ray diffraction, scanning electron microscope, and x-ray photoelectron spectroscopy. The value of electrical conductivity and the Seebeck coefficient were measured near room temperature. The high value of power factor (1.55 µW/m.K2 at 320 K) was achieved for thin films treated with anti-solvent.


2012 ◽  
Vol 717-720 ◽  
pp. 1287-1290 ◽  
Author(s):  
Balaji Raghothamachar ◽  
Rafael Dalmau ◽  
Baxter Moody ◽  
H. Spalding Craft ◽  
Raoul Schlesser ◽  
...  

Using the physical vapor transport (PVT) method, single crystal boules of AlN have been grown and wafers sliced from them have been characterized by synchrotron white beam X-ray topography (SWBXT) in conjunction with optical microscopy. X-ray topographs reveal that the wafers contain dislocations that are inhomogeneously distributed with densities varying from as low as 0 cm-2 to as high as 104 cm-2. Two types of dislocations have been identified: basal plane dislocations and threading dislocations, both having Burgers vectors of type 1/3<112-0> indicating that their origin is likely due to post-growth deformation. In some cases, the dislocations are arranged in low angle grain boundaries. However, large areas of the wafers are nearly dislocation-free and section X-ray topographs of these regions reveal the high crystalline perfection.


2019 ◽  
Author(s):  
Gebhard J. Matt ◽  
Ievgen Levchuk ◽  
Judith Knüttel ◽  
Shreetu Shrestha ◽  
Johannes Dallmann ◽  
...  

2020 ◽  
Vol 45 (2) ◽  
pp. 355 ◽  
Author(s):  
Qiang Xu ◽  
Wenyi Shao ◽  
Yang Li ◽  
Zhichao Zhu ◽  
Bo Liu ◽  
...  

2020 ◽  
Vol 8 (19) ◽  
pp. 2000814 ◽  
Author(s):  
Yucheng Liu ◽  
Yunxia Zhang ◽  
Zhou Yang ◽  
Jian Cui ◽  
Haodi Wu ◽  
...  

2019 ◽  
Author(s):  
Gebhard J. Matt ◽  
Ievgen Levchuk ◽  
Judith Knüttel ◽  
Shreetu Shrestha ◽  
Johannes Dallmann ◽  
...  

2009 ◽  
Vol 42 (3) ◽  
pp. 485-489 ◽  
Author(s):  
Hideo Toraya

A new high-performance diffracted-beam analyzer consisting of multiple pieces of a perfect crystal is proposed. The pieces of Ge(111) crystal are set so that their crystal lattice planes coincide with tangent planes of a logarithmic spiral function. Each piece of the crystal works in the same manner as a single-crystal analyzer. An X-ray beam diffracted from a specimen is diffracted successively by individual crystals of the analyzer, and these diffracted beams are detected separately by a one-dimensional position-sensitive detector. If the analyzer consists of, for example, ten pieces of crystal, ten diffraction patterns can be observed in a single diffractometer scan, and they can be integrated into a single diffraction pattern. Thus the resulting intensity becomes greater by one order of magnitude, while the angular resolution is the same as that of a single-crystal analyzer. The geometrical aspects of the analyzer are described, and some experimental results are given.


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