Tensile creep of Ti2AlC in air in the temperature range 1000–1150°C

2012 ◽  
Vol 66 (10) ◽  
pp. 805-808 ◽  
Author(s):  
Darin J. Tallman ◽  
Michael Naguib ◽  
Babak Anasori ◽  
Michel W. Barsoum
Keyword(s):  
Tensile Creep ◽  
Temperature Range

scholarly journals Structure analysis and enhancement of creep resistance and thermal properties of eutectic Sn-Ag lead free solder alloy by Ti and Cd - addition

2017 ◽  
pp. 5092-5099
Author(s):  
Amal Mohamed Yassin ◽  
Berlent Abd El Hamed Khalifa ◽  
Reda Afify Ismail
Keyword(s):  
Thermal Properties ◽  
Solder Alloy ◽  
Creep Property ◽  
Axial Ratio ◽  
Tensile Creep ◽  
Creep Tests ◽  
X Ray ◽  
Temperature Range ◽  
Morphological Studies ◽  
Residual Strains

Eutectic (Sn-3.5wt.%Ag) solder alloy is used in electronic circuits in which the creep property of the solder joints is essential for their applications. The study of creep, structure and thermal properties of three solder alloys (Sn-3.5wt.%Ag,Sn-3.5wt.%Ag-0.27wt.%Ti and Sn-3.5wt.Ag-0.27wt.%Cd) is characterized by the presence of (Ag3Sn-IMC) beside the phase (β-Sn). The microstructure parameters obtained from the X-ray analysis represented by, lattice parameters (a, c), the axial ratio (c/a), the residual strains (Δa/a0, Δc/c0) and peak height intensities (hkl) of some crystallographic planes are given. All parameters were found to be sensitive to the additions of (Ti or Cd), applied stresses and working temperatures in the range (298-373K).The crystallite size of the (211) reflection was found to increase from (61-132nm) with the additions and to decrease from (115-79nm) with the working temperatures. The morphological studies show a remarkable decrease in the size of (β-Sn) grains with the addition of (Cd) content which confirms the X-ray data. The obtained results show a decrease in melting temperature with the additions. The creep properties are notably improved by the addition of either (Ti) or (Cd). In order to reveal the creep characteristics such as stress exponent (n) and activation energy (Q), the tensile creep tests were performed within the temperature range (298-373K) at constant applied stress (17.27MPa). Based on the obtained stress exponents and activation energies, it is explained that the dominant deformation mechanism is dislocation climb over all temperature range.  

The Microstructure and Creep Behavior of a Boron-Modified Ti-15Al-33Nb (at%) Alloy

2006 ◽  
Vol 15-17 ◽  
pp. 976-981 ◽  
Author(s):  
C.J. Cowen ◽  
Carl J. Boehlert
Keyword(s):  
Creep Behavior ◽  
Creep Resistance ◽  
Constant Load ◽  
Tensile Creep ◽  
Stress Range ◽  
Monolithic Alloy ◽  
Temperature Range ◽  
Normal Constituent

The affect of boron (B) on the microstructure and creep behavior of a Ti-15Al-33Nb (at%) alloy was investigated. In addition to the normal constituent phases present in the monolithic alloy, the B-modified alloy contained borides enriched in titanium and niobium. These borides were present in the form of needles/laths up to 50 μm long and 10 μm wide which took up 5-9% of the volume. Constant load, tensile-creep experiments were performed in the stress range of 150-340 MPa and the temperature range of 650-710°C, in both air and vacuum environments. An addition of 0.5 at% B did not improve the creep resistance of the monolithic alloy, while the addition of 5 at% B significantly improved the creep resistance.

Tensile creep of fine grained (3–5 μm) Ti3SiC2 in the 1000–1200°C temperature range

2001 ◽  
Vol 49 (19) ◽  
pp. 4103-4112 ◽  
Author(s):  
M Radovic ◽  
M.W Barsoum ◽  
T El-Raghy ◽  
S Wiederhorn
Keyword(s):  
Tensile Creep ◽  
Temperature Range ◽  
Fine Grained

Tensile creep of coarse-grained Ti3SiC2 in the 1000–1200°C temperature range

2003 ◽  
Vol 361 (1-2) ◽  
pp. 299-312 ◽  
Author(s):  
M. Radovic ◽  
M.W. Barsoum ◽  
T. El-Raghy ◽  
S.M. Wiederhorn
Keyword(s):  
Tensile Creep ◽  
Coarse Grained ◽  
Temperature Range

Dislocation Substructures Produced During Tensile, Creep, and Fatigue Deformation of Ti3Al at 700°C

1977 ◽  
Vol 35 ◽  
pp. 272-273
Author(s):  
S. M. L. Sastry
Keyword(s):  
Intermetallic Compound ◽  
Strain Rate ◽  
Tensile Creep ◽  
Slip Systems ◽  
Slip Vector ◽  
Superlattice Structure ◽  
Slip Activity ◽  
Dislocation Arrangement ◽  
Ordered Intermetallic ◽  
Tangled Dislocation

Ti3Al is an ordered intermetallic compound having the DO19-type superlattice structure. The compound exhibits very limited ductility in tension below 700°C because of a pronounced planarity of slip and the absence of a sufficient number of independent slip systems. Significant differences in slip behavior in the compound as a result of differences in strain rate and mode of deformation are reported here.Figure 1 is a comparison of dislocation substructures in polycrystalline Ti3Al specimens deformed in tension, creep, and fatigue. Slip activity on both the basal and prism planes is observed for each mode of deformation. The dominant slip vector in unidirectional deformation is the a-type (b) = <1120>) (Fig. la). The dislocations are straight, occur for the most part in a screw orientation, and are arranged in planar bands. In contrast, the dislocation distribution in specimens crept at 700°C (Fig. lb) is characterized by a much reduced planarity of slip, a tangled dislocation arrangement instead of planar bands, and an increased incidence of nonbasal slip vectors.

Tensile Creep of Y-Si3N4: II. Cavitation

1991 ◽  
Vol 49 ◽  
pp. 972-973 ◽  
Author(s):  
B. J. Hockey ◽  
S. M. Wiederhorn
Keyword(s):  
Silicon Nitride ◽  
Creep Rupture ◽  
Tensile Creep ◽  
Sintering Aids ◽  
Microstructural Changes

ATEM has been used to characterize three different silicon nitride materials after tensile creep in air at 1200 to 1400° C. In Part I, the microstructures and microstructural changes that occur during testing were described, and consistent with that description the designations and sintering aids for these materials were: W/YAS, a SiC whisker reinforced Si3N4 processed with yttria (6w/o) and alumina (1.5w/o); YAS, Si3N4 processed with yttria (6 w/o) and alumina (1.5w/o); and YS, Si3N4 processed with yttria (4.0 w/o). This paper, Part II, addresses the interfacial cavitation processes that occur in these materials and which are ultimately responsible for creep rupture.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

Domain coarsening by grain boundary migration in ordered Ni4Mo

1986 ◽  
Vol 44 ◽  
pp. 560-561
Author(s):  
K. Vasudevan ◽  
H. P. Kao ◽  
C. R. Brooks ◽  
E. E. Stansbury
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Short Range ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Rapid Cooling ◽  
Temperature Range ◽  
Fee Structure ◽  
Domain Coarsening ◽  
Boundary Reaction

The Ni4Mo alloy has a short-range ordered fee structure (α) above 868°C, but transforms below this temperature to an ordered bet structure (β) by rearrangement of atoms on the fee lattice. The disordered α, retained by rapid cooling, can be ordered by appropriate aging below 868°C. Initially, very fine β domains in six different but crystallographically related variants form and grow in size on further aging. However, in the temperature range 600-775°C, a coarsening reaction begins at the former α grain boundaries and the alloy also coarsens by this mechanism. The purpose of this paper is to report on TEM observations showing the characteristics of this grain boundary reaction.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

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