Effect of initial dislocation density on hydrogen accumulation behavior in martensitic steel

2020 ◽  
Vol 178 ◽  
pp. 318-323 ◽  
Author(s):  
Yuji Momotani ◽  
Akinobu Shibata ◽  
Takashi Yonemura ◽  
Yu Bai ◽  
Nobuhiro Tsuji
2018 ◽  
Vol 7 (4) ◽  
pp. 26 ◽  
Author(s):  
Manabu Tamura

The sub-grain size, d, during steady-state dislocation creep of polycrystalline metals is theoretically formulated to be inversely proportional to the dislocation density, ρ, which is defined as the number of dislocations swept out of a sub-grain divided by the cross-sectional area of the sub-grain. This dislocation density differs from the typically observed dislocation density inside a sub-grain after unloading, ρ_ob. In the current work, the ρ_ob values inside sub-grains in steadily crept specimens of Al, Cu, Fe, Fe–Mo alloy, austenitic stainless steel, and high-Cr martensitic steel reported in the literature were used to evaluate the relation ρ_ob=ηρ. It was confirmed that η≈1 for pure metals (regardless of the type of metal) crept at high temperatures and low stresses or for long durations and η>1 for Mo-containing alloys and martensitic steel crept at low temperatures and/or high stresses. Moreover, it is suggested that the condition η>1 corresponds to a state of excess immobile dislocations inside the sub-grain. The theoretical relation d_ob (≈d)∝η∙〖ρ_ob〗^(-1), where d_ob is the observed sub-grain size, essentially differs from the well-known empirical relation d_ob∝〖ρ_ob〗^(-0.5).


2012 ◽  
Vol 53 (9) ◽  
pp. 1598-1603 ◽  
Author(s):  
Zhenhua Cong ◽  
Yoshinori Murata ◽  
Yuhki Tsukada ◽  
Toshiyuki Koyama

2018 ◽  
Vol 913 ◽  
pp. 627-635
Author(s):  
Ming Yi Zhang ◽  
Min Zhong ◽  
Shuai Yuan ◽  
Jing Song Bai ◽  
Ping Li

In this paper, three dimensional discrete dislocation dynamics method was used to quantitatively investigate the influence of initial defects on mechanical response of single crystal copper. Both the irradiation defects (interstitial loops) and random dislocation lines with different densities are considered. The simulation results demonstrate that the yield strength of single crystal copper is higher with higher initial dislocation density and higher interstitial loop density. Dislocation density increases quickly by nucleation and multiplication and microbands are formed during plastic deformation when only the random dislocation lines are initially considered. Characteristics of microbands show excellent agreement with experiment results. Dislocation multiplication is suppressed in the presence of interstitial loops, and junctions and locks between dislocations and interstitial loops are formed. Dislocation density evolution shows fluctuation accompanied with strain-stress curve fluctuation.


2017 ◽  
Vol 885 ◽  
pp. 275-279 ◽  
Author(s):  
Péter János Szabó ◽  
András Csóré

As a novel procedure for determining dislocation density, a software was improved with which data obtained by Scanning Electron Microscope (SEM) measurements can be collected and the value of superficial dislocation density can be calculated. Applying this method we investigated cold rolled lath martensitic steel samples. Besides dislocation density values, microstructure mapped by Electron Backscatter Diffraction (EBSD) will be discussed.


2007 ◽  
Vol 345-346 ◽  
pp. 29-32
Author(s):  
Sei Miura ◽  
Yoshito Nishimura ◽  
Nagato Ono

The effect of sub-grain on the yield stress of pure copper single crystals with the [253] orientation was investigated by using the etch pit technique. The single crystal plates were successfully prepared from the seed crystals, which were produced at the melting temperature of 1473 K by the Bridgeman method. The present investigation confirmed the Hall-Petch relation concerning the effect of sub-grain boundaries on the macroscopic yielding of pure copper. The result derived from the extrapolation of the relationship of critical resolved shear stress (CRSS) and the initial dislocation density and sub-grain size is in good agreement with the evaluation in high purity copper single crystals of low dislocation density.


1990 ◽  
Vol 112 (2) ◽  
pp. 183-187 ◽  
Author(s):  
C. T. Tsai ◽  
O. W. Dillon ◽  
R. J. De Angelis

A stress analysis that describes the crystal growing process requires a material model that is valid over a wide temperature range and includes dislocation motion and multiplication. The stresses developed in the growing process could induce residual stresses, changes in dislocation density and buckling into the growing crystals. The dislocation density is introduced as an internal variable in the constitutive model. The stress-strain and dislocation density-strain characteristics of silicon crystals are discussed as a function of temperature, strain rate, and initial dislocation density.


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