Investigation of Structural, Kinetics and Electrical Properties of CuAlMnZn Shape memory alloy – p-type Silicon Schottky Diode

2021 ◽  
pp. 112908
Author(s):  
E. Aldirmaz ◽  
M. Guler ◽  
E. Guler ◽  
A. Dere ◽  
A. Tataroglu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Schottky Diode ◽  
Type Silicon ◽  
P Type

Electrical, kinetic and photoelectrical properties of CuAlMnMg shape memory alloy/n-Si Schottky diode

2021 ◽  
pp. 161600
Author(s):  
C. Aksu Canbay ◽  
A. Tataroğlu ◽  
A. Dere ◽  
Abdullah G. Al-Sehemi ◽  
Abdulkerim Karabulut ◽  
...  
Keyword(s):  
Shape Memory Alloy ◽  
Shape Memory ◽  
Schottky Diode ◽  
Photoelectrical Properties

The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/p-type silicon junctions

2017 ◽  
Vol 91 (4) ◽  
pp. 413-420 ◽  
Author(s):  
M. Çavaş ◽  
F. Yakuphanoğlu ◽  
Ş. Karataş
Keyword(s):  
Electrical Properties ◽  
Cadmium Oxide ◽  
Type Silicon ◽  
P Type

Dissociation Kinetics of Shallow-Acceptor-Hydrogen Pairs in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
T. Zundel ◽  
J. Weber
Keyword(s):  
Schottky Diode ◽  
Reverse Bias ◽  
Temperature Dependent ◽  
Dissociation Kinetics ◽  
Shallow Acceptor ◽  
Dissociation Energies ◽  
Type Silicon ◽  
P Type ◽  
Kinetics Of

AbstractAnnealing of hydrogenated p-type silicon with a reverse bias applied to a Schottky diode allows us to precisely determine the dissociation frequency vA of shallow acceptor-hydrogen pairs (AH with A = B, Al, Ga, and In). The temperature dependent values of vA satisfy the relation vA = voAexp (-EA/kT), with voB = 2.8 . 1014 s-1, voAl = 3.1 . 1013 s-1, VoGa = 6.9 . 1013 s-1, and voIn = 8.4 · 1013 s-1. The dissociation energies EA depend only weakly on the acceptors: EB = (1.28±0.03)eV, EAl = (1.44±0.02) eV, EGa = (1.40±0.03) eV, and EIn = (1.42±0.05) eV. The dissociation frequency of BH pairs shifts to a lower value when H is replaced by the deuterium isotope.

Electrical properties of lightly doped p-type silicon–germanium single crystals

1998 ◽  
Vol 83 (10) ◽  
pp. 5258-5263 ◽  
Author(s):  
P. Gaworzewski ◽  
K. Tittelbach-Helmrich ◽  
U. Penner ◽  
N. V. Abrosimov
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Silicon Germanium ◽  
Type Silicon ◽  
P Type

Electrical properties of Schottky diode Pt/SiC and Pt/porous SiC performed on highly resistif p-type 6H-SiC

Vacuum ◽  
2007 ◽  
Vol 81 (5) ◽  
pp. 663-668 ◽  
Author(s):  
K. Bourenane ◽  
A. Keffous ◽  
G. Nezzal
Keyword(s):  
Electrical Properties ◽  
Schottky Diode ◽  
P Type ◽  
Porous Sic

S0303-3-5 Mechanical and Electrical Properties of Ti-Ni-Cu Melt-Spun Shape Memory Alloy Ribbon

2009 ◽  
Vol 2009.1 (0) ◽  
pp. 203-204
Author(s):  
Michihiro UEGAKI ◽  
Hiroki CHO ◽  
Takaei YAMAMOTO ◽  
Toshio SAKUMA ◽  
Yuji TAKEDA ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Alloy Ribbon ◽  
Mechanical And Electrical Properties ◽  
Melt Spun
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