Dissociation Kinetics of Shallow-Acceptor-Hydrogen Pairs in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
T. Zundel ◽  
J. Weber
Keyword(s):  
Schottky Diode ◽  
Reverse Bias ◽  
Temperature Dependent ◽  
Dissociation Kinetics ◽  
Shallow Acceptor ◽  
Dissociation Energies ◽  
Type Silicon ◽  
P Type ◽  
Kinetics Of

AbstractAnnealing of hydrogenated p-type silicon with a reverse bias applied to a Schottky diode allows us to precisely determine the dissociation frequency vA of shallow acceptor-hydrogen pairs (AH with A = B, Al, Ga, and In). The temperature dependent values of vA satisfy the relation vA = voAexp (-EA/kT), with voB = 2.8 . 1014 s-1, voAl = 3.1 . 1013 s-1, VoGa = 6.9 . 1013 s-1, and voIn = 8.4 · 1013 s-1. The dissociation energies EA depend only weakly on the acceptors: EB = (1.28±0.03)eV, EAl = (1.44±0.02) eV, EGa = (1.40±0.03) eV, and EIn = (1.42±0.05) eV. The dissociation frequency of BH pairs shifts to a lower value when H is replaced by the deuterium isotope.

Kinetics of light and elevated temperature-induced degradation in cast mono p-type silicon

Solar Energy ◽  
2021 ◽  
Vol 224 ◽  
pp. 1000-1007
Author(s):  
Shangzhi Cheng ◽  
Fangxu Ji ◽  
Chunlan Zhou ◽  
Junjie Zhu ◽  
Rune Søndenå ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Type Silicon ◽  
P Type ◽  
Kinetics Of

Activation Kinetics of the Boron–oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence

2017 ◽  
Vol 7 (4) ◽  
pp. 988-995 ◽  
Author(s):  
Chang Sun ◽  
Hieu Trong Nguyen ◽  
Hang Cheong Sio ◽  
Fiacre Emile Rougieux ◽  
Daniel Macdonald
Keyword(s):  
Oxygen Defect ◽  
Activation Kinetics ◽  
Type Silicon ◽  
High Injection ◽  
P Type ◽  
Kinetics Of

Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon

1990 ◽  
Vol 209 ◽  
Author(s):  
R. Rizk ◽  
P. De Mierry ◽  
D. Ballutaud ◽  
M. Aucouturier ◽  
D. Mathiot
Keyword(s):  
Hydrogen Diffusion ◽  
New Approach ◽  
Kinetic And Thermodynamic Parameters ◽  
Dissociation Energies ◽  
Molecule Formation ◽  
Type Silicon ◽  
P Type ◽  
Phosphorus Doped ◽  
Diffusion Profiles

ABSTRACTDeuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm−3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model. The new approach which excludes the H2 molecule formation, as applied recently to ptype silicon, allows the determination of kinetic and thermodynamic parameters such as diffusion coefficients, activation and dissociation energies. These parameters 6re compared with those found for p-type silicon and discussed in the light ofavailable data for n-type material.

Temperature dependent electrical characteristics of rectifying graphitic contacts to p-type silicon

2018 ◽  
Vol 34 (1) ◽  
pp. 015003 ◽  
Author(s):  
Hung V Pham ◽  
Phuong Yen Le ◽  
Hiep N Tran ◽  
Thomas J Raeber ◽  
Mohammad Saleh N Alnassar ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Type Silicon ◽  
P Type

Electrical Study of Self-Assembled Ge Quantum Dots Embedded in P-Type Silicon. Temperature Dependent Capacitance Voltage and DLTS Study

2011 ◽  
Vol 178-179 ◽  
pp. 67-71 ◽  
Author(s):  
Victor Tapio Rangel-Kuoppa ◽  
Gang Chen ◽  
Wolfgang Jantsch
Keyword(s):  
Quantum Dots ◽  
Reverse Bias ◽  
Charge Carrier Density ◽  
Type Silicon ◽  
Capacitance Voltage ◽  
Ge Quantum Dots ◽  
The One ◽  
Cv Measurements ◽  
P Type ◽  
Two Peaks

The electrical properties of dome-shaped and pyramid-shaped Ge Quantum Dots (QDs) embedded in p-type Silicon are reported. Capacitance-Voltage (T-CV) characteristics are reported for the temperature range of 35 K to 296 K. The T-CV results showed the desired charge carrier density of the Silicon, on the order of 1016 cm-3, at room temperature. Two shoulders are observed in the CV curves between 270 K and 175 K. They are explained as charge stored in the dome- and pyramid-shaped QDs. Below 175 K, only one shoulder is observed in the CV measurements, attributed to charge trapped in dome-shaped QDs. The DLTS study confirms these results. Using a reverse bias between -0.1 V and -1 V two peaks are seen at 50 and 70 K. They are explained in terms of the boron state (the one at 50 K) and charged stored on pyramid-shaped Ge QDs (the one at 70 K). Increasing the reverse bias from -1 V to -1.4 V shows the appearance of a peak around 60 K, attributed to dome-shaped Ge QDs. At the same time, a shoulder appears around 100 K for -1 V, which extends to larger temperatures as the reverse bias magnitude is increased. The activation energies found are around 50 meV (due to Boron), 150 to 250 meV (due to pyramid-shaped Ge QDs), 300 to 350 meV (due to dome-shaped Ge QDs) and 425 meV (due to both dome- and pyramid-shaped Ge QDs).

Arsenic Redistribution and Outdiffusion in Implanted Czochralski-Grown P-Type Silicon During Rapid Thermal Annealing

1988 ◽  
Vol 100 ◽  
Author(s):  
G. Chaussemy ◽  
B. Canut ◽  
S. N. Kumar ◽  
D. Barbier ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Coefficients ◽  
Good Description ◽  
Temperature Dependent ◽  
One Dimensional ◽  
Type Silicon ◽  
The One ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTThe effects of the implantation parameters (dose and energy) on the Arsenic redistribution and outdiffusion rate in (100) p-type silicon, after 7–12 s Rapid Thermal Annealing in the 1100–1200°C temperature range have been investigated. Four doses ranging from 2×1014 to l×1016 cm−2, and As+ energies between 70 and 170 keV, have been studied. The experimental diffusion profiles obtained from the SIMS measurements, in complement with the RBS results, were modelled using the one dimensional Fick's equation with semi-infinite boundary conditions, using a concentration and temperature dependent diffusion coefficient D(C, T). The As diffusivity was classically attributed to As+V0, As+V−, and As+V − pairs with the related diffusion coefficients taken from the literature. A relatively good description of the As redistribution was obtained without introducing any transient or SPE effects.

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