Analysis of the open-circuit voltage of Cu2ZnSn(S, Se)4 thin film solar cell

Solar Energy ◽  
2018 ◽  
Vol 164 ◽  
pp. 231-242 ◽  
Author(s):  
Jiaxiong Xu ◽  
Junhui Lin ◽  
Chunan Zhuang
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit

High efficiency and high open-circuit voltage quadruple-junction silicon thin film solar cells for future electronic applications

2017 ◽  
Vol 10 (5) ◽  
pp. 1134-1141 ◽  
Author(s):  
Bofei Liu ◽  
Lisha Bai ◽  
Tiantian Li ◽  
Changchun Wei ◽  
Baozhang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film ◽  
Silicon Based

A highly efficient quadruple-junction silicon based thin-film solar cell with a remarkably high open-circuit voltage was demonstrated to inspire functional photoelectrical devices for environmental applications.

Zn1−xMgxO second buffer layer of Cu2Sn1−xGexS3 thin-film solar cell for minimizing carrier recombination and open-circuit voltage deficit

Solar Energy ◽  
2020 ◽  
Vol 204 ◽  
pp. 769-776
Author(s):  
Haruki Hayashi ◽  
Jakapan Chantana ◽  
Yu Kawano ◽  
Takahito Nishimura ◽  
Abdurashid Mavlonov ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Buffer Layer ◽  
Thin Film Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Carrier Recombination

Integrated Thin-Film Rechargeable Battery on α-Si Thin-Film Solar Cell

2013 ◽  
Vol 788 ◽  
pp. 685-688 ◽  
Author(s):  
Rong Bin Ye ◽  
Ken Yoshida ◽  
Koji Ohta ◽  
Mamoru Baba
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Discharge Capacity ◽  
Thin Film Solar Cell ◽  
Coulombic Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Rechargeable Battery ◽  
Dry Process ◽  
Si Thin Film

In this paper we reported on fabrication and characterization of a composite harvesting device integrated thin-film rechargeable battery on α-Si thin-film solar cell. The α-Si thin-film solar cell typically presented open-circuit voltage of 4.3 V, short-circuit current of 15.4 mA/cm2 and efficiency of 7.4%. The thin-film rechargeable battery composed of Nb2O5/LiPON/LiMn2O4 systems fabricated using dry process, which showed the initial discharge capacity of about 215 μAh (or 12.4 μAh/cm2), the cycleabilty for discharge was good at keeping about 12.3 μAh/cm2 with a small decreasing ratio of 0.1% per cycle and the coulombic efficiency was all over 95% for the 100 cycles. On the other hand, the discharge capacity of approximately 80% was provided by the self-charging of the solar cell for 10 min, and the coulombic efficiency was also over 95%.

scholarly journals Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Peyman Jelodarian ◽  
Abdolnabi Kosarian
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Doping Concentration ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Maximum Efficiency ◽  
Junction Solar Cell ◽  
Double Junction

The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

scholarly journals State of Art of Thin Film Photovoltic Cell: A Review

2020 ◽  
pp. 157-163
Author(s):  
Rohan Vijay Salve
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Absorption Length ◽  
Proper Understanding ◽  
Copper Indium ◽  
Copper Indium Gallium

The latest progress and future perspectives of thin-film photovoltaic technology are reviewed herein. This paper reviews the two thin-film solar cell technologies copper indium gallium selenide (CIGS), and cadmium telluride (CdTe) and their parameter affecting them. Thin-film solar cell offers a variety of choices in term of device design, tunable property (lifetime, absorption length, conductivity) and verity substrate. Proper understanding of thin-film photovoltaic cells under various parameters like temperature, bandgap, conversion efficiency, open-circuit voltage, and short circuit current, fill factor, and thickness.

scholarly journals Wet Processing in State-of-the-Art Cu(In,Ga)(S,Se)2 Thin Film Solar Cells

2018 ◽  
Vol 282 ◽  
pp. 300-305 ◽  
Author(s):  
Dilara Gokcen Buldu ◽  
Jessica de Wild ◽  
Thierry Kohl ◽  
Sunil Suresh ◽  
Gizem Birant ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
State Of The Art ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Interface Quality ◽  
Interface Recombination ◽  
Wet Processing

Interface quality plays a key role in solar cell applications. Interface recombination at the front and rear surfaces, which determine this quality, have significant effects on open circuit voltage and fill factor values. In this work, several surface treatments were applied on Cu(In,Ga)Se2 (CIGS) surfaces to improve the interface quality. Besides, the passivation layer implementation was investigated to reduce interface recombination between the buffer and absorber layers.

scholarly journals Enhancement Open Circuit Voltage of Calcium Titanate AR Coated Magnesium Solar Cell

2019 ◽  
Vol 8 (4) ◽  
pp. 1272-1278
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Coating Thickness ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Controlled Atmosphere ◽  
Solar Simulator ◽  
Uniform Coating ◽  
Sputter Coating ◽  
Ar Coating

The present research aims to enhance the open circuit voltage of fabricated solar cell through Anti–Reflection (AR) coating on the cell substrate. Solar cell is fabricate using ITO Glass, titanium dioxide, magnesium and redox. Calcium Titanium Oxide (CaTiO3) is chosen as the AR coating material for constructing thin film layer on fabricated solar cell. Selected AR coating material have unique features such as orthorhombic, biaxial, non-radioactive and non-magnetic with electron bulk density of 3.91 g/cm3 respectively. Commonly, voltage generation of the multi crystalline solar cell is low (12% to 14%) due to much reflection of inward sun radiation. Deposition of AR coating on the substrate (fabricated solar cell) can minimize the reflection loss of sun radiation. The maximum improvement in solar cell efficiency after AR coating has been reported as 19.3%. Sputter coating technique is more favorable for thin film coating due to its salient features like uniform coating thickness controlled by time. This uniform coating thickness absorbs more sun radiation. Radio Frequency (RF) magnetron sputter coating technique is utilized in the current research to deposit CaTiO3 on solar cells. Prior to coating, the AR material is pelletized using Universal Testing Machine (UTM). The substrate are coated under varying time duration of 15-minutes, 30-minutes and 45-minutes in order to analyze the variation in open circuit voltage. The deposition of coating on the substrate are confirmed using SEM and FESEM. Open circuit voltage of controlled atmosphere studies for pure and AR coated solar cells (fabricated) are examined. Controlled atmosphere tests of AR coated thin films are conducted by placing the substrate inside a solar simulator and the solar simulator consist of IR thermometer (To measure Temperature), solar power meter (To measure Radiation) and multimeter (To measure Open circuit voltage). Neodym daylight lamp is used to control the radiation in solar simulator. The improvement in cell voltage proves that thin film AR coating considerably minimizes the reflective loss.

Graded Buffer Layer Effect on Performance of the Amorphous Silicon Thin Film Solar Cells

2011 ◽  
Vol 685 ◽  
pp. 60-64 ◽  
Author(s):  
Shui Yang Lien ◽  
Meng Jia Yang ◽  
Yang Shih Lin ◽  
Chia Fu Chen ◽  
Po Hung Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film

It is widely accepted that graded buffer layer between the p-layer and i-layer increase the efficiency of amorphous silicon solar cells. The open-circuit voltage (Voc), short current density (Jsc) and fill factor (FF) of the thin film solar cell are obviously increased. In the present study, hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated by 27.12 MHz plasma enhanced chemical vapor deposition (PECVD). We discussed the three conditions at the p/i interface without buffer layer, buffer layer and graded buffer layer of thin film solar cells by TCAD software. The influences of the performance of the solar cell with the different buffer layer are investigated. The cell with graded buffer layer has higher efficiency compared with the cells without buffer layer and buffer layer. The graded buffer layer enhances the conversion efficiency of the solar cell by improving Vocand FF. It could be attributed to a reduction of interface recombination rate near the junction. The best performance of conversion efficiency (η)=8.57% (Voc=0.81 V, Jsc=15.46 mA/cm2, FF=68%) of the amorphous silicon thin film solar cell was achieved.

Sign in / Sign up

Export Citation Format

Share Document