scholarly journals Enhancement Open Circuit Voltage of Calcium Titanate AR Coated Magnesium Solar Cell

2019 ◽  
Vol 8 (4) ◽  
pp. 1272-1278

The present research aims to enhance the open circuit voltage of fabricated solar cell through Anti–Reflection (AR) coating on the cell substrate. Solar cell is fabricate using ITO Glass, titanium dioxide, magnesium and redox. Calcium Titanium Oxide (CaTiO3) is chosen as the AR coating material for constructing thin film layer on fabricated solar cell. Selected AR coating material have unique features such as orthorhombic, biaxial, non-radioactive and non-magnetic with electron bulk density of 3.91 g/cm3 respectively. Commonly, voltage generation of the multi crystalline solar cell is low (12% to 14%) due to much reflection of inward sun radiation. Deposition of AR coating on the substrate (fabricated solar cell) can minimize the reflection loss of sun radiation. The maximum improvement in solar cell efficiency after AR coating has been reported as 19.3%. Sputter coating technique is more favorable for thin film coating due to its salient features like uniform coating thickness controlled by time. This uniform coating thickness absorbs more sun radiation. Radio Frequency (RF) magnetron sputter coating technique is utilized in the current research to deposit CaTiO3 on solar cells. Prior to coating, the AR material is pelletized using Universal Testing Machine (UTM). The substrate are coated under varying time duration of 15-minutes, 30-minutes and 45-minutes in order to analyze the variation in open circuit voltage. The deposition of coating on the substrate are confirmed using SEM and FESEM. Open circuit voltage of controlled atmosphere studies for pure and AR coated solar cells (fabricated) are examined. Controlled atmosphere tests of AR coated thin films are conducted by placing the substrate inside a solar simulator and the solar simulator consist of IR thermometer (To measure Temperature), solar power meter (To measure Radiation) and multimeter (To measure Open circuit voltage). Neodym daylight lamp is used to control the radiation in solar simulator. The improvement in cell voltage proves that thin film AR coating considerably minimizes the reflective loss.

2017 ◽  
Vol 10 (5) ◽  
pp. 1134-1141 ◽  
Author(s):  
Bofei Liu ◽  
Lisha Bai ◽  
Tiantian Li ◽  
Changchun Wei ◽  
Baozhang Li ◽  
...  

A highly efficient quadruple-junction silicon based thin-film solar cell with a remarkably high open-circuit voltage was demonstrated to inspire functional photoelectrical devices for environmental applications.


2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Peyman Jelodarian ◽  
Abdolnabi Kosarian

The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.


2018 ◽  
Vol 282 ◽  
pp. 300-305 ◽  
Author(s):  
Dilara Gokcen Buldu ◽  
Jessica de Wild ◽  
Thierry Kohl ◽  
Sunil Suresh ◽  
Gizem Birant ◽  
...  

Interface quality plays a key role in solar cell applications. Interface recombination at the front and rear surfaces, which determine this quality, have significant effects on open circuit voltage and fill factor values. In this work, several surface treatments were applied on Cu(In,Ga)Se2 (CIGS) surfaces to improve the interface quality. Besides, the passivation layer implementation was investigated to reduce interface recombination between the buffer and absorber layers.


2012 ◽  
Vol 1426 ◽  
pp. 161-166
Author(s):  
Daiji Kanematsu ◽  
Mitsuhiro Matsumoto ◽  
Shigeo Yata ◽  
Yoichiro Aya ◽  
Akira Terakawa ◽  
...  

ABSTRACTWe correlated the texture morphology and the solar cell properties by measuring the distribution in the texture morphology. As a result, the short-circuit current ISC was approximated across various types of substrates by the standard texture height. Furthermore, we investigated the texture morphology from the point of view of the electrical effects. With regard to this point, the open-circuit voltage VOC was correlated to the steepest texture angle. Therefore, we consider that the both of the ISC and the VOC can be improved by controlling the distribution in the texture morphology.


Solar Energy ◽  
2020 ◽  
Vol 204 ◽  
pp. 769-776
Author(s):  
Haruki Hayashi ◽  
Jakapan Chantana ◽  
Yu Kawano ◽  
Takahito Nishimura ◽  
Abdurashid Mavlonov ◽  
...  

2003 ◽  
Vol 11 (4) ◽  
pp. 243-248 ◽  
Author(s):  
S. Nishiwaki ◽  
S. Siebentritt ◽  
P. Walk ◽  
M. Ch. Lux-Steiner

Solar Energy ◽  
2018 ◽  
Vol 164 ◽  
pp. 231-242 ◽  
Author(s):  
Jiaxiong Xu ◽  
Junhui Lin ◽  
Chunan Zhuang

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.


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