Structural and electronic properties of zinc blende BxGa1−xN nitrides

2009 ◽  
Vol 11 (1) ◽  
pp. 200-206 ◽  
Author(s):  
R. Riane ◽  
Z. Boussahl ◽  
A. Zaoui ◽  
L. Hammerelaine ◽  
S.F. Matar
Keyword(s):  
Electronic Properties ◽  
Zinc Blende ◽  
Structural And Electronic Properties

COMPARATIVE STUDY OF THE STRUCTURAL AND ELECTRONIC PROPERTIES OF BN(5, 5) AND C(5, 5) NANOTUBES UNDER PRESSURE

2010 ◽  
Vol 24 (24) ◽  
pp. 4851-4859
Author(s):  
KAIHUA HE ◽  
GUANG ZHENG ◽  
GANG CHEN ◽  
QILI CHEN ◽  
MIAO WAN ◽  
...  
Keyword(s):  
High Pressure ◽  
Comparative Study ◽  
Charge Density ◽  
Band Gap ◽  
Electronic Properties ◽  
Cross Section ◽  
First Principles ◽  
First Principles Calculations ◽  
Zinc Blende ◽  
Structural And Electronic Properties

The structural and electronic properties of BN(5, 5) and C(5, 5) nanotubes under pressure are studied by using first principles calculations. In our study range, BN(5, 5) undergoes obvious elliptical distortion, while for C(5, 5) the cross section first becomes an ellipse and then, under further pressure, is flattened. The band gap of BN(5, 5) decreases with increasing pressure, which is inverse to that of zinc blende BN, whereas for C(5, 5) the metallicity is always preserved under high pressure. The population of charge density indicates that intertube bonding is formed under pressure. We also find that BN(5, 5) may collapse, and a new polymer material based on C(5, 5) is formed by applying pressure.

Plane-wave pseudopotential study on mechanical and electronic properties for group III-V binary phases

2002 ◽  
Vol 743 ◽  
Author(s):  
S. Q. Wang ◽  
H. Q. Ye
Keyword(s):  
Bulk Modulus ◽  
Electronic Properties ◽  
Density Functional ◽  
High Pressures ◽  
Lattice Structure ◽  
Structure Variation ◽  
Group Iii ◽  
Zinc Blende ◽  
Structural And Electronic Properties ◽  
Atom Configuration

ABSTRACTThe result of first-principles density functional calculations of the bulk modulus and related structural and electronic properties of the total 25 group III-V binary phases with zinc-blende and wurtzite structures are presented. The behavior of energy band structure variation under high pressures is also studied. It is found that the bulk modulus is more sensitive to the local atom configuration than the lattice structure. The crystallographic geometry plays an important role in the electronic property of these phases.

FIRST-PRINCIPLE CALCULATION OF STRUCTURAL AND ELECTRONIC PROPERTIES OF ZINC-BLENDE ByAlxGa1-x-yN MATCHED TO AlN SUBSTRATE

2012 ◽  
Vol 26 (24) ◽  
pp. 1250159 ◽  
Author(s):  
LAKHDAR DJOUDI ◽  
ABDELHADI LACHEBI ◽  
BOUALEM MERABET ◽  
HAMZA ABID
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
Strong Dependence ◽  
Theoretical Data ◽  
Lattice Parameter ◽  
Full Potential ◽  
Generalized Gradient ◽  
First Principle Calculation ◽  
Zinc Blende ◽  
Structural And Electronic Properties

The full-potential linearized augmented plane wave method (FP-LAPW) within density functional theory, using the generalized gradient approximation, is used to study the structural and electronic properties of zinc-blende B y Al x Ga 1-x-y N quaternary alloys that match the lattice of an AlN substrate. The range of compositions, for which the lattice of the alloy matches AlN , is determined. Our calculated band structure, density of states, electron density and lattice parameter for B y Al x Ga 1-x-y N allow to accurately evaluate the profound effect that the incorporation of small amounts of Boron have on structural and electronic properties of Al x Ga 1-x N alloys. A comparison of the ground state properties with the available experimental and theoretical data is made for the compounds related to B y Al x Ga 1-x-y N and of the Al x Ga 1-x N alloys. The results show a strong dependence of the band gap (as well as the lattice parameter) on the Boron content, which might make B y Al x Ga 1-x-y N materials promising and useful for optoelectronic applications.

First-principles prediction of the structural and electronic properties of zinc blende GaNxAs1−x alloys

2013 ◽  
Vol 16 (4) ◽  
pp. 1138-1147 ◽  
Author(s):  
Mohamed Issam Ziane ◽  
Zouaoui Bensaad ◽  
Tarik Ouahrani ◽  
Boutaleb Labdelli ◽  
Hamza Ben Nacer ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Zinc Blende ◽  
Structural And Electronic Properties

ChemInform Abstract: Structural and Electronic Properties of Zinc Blende BxGa1-xN Nitrides

ChemInform ◽  
2009 ◽  
Vol 40 (13) ◽  
Author(s):  
R. Riane ◽  
Z. Boussahl ◽  
A. Zaoui ◽  
L. Hammerelaine ◽  
S. F. Matar
Keyword(s):  
Electronic Properties ◽  
Zinc Blende ◽  
Structural And Electronic Properties

First-principles calculations for the structural and electronic properties of GaAs1−xPx nanowires

2016 ◽  
Vol 27 (03) ◽  
pp. 1650035 ◽  
Author(s):  
Rezek Mohammad ◽  
Şenay Katırcıoğlu
Keyword(s):  
Density Functional Theory ◽  
Electronic Properties ◽  
First Principles ◽  
Density Functional ◽  
Band Gaps ◽  
First Principles Calculations ◽  
Functional Theory ◽  
Quantum Size ◽  
Zinc Blende ◽  
Structural And Electronic Properties

Structural stability and electronic properties of GaAs[Formula: see text]P[Formula: see text] ([Formula: see text]) nanowires (NWs) in zinc-blende (ZB) ([Formula: see text] diameter [Formula: see text][Formula: see text]Å) and wurtzite (WZ) ([Formula: see text][Formula: see text]Å) phases are investigated by first-principles calculations based on density functional theory (DFT). GaAs ([Formula: see text]) and GaP ([Formula: see text]) compound NWs in WZ phase are found energetically more stable than in ZB structural ones. In the case of GaAs[Formula: see text]P[Formula: see text] alloy NWs, the energetically favorable phase is found size and composition dependent. All the presented NWs have semiconductor characteristics. The quantum size effect is clearly demonstrated for all GaAs[Formula: see text]P[Formula: see text] ([Formula: see text]) NWs. The band gaps of ZB and WZ structural GaAs compound NWs with [Formula: see text] diameter [Formula: see text][Formula: see text]Å and [Formula: see text][Formula: see text]Å, respectively are enlarged by the addition of concentrations of phosphorus for obtaining GaAs[Formula: see text]P[Formula: see text] NWs proportional to the x values around 0.25, 0.50 and 0.75.

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