Blue-shift in the optical band gap of sol-gel derived Zn(1-x)SrxO nanoparticles

2020 ◽  
Vol 108 ◽  
pp. 106379
Author(s):  
Ashok Kumawat ◽  
Saikat Chattopadhyay ◽  
Kamakhya Prakash Misra ◽  
Nilanjan Halder ◽  
Sushil Kumar Jain ◽  
...  
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Blue Shift

Blue shift of optical band-gap in LiNbO3 thin films deposited by sol–gel technique

2012 ◽  
Vol 520 (21) ◽  
pp. 6510-6514 ◽  
Author(s):  
S. Satapathy ◽  
Chandrachur Mukherjee ◽  
Taruna Shaktawat ◽  
P.K. Gupta ◽  
V.G. Sathe
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Blue Shift ◽  
Gel Technique

Large blue shift in the optical band-gap of sol–gel derived Ba0.5Sr0.5TiO3 thin films

2007 ◽  
Vol 141 (5) ◽  
pp. 243-247 ◽  
Author(s):  
Somnath C. Roy ◽  
G.L. Sharma ◽  
M.C. Bhatnagar
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Blue Shift

scholarly journals The Variation of Optical Band Gap for ZnO:In Films Prepared by Sol-Gel Technique

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Guomei Tang ◽  
Hua Liu ◽  
Wei Zhang
Keyword(s):  
Band Gap ◽  
Absorption Edge ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Blue Shift ◽  
Red Shift ◽  
Visible Range ◽  
Zno Films ◽  
Gel Technique

ZnO:In films with different concentrations (0–5 at.%) are successfully synthesized on quartz substrates using sol-gel technique. The structure, morphology, and optical properties of ZnO:In films are investigated by X-ray diffraction, atomic force microscopy, and UV-visible spectrophotometer. It is found that all the films with columnar structural morphology grow along the preferred [001] orientation and the incorporation of indium can improve the crystallinity of ZnO films. The transmittance of the films is about 80% in the visible range. A change of the optical absorption edge from blue shift to red shift is observed for ZnO:In films as the doping concentration increases, which means that the optical band gap first increases and then decreases. The blue shift is due to the Burstein-Moss effect. The sharp jump of the absorption edge from blue-shift to red shift is ascribe to the band gap narrowing caused by the merging of the donor and conduction bands of ZnO:In at high doping concentration.

scholarly journals Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications

2017 ◽  
Vol 162 ◽  
pp. 01042
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Optoelectronic Applications

Blue shift in the optical band gap of amorphous Hf–In–Zn–O thin films deposited by RF sputtering

2012 ◽  
Vol 525 ◽  
pp. 172-174 ◽  
Author(s):  
Anup Thakur ◽  
Se-Jun Kang ◽  
Jae Yoon Baik ◽  
Hanbyeol Yoo ◽  
Ik-Jae Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rf Sputtering ◽  
Blue Shift

scholarly journals Green Synthesis and Characterization of Gallium(III) Sulphide (α-Ga2S3) Nanoparicles at Room Temperature

Nano Hybrids ◽  
2014 ◽  
Vol 6 ◽  
pp. 37-46 ◽  
Author(s):  
Tansir Ahamad ◽  
Saad M. Alshehri
Keyword(s):  
Green Synthesis ◽  
Band Gap ◽  
Raman Spectra ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Blue Shift ◽  
Synthesis And Characterization ◽  
Spectroscopic Techniques ◽  
Sodium Thiosulphate

Two different batches of Gallium (III) sulphide nanocrystals, (α-Ga2S3)1 and (α-Ga2S3)2 were synthesized at room temperature by the reaction of Gallium (III) chloride with sodium thiosulphate in water for 10 and 20 min respectively. The resultant nanoparticles were characterized by different spectroscopic techniques. TEM micrographs showed well-defined, close to hexagonal particles, and the lattice fringes in the HRTEM images confirmed their nanocrystalline nature. The sizes of (α-Ga2S3)1 and (α-Ga2S3)2 were 12 and 35 nm respectively with similar morphologies. Optical band gap energies (3.43 eV/3.41 eV) and photoluminescence peaks 635/641 nm (red shift) and 414/420 nm (blue shift) of the synthesized α-Ga2S3 nanocrystals suggest that they may be promising photocatalysts. Raman spectra for the α-Ga2S3, shows very sharp bands at 119, 135 and 148 cm-1 due to Ga-S2 scissoring.

INFLUENCE OF ANNEALING TEMPERATURE ON THE CHARACTERISTICS OF NANOCRYSTALLINE SnO2 THIN FILMS PRODUCED BY Sol–Gel AND CHEMICAL BATH DEPOSITION FOR GAS SENSOR APPLICATIONS

2017 ◽  
Vol 24 (07) ◽  
pp. 1750104 ◽  
Author(s):  
SELMA M. H. AL-JAWAD ◽  
ABDULHUSSAIN K. ELTTAYF ◽  
AMEL S. SABER
Keyword(s):  
Band Gap ◽  
Gas Sensor ◽  
Chemical Bath Deposition ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Rutile Structure ◽  
Sensor Applications ◽  
Average Grain Size

Pure nanocrystalline SnO2 films were grown on a clean glass substrate by using sol–gel dip coating and chemical bath deposition (CBD) techniques for gas sensor applications. The films were annealed in air at 300[Formula: see text]C, 400[Formula: see text]C, and 500[Formula: see text]C for 60[Formula: see text]min. The deposited films with a thickness of approximately 300 [Formula: see text] 20 nm were analyzed through X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical absorption spectroscopy. Results revealed that the films produced by dip coating exhibited a tetragonal rutile structure and those produced by CBD showed a tetragonal rutile and orthorhombic structure. The crystalline sizes of the films produced by dip coating annealed at 300[Formula: see text]C, 400[Formula: see text]C, and 500[Formula: see text]C were 8, 14, and 22.34 nm and those for CBD films at these temperatures were 10, 15, and 22 nm, respectively. AFM and SEM results indicated that the average grain size increased as annealing temperature increased. The transmittance and absorbance spectra were then recorded at wavelengths ranging from 300[Formula: see text]nm to 1000[Formula: see text]nm. The films produced by both the methods yielded high transmission at visible regions. The optical band gap energy of dip-coated films also increased as annealing temperature increased. In particular, their optical band gap energies were 3.5, 3.75, and 3.87[Formula: see text]eV at 300[Formula: see text]C, 400[Formula: see text]C, and 500[Formula: see text]C, respectively. By comparison, the energy band gap of CBD-prepared films decreased as annealing temperature increased, and their corresponding band gaps were 3.95, 3.85, and 3.8[Formula: see text]eV at the specified annealing temperatures. The films were further investigated in terms of their sensing abilities for carbon monoxide (CO) gas at 50 ppm by measuring their sensitivity to this gas at different times and temperatures. Our results demonstrated that dip-coated and CBD-prepared films were highly sensitive to CO at 200[Formula: see text]C and 250[Formula: see text]C, respectively.

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