scholarly journals Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications

2017 ◽  
Vol 162 ◽  
pp. 01042
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Optoelectronic Applications

BAND GAP SHIFT DUE TO NITROGEN DOPING, COMPOSITION GAS PRESSURE AND MICROWAVE POWER OF a-C:N THIN FILMS GROWN BY NEWLY-DEVELOPED SURFACE WAVE MICROWAVE PLASMA CVD

2004 ◽  
Vol 11 (06) ◽  
pp. 559-562
Author(s):  
M. RUSOP ◽  
S. ADHIKARI ◽  
A. M. M. OMER ◽  
S. ADHIKARY ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Wave ◽  
Film Thickness ◽  
Band Gap ◽  
Microwave Power ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Microwave Plasma ◽  
Gas Pressure ◽  
Developed Surface

This paper reports the band gap shifting due to nitrogen ( N 2) doping, microwave power and composition gas pressure of nitrogenated amorphous carbon ( a - C : N ) thin films deposited by newly-developed surface wave microwave plasma chemical vapor deposition (SWMP-CVD). Results show that the optical band gap decreased from 4.1 eV to 2.4 eV corresponding to the increase of N 2 doping from 0 to 5% in the gas ratio. However, further increase of N 2 doping beyond 5% did not decrease the band gap. It was found that composition gas pressure and launched MW power during film deposition also largely control the optical band gap. Investigation of annealing effects on optical band gap and film thickness of the N 2 doped films revealed that both band gap and film thickness decrease significantly with increase of annealing temperature. The optical band gap decreased from 2.4 eV to 1.1 eV, while film thickness decreases from 320 nm to 50 nm corresponding to 200 to 400°C annealing temperature. The results revealed that the properties of a - C : N can be tuned by changing the annealing temperature, composition gas pressure and microwave power of the SWMP-CVD system.

Properties of TiO2 Thin Film Prepared by Sol-Gel Dip Coating

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Gel Method ◽  
Glass Substrates

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.

OPTICAL ABSORPTION IN AMORPHOUS THIN FILMS OF SnO2 DEPOSITED BY THERMAL EVAPORATION

2007 ◽  
Vol 21 (12) ◽  
pp. 2017-2032 ◽  
Author(s):  
M. ANWAR ◽  
S. A. SIDDIQI ◽  
I. M. GHAURI
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Band Gap ◽  
Optical Band Gap ◽  
Fundamental Absorption Edge ◽  
Outward Diffusion ◽  
Optical Energy ◽  
Amorphous Thin Films

The fundamental absorption edge of SnO 2 amorphous thin films has been investigated. It has been observed that the optical energy gap decreases with the increase in film thickness, substrate temperature and post deposition annealing. The results are analysed by assuming optical absorption by non-direct transition. The decrease in optical band gap with increase in film thickness may be interpreted in terms of the incorporation of oxygen vacancies in the SnO 2 lattice. The decrease in optical energy due to the increase in substrate temperature may be ascribed to the release of trapped electrons by thermal energy or by the outward diffusion of the oxygen-ion vacancies, which are quite mobile even at low temperatures. The decrease in optical band gap due to annealing may be due to the formation of tin species of lower oxidation state.

Correlation of Thickness with the Photocatalytic Characteristic of TiO2 Thin Films

2005 ◽  
Vol 486-487 ◽  
pp. 65-68 ◽  
Author(s):  
Sang Wook Lee ◽  
Hyun Suk Jung ◽  
Dong Wook Kim ◽  
Kug Sun Hong
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Stearic Acid ◽  
Band Gap ◽  
Uv Light ◽  
Sol Gel ◽  
Photocatalytic Property ◽  
Tio2 Films ◽  
Tio2 Thin Films ◽  
Sol Gel Process

5, 10, and 30 nm thickness of transparent TiO2 thin films were fabricated using sol-gel process, and the influence of film thickness on the photocatalytic property was investigated. The increase in film thickness was found to enhance the photocatalytic property of the films. Photocatalytic properties of each film were estimated by decomposition of stearic acid. The amount of decomposed stearic acid increased with film thickness (5 - 30 nm). For the case of 30 nm thickness film, the stearic acid was decomposed perfectly in twelve minutes. UV-vis spectra and photocurrents of each film clearly showed that the photoactivities of TiO2 films were related to the amount of absorbed UV light and band gap shift.

Optical band gap controlling of nanostructure Mn doped CdO thin films prepared by sol–gel spin coating method

Optik ◽  
2015 ◽  
Vol 126 (5) ◽  
pp. 575-577 ◽  
Author(s):  
Zayed A. Alahmed ◽  
H.A. Albrithen ◽  
Ahmed A. Al-Ghamdi ◽  
F. Yakuphanoglu
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Spin Coating Method ◽  
Coating Method ◽  
Cdo Thin Films ◽  
Mn Doped
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