Numerical study on the performance metrics of lightly doped drain and source graphene nanoribbon field effect transistors with double-material-gate

2013 ◽  
Vol 64 ◽  
pp. 227-236 ◽  
Author(s):  
Wei Wang ◽  
Xiao Yang ◽  
Na Li ◽  
Lu Zhang ◽  
Ting Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Performance Metrics ◽  
Field Effect Transistors ◽  
Numerical Study ◽  
Graphene Nanoribbon ◽  
Lightly Doped Drain

Modeling of lightly doped drain and source graphene nanoribbon field effect transistors

2013 ◽  
Vol 60 ◽  
pp. 67-72 ◽  
Author(s):  
Mehdi Saremi ◽  
Maryam Saremi ◽  
Hamid Niazi ◽  
Arash Yazdanpanah Goharrizi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Lightly Doped Drain

New device structures for graphene nanoribbon field effect transistors

2016 ◽  
Vol 6 (3) ◽  
pp. 265-270 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Chong Wu Yi ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
New Device ◽  
Device Structures

Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

Plasmonics ◽  
2015 ◽  
Vol 11 (2) ◽  
pp. 573-577 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Alieh Hivechi ◽  
Fatemeh Tavakoli ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Breakdown Voltage ◽  
Edge Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Generation Rate
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