Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

Jung-Il Lee; Myung-Bok Lee; Sang Young Lee; Kwang Nham Kang; Kyung Sik Yoon

doi:10.1143/jjap.30.l535

Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Cited By ~ 2

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Lightly Doped Drain

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A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2011.11.4.278 ◽

2011 ◽

Vol 11 (4) ◽

pp. 278-286 ◽

Cited By ~ 1

Author(s):

Ji-Hyun Kim ◽

Woo-Kyung Sun ◽

Seung-Hye Park ◽

Hye-In Lim ◽

Hyung-Soon Shin

Keyword(s):

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Compact Model ◽

Oxide Semiconductor ◽

Short Channel ◽

Surrounding Gate ◽

Voltage Dependent

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A Simple Model for Substrate Current Characteristics in Short-Channel Ultrathin-Film Metal-Oxide-Semiconductor Field-Effect Transistors by Separation by Implanted Oxygen

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.4722 ◽

1995 ◽

Vol 34 (Part 1, No. 9A) ◽

pp. 4722-4727 ◽

Cited By ~ 6

Author(s):

Yasuhisa Omura

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ultrathin Film ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Substrate Current ◽

Current Characteristics

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Gate voltage dependent 1/fnoise variance model based on physical noise generation mechanisms in n-channel metal–oxide–semiconductor field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.04dc10 ◽

2015 ◽

Vol 54 (4S) ◽

pp. 04DC10

Author(s):

Yukiko Arai ◽

Hitoshi Aoki ◽

Fumitaka Abe ◽

Shunichiro Todoroki ◽

Ramin Khatami ◽

...

Keyword(s):

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Noise Generation ◽

Variance Model ◽

Voltage Dependent ◽

Generation Mechanisms

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A Physics-Based Short-Channel Current-Voltage Model for Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.3448 ◽

1997 ◽

Vol 36 (Part 1, No. 6A) ◽

pp. 3448-3459 ◽

Cited By ~ 5

Author(s):

Man-Chun Hu ◽

Sheng-Lyang Jang ◽

Chwan-Gwo Chyau

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Channel Current ◽

Current Voltage ◽

Lightly Doped Drain

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Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.918 ◽

2004 ◽

Vol 43 (3) ◽

pp. 918-924 ◽

Cited By ~ 1

Author(s):

Kenshi Tada ◽

Toshimasa Matsuoka ◽

Kenji Taniguchi ◽

Kazuhiro Maeda ◽

Tamotsu Sakai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Modeling ◽

Characteristic Extraction ◽

Novel Method ◽

Lightly Doped Drain ◽

Intrinsic Characteristic

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

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Behaviors of gate induced drain leakage stress in lightly doped drain n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3250435 ◽

2009 ◽

Vol 95 (15) ◽

pp. 152107 ◽

Cited By ~ 8

Author(s):

X. H. Ma ◽

Y. R. Cao ◽

H. X. Gao ◽

H. F. Chen ◽

Y. Hao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lightly Doped Drain

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Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal–Oxide–Semiconductor Field-Effect Transistors on SiC Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.014104 ◽

2010 ◽

Vol 49 (1) ◽

pp. 014104

Author(s):

Tsu Chang ◽

Hsuan-ling Kao ◽

S. L. Liu ◽

Joseph D. S. Deng ◽

K. Y. Horng ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Power Performance ◽

Lightly Doped Drain ◽

Frequency Power

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New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074304 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074304 ◽

Cited By ~ 2

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Material

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