Correlations between structure, composition and electrical properties of tungsten/tungsten oxide periodic multilayers sputter deposited by gas pulsing

2017 ◽  
Vol 101 ◽  
pp. 127-137 ◽  
Author(s):  
Valérie Potin ◽  
Arnaud Cacucci ◽  
Nicolas Martin
2020 ◽  
Vol 46 (15) ◽  
pp. 23295-23313 ◽  
Author(s):  
Ahmar Mehmood ◽  
Xueyuan Long ◽  
Azhar Ali Haidry ◽  
Xiaogang Zhang

2007 ◽  
Vol 124-126 ◽  
pp. 343-346 ◽  
Author(s):  
Yong Hee Han ◽  
Seung Hoon Lee ◽  
Kun Tae Kim ◽  
In Hoon Choi ◽  
Sung Moon

In recent years, we have reported uncooled microbolometer with amorphous vanadium-tungsten oxide as a thermometric material. The reported tungsten-doped vanadium oxide showed very high TCR over -3.0%/K compared with common vanadium oxide, which generally has the TCR values near -2.0%/K. In this work, we characterized properties of electrical conductivity of amorphous tungsten-doped vanadium oxide by investigating electronic structure between vanadium oxide and tungsten-doped vanadium oxide. Finally, it is concluded that tungsten addition into vanadium give rise to changes of electronic structure when pure vanadium is oxidized and this changes of electronic structure attribute to electrical properties such as high TCR values of vanadium-tungsten oxide.


2011 ◽  
Vol 23 (33) ◽  
pp. 334206 ◽  
Author(s):  
M Sagmeister ◽  
M Postl ◽  
U Brossmann ◽  
E J W List ◽  
A Klug ◽  
...  

2005 ◽  
Vol 17 (1) ◽  
pp. 217-223 ◽  
Author(s):  
Chao-Hsuing Chen ◽  
Shui-Jinn Wang ◽  
Rong-Ming Ko ◽  
Yi-Cheng Kuo ◽  
Kai-Ming Uang ◽  
...  

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