Growth and electrical properties of sputter‐deposited single‐crystal GaSb films on GaAs substrates

1979 ◽  
Vol 50 (10) ◽  
pp. 6396-6405 ◽  
Author(s):  
A. H. Eltoukhy ◽  
J. E. Greene
Author(s):  
يوسف بيار علي ◽  
سلوان كمال جميل العاني ◽  
بريج موهن ارورا

Single crystal n-GaAs substrates have been implanted at 300 K with 100 MeV 28Si and 120Sn ions to a dose of 1x1018ions/m2 independently. The electrical properties of these samples has been investigated and compared after implantation and annealing up to 850 °C by current voltage (I-V) measurements. It has been observed that the I-V curves for the samples implanted with 28Si ions show p-n junction like characteristics which then show a linear I-V characteristics for the annealing treatment between 150-550 °C. Annealing the samples at 650 °C results in a typical diode like I-V characteristics which become less non-linear after further annealing at 750 °C. Further annealing at 850 °C results in to a back ward diode like behavior. However the I-V curves for the samples implanted with 120Sn ions and annealed up to 450C were linear which then show a weak non linearity for the annealing treatments between 550C-750C. After 850C annealing the samples show a strong nonlinearity typical of a p-n junction. The temperature dependence of resistance of both 28Si and 120Sn implanted GaAs samples after implantation and different annealing steps are investigated and the possible conduction mechanisms are discussed.


Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.


2003 ◽  
Vol 388-389 ◽  
pp. 241-242 ◽  
Author(s):  
Nobuaki Watanabe ◽  
Takahiko Masui ◽  
Yutaka Itoh ◽  
Takato Machi ◽  
Isao Kato ◽  
...  

1998 ◽  
Vol 106 (1229) ◽  
pp. 116-118 ◽  
Author(s):  
Kouichi HARADA ◽  
Senji SHIMANUKI ◽  
Shiroh SAITOH ◽  
Yohachi YAMASHITA

CrystEngComm ◽  
2020 ◽  
Vol 22 (22) ◽  
pp. 3824-3830 ◽  
Author(s):  
Ying Yu ◽  
Jiadong Yao ◽  
Xinyue Niu ◽  
Boran Xing ◽  
Yali Liu ◽  
...  

Single crystal black phosphorus nanoribbons along the zigzag direction have been successfully grown by chemical vapor transport.


Sign in / Sign up

Export Citation Format

Share Document