A simple and effective approach based on the liquid phase exfoliation (LPE) method has been put forward for synthesizing boron quantum dots (BQDs). By adjusting the interactions between bulk boron and various solvents, the average diameter of produced BQDs is about 7 nm. The nonlinear absorption (NLA) responses of as-prepared BQDs have been systematically studied at 515 nm and 1030 nm. Experimental results prove that BQDs possess broadband saturable absorption (SA) and good third-order nonlinear optical susceptibility, which are comparable to graphene. The fast relaxation time and slow relaxation time of BQDs at 515 nm and 1030 nm are about 0.394–5.34 ps and 4.45–115 ps, respectively. The significant ultrafast nonlinear optical properties can be used in optical devices. Here, we successfully demonstrate all-optical diode application based on BQDs/ReS2 tandem structure. The findings are essential for understanding the nonlinear optical properties in BQDs and open a new pathway for their applications in optical devices.
CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth