Investigation of inhomogeneous barrier height for Au/n-type 6H-SiC Schottky diodes in a wide temperature range

2018 ◽  
Vol 124 ◽  
pp. 30-40 ◽  
Author(s):  
Tamer Güzel ◽  
Ahmet Kürşat Bilgili ◽  
Metin Özer
Keyword(s):  
Barrier Height ◽  
Wide Temperature Range ◽  
Schottky Diodes ◽  
Temperature Range

Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

2019 ◽  
Vol 247 ◽  
pp. 114370 ◽  
Author(s):  
V.E. Gora ◽  
F.D. Auret ◽  
H.T. Danga ◽  
S.M Tunhuma ◽  
C. Nyamhere ◽  
...  
Keyword(s):  
Barrier Height ◽  
Wide Temperature Range ◽  
Schottky Diodes ◽  
Temperature Range

scholarly journals Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5909
Author(s):  
Hicham Helal ◽  
Zineb Benamara ◽  
Mouhamed Amine Wederni ◽  
Sabrine Mourad ◽  
Kamel Khirouni ◽  
...  
Keyword(s):  
Barrier Height ◽  
Wide Temperature Range ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Schottky Contacts ◽  
Temperature Range ◽  
Tunnel Mechanism ◽  
Nitridation Process

Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current Iinv increments from 1 × 10−7 A at 80 K to about 1 × 10−5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01 at 420 K. The barrier height qϕb grows abnormally from 0.46 eV at 80 K to 0.83 eV at 420 K. The tunnel mechanism TFE effect is the responsible for the qϕb behavior. The series resistance Rs is very low, decreasing from 13.80 Ω at 80 K to 4.26 Ω at 420 K. These good results are due to the good quality of the interface treated by the nitridation process. However, the disadvantage of the nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.

Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range

2019 ◽  
Vol 48 (5) ◽  
pp. 3169-3182 ◽  
Author(s):  
A. Baltakesmez ◽  
A. Taşer ◽  
Z. Kudaş ◽  
B. Güzeldir ◽  
D. Ekinci ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Graphene Oxide ◽  
Barrier Height ◽  
Wide Temperature Range ◽  
Temperature Range

scholarly journals Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

2016 ◽  
Vol 858 ◽  
pp. 741-744 ◽  
Author(s):  
Besar Asllani ◽  
Maxime Berthou ◽  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Phillippe Godignon
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Wide Temperature Range ◽  
Reverse Bias ◽  
Schottky Contact ◽  
Bias Current ◽  
Strong Impact ◽  
Temperature Range ◽  
Wide Range

This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes at low temperature show that the barrier height depends on temperature but also on voltage.

Fibre-optic temperature sensor with wide temperature range characteristics

1987 ◽  
Vol 134 (5) ◽  
pp. 291 ◽  
Author(s):  
K.T.V. Grattan ◽  
J.D. Manwell ◽  
S.M.L. Sim ◽  
C.A. Willson
Keyword(s):  
Wide Temperature Range ◽  
Temperature Sensor ◽  
Fibre Optic ◽  
Temperature Range
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