Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer

2020 ◽  
Vol 147 ◽  
pp. 106682 ◽  
Author(s):  
Asif Rasool ◽  
R. Amiruddin ◽  
I. Raja Mohamed ◽  
M.C. Santhosh Kumar
Keyword(s):  
Molybdenum Trioxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Fabrication And Characterization ◽  
Switching Layer

Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 88166-88170 ◽  
Author(s):  
Wei-Kang Hsieh ◽  
Ricky W. Chuang ◽  
Shoou-Jinn Chang
Keyword(s):  
Room Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Fabrication And Characterization ◽  
Switching Memory

We report the fabrication and characterization of resistive random access memory (RRAM) with a Ti/MgZnO/Pt structure at room temperature.

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